MICROWAVE CORPORATION
8 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC313
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
v02.0703
General Description
Features
The HMC313 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC amplifi er that
operates from a single Vcc supply. The surface
mount SOT26 amplifi
er can be used as a
broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313 offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current. The "HMC313 Biasing
and Impedance Matching Techniques" application
note available within the "Application Notes" section
offers recommendations for narrow band operation.
P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Ideal as a Driver & Amplifi er for:
· 2.2 - 2.7 GHz MMDS
· 3.5 GHz Wireless Local Loop
· 5.0 - 6.0 GHz UNII & HiperLAN
Electrical Specifi cations,
T
A
= +25 °C
Parameter
Vcc = +5V
Units
Min.
Typ.
Max.
Frequency Range
DC - 6
GHz
Gain
14
17
20
dB
Gain Variation Over Temperature
0.02
0.03
dB/°C
Input Return Loss
7
dB
Output Return Loss
6
dB
Reverse Isolation
30
dB
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
11
14
dBm
Saturated Output Power (Psat) @ 1.0 GHz
15
dBm
Output Third Order Intercept (IP3) @ 1.0 GHz
24
27
dBm
Noise Figure
6.5
dB
Supply Current (Icc)
50
mA
Functional Diagram
Typical Applications
MICROWAVE CORPORATION
8 - 69
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC313
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
v02.0703
Reverse Isolation
Gain & Return Loss
Gain vs. Temperature
Input & Output Return Loss
Psat vs. Temperature
P1dB vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
25
0
1
2
3
4
5
6
7
S11
S21
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
0
1
2
3
4
5
6
7
+ 25 C
+ 85 C
- 40 C
GAIN
(dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
ISOLATION (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
0
1
2
3
4
5
6
7
+ 25 C
+ 85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
0
1
2
3
4
5
6
7
+ 25 C
+ 85 C
- 40 C
Psat (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC313
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
v02.0703
Output IP3 vs. Temperature
Power Compression @ 1.0 GHz
Power Compression @ 3.0 GHz
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
+ 25 C
+ 85 C
- 40 C
IP3 (dBm)
FREQUENCY (GHz)
-10
-5
0
5
10
15
20
-22 -20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
-10
-5
0
5
10
15
20
-22 -20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC313
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
v02.0703
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
RF Input Power (RFin)(Vcc = +5.0 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 3.99 mW/°C above 85 °C)
0.259 W
Thermal Resistance
(junction to lead)
251 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Absolute Maximum Ratings
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Pin Number
Function
Description
Interface Schematic
1
RFOUT
This pin is DC coupled. An off chip DC blocking capacitor is
required.
3
RFIN
This pin is DC coupled. An off chip DC blocking capacitor is
required.
2, 4-6
GND
These pins must be connected to RF/DC ground.
HMC313
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
v02.0703
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
3. See "Application Notes" section for HMC313 Application Circuit.
Application Circuit
Pin Descriptions
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