2SK3080
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±
20
V
Drain current
I
D
30
A
Drain peak current
I
D(pulse)
Note1
120
A
Body-drain diode reverse drain current I
DR
30
A
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
55 to +150
°
C
Note:
1. PW
10
µ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
±
20
--
--
V
I
G
=
±
100
µ
A, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
µ
A
V
DS
= 30 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
±
10
µ
A
V
GS
=
±
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state
resistance
R
DS(on)
--
20
28
m
I
D
= 15A, V
GS
= 10V
Note3
Static drain to source on state
resistance
R
DS(on)
--
35
50
m
I
D
= 15A, V
GS
= 4V
Note3
Forward transfer admittance
|y
fs
|
12
18
--
S
I
D
= 15A, V
DS
= 10V
Note3
Input capacitance
Ciss
--
750
--
pF
V
DS
= 10V
Output capacitance
Coss
--
520
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
210
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
16
--
ns
V
GS
= 10V, I
D
= 15A
Rise time
t
r
--
260
--
ns
R
L
= 0.67
Turn-off delay time
t
d(off)
--
85
--
ns
Fall time
t
f
--
90
--
ns
Bodydrain diode forward voltage
V
DF
--
1.0
--
V
I
F
= 30A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
45
--
ns
I
F
= 30A, V
GS
= 0
diF/ dt =50A/
µ
s
Note:
3. Pulse test
2SK3080
5
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
10000
2000
5000
1000
100
200
500
50
40
30
20
10
0
20
16
12
8
4
8
16
24
32
40
0
1000
300
30
100
3
10
1
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
V = 5 V
10 V
25 V
DD
I = 30 A
D
V
GS
V
DS
V = 25 V
10 V
5 V
DD
1000
300
30
100
3
10
1
0.1
0.3
1
3
10
30
100
V = 10 V, V = 10 V
PW = 5 µs, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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