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8 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC320MS8G
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
v00.0900
General Description
Features
Functional Diagram
The HMC320MS8G is a low cost C-band fi xed
gain Low Noise Amplifi er (LNA). The HMC320MS8G
operates using a single positive supply that can be
set between +3V and +5V. With +3V bias, the LNA
provides a noise fi gure of 2.5dB, 12dB gain and
better than 10dB return loss across the UNII band.
The HMC320MS8G also features adaptive baising
that allows the user to select the optimal P1dB
performance for their system using an external set
resistor on the "RES" pin. P1dB performance can
be set between a range of +1 dBm to +13dBm. The
low cost LNA uses an 8-leaded MSOP ground base
surface mount plastic package, which occupies less
than 14.8mm
2
.
Selectable Functionality:
LNA, Driver, or LO Buffer Amp
Adjustable Input IP3 Up to +10 dBm
+3V Operation
Ultra Small 8 Lead MSOP:
14.8 mm
2
x 1mm High
Electrical Specifi cations,
T
A
= +25° C, Vdd = +3V
Typical Applications
The HMC320MS8G is ideal for:
· UNII
· HiperLAN
* R
BIAS
resistor value sets current. See adaptive biasing application note.
Parameter
Low Power*
(VSET = 0V, Idd = 7 mA)
Medium Power*
(VSET = 3V, Idd = 25 mA)
High Power*
(VSET = 3V, Idd = 40 mA)
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
5 - 6
5 - 6
5 - 6
GHz
Gain
8
10
16
8
12
16
9
13
16
dB
Gain Variation over Temperature
0.025
0.035
0.025
0.035
0.025
0.035
dB/°C
Gain Flatness
±0.5
±1.0
±1.5
dB
Noise Figure
2.7
3.8
2.5
3.8
2.6
3.8
dB
Input Return Loss
4
10
4
10
4
10
dB
Output Return Loss
7
13
10
18
10
20
dB
Output Power for 1 dB Compression (P1dB)
-4
-1
6
9
9
12
dBm
Input Third Order Intercept Point (IIP3)
-3
1
4
8
6
10
dBm
Supply Current (Idd)
7
25
40
mA
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-30
-25
-20
-15
-10
-5
0
5
10
15
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
S11
S21
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
4
4.5
5
5.5
6
6.5
7
Low Power Bias
Medium Power Bias
High Power Bias
GAIN (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
4
4.5
5
5.5
6
6.5
7
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
4
4.5
5
5.5
6
6.5
7
Low Power Bias
Medium Power Bias
High Power Bias
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
4
4.5
5
5.5
6
6.5
7
Low Power Bias
Medium Power Bias
High Power Bias
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
HMC320MS8G
v00.0900
Broadband Gain & Return Loss
Medium Power Bias
Gain vs. Temperature
Medium Power Bias
Input Return Loss
@ Three Bias Conditions
Gain @ Three Bias Conditions
Noise Figure vs. Temperature
Medium Power Bias
Output Return Loss
@ Three Bias Conditions
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC320MS8G
v00.0900
-5
-3
-1
1
3
5
7
9
11
13
15
4.5
5
5.5
6
6.5
Low Power Bias
Medium Power Bias
High Power Bias
INPUT IP3 (dBm)
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
4.5
5
5.5
6
6.5
Low Power Bias
Medium Power Bias
High Power Bias
NOISE FIGURE (dB)
FREQUENCY (GHz)
-5
-3
-1
1
3
5
7
9
11
13
15
4.5
5
5.5
6
6.5
Low Power Bias
Medium Power Bias
High Power Bias
P1dB (dBm)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
4
4.5
5
5.5
6
6.5
7
Low Power Bias
Medium Power Bias
High Power Bias
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Noise Figure
@ Three Bias Conditions
Input IP3 @ Three Bias Conditions
Output 1dB Compression
@ Three Bias Conditions
Reverse Isolation
@ Three Bias Conditions
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
MICROWAVE CORPORATION
8 - 95
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC320MS8G
v00.0900
Adaptive Biasing
Applying the adaptive biasing
A dynamically controlled bias can be implemented with this design. A typical application wil include
sensing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by
either analog or digitals means, after the RF signal has been detected and translated to a DC voltage
using external power detection circuitry.
Optimizing P1dB Performance
The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the
HMC320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET
voltage source to provide 100uA of current to the amplifi er. The Idd and Vdd quiescent performance will not change
as a function of changing the VSET voltage.
RF Performance at 5.8 GHz (Vdd = +3V)
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
Schematic
VSET
(VDC)
RBIAS Resistor
Between Pin 3 and
GND (Ohms)
Idd (mA)
Output
P1dB (dBm)
Output
Return Loss
(dB)
0
174
7
1.0
16.0
3
23
25
9.0
12.0
3
7
40
13.0
15.0
3
GND
(No Resistor)
60
14.0
15.0
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Absolute Maximum Ratings
Outline Drawing
Truth Table
v00.0900
HMC320MS8G
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
Set external bias resistor (R
BIAS
) to achieve
desired operating current, 0 < R
BIAS
< 200 Ohm.
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Drain Bias Voltage (Vdd)
+7.0 Vdc
Control Voltage Range (VSET)
0 to Vdd
RF Input Power (RFin)(Vdd = +3.0 Vdc)
+5 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 2.98 mW/°C above 85 °C)
0.194 W
Thermal Resistance
(channel to ground paddle)
336 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
VSET
Operating
Current Idd
Operating
State
Resistor Rbias
0V
7 mA
Low Power
174 Ohm
3V
25 mA
Medium Power
23 Ohm
3V
40 mA
High Power
7 Ohm
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