GENERAL
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Base
Suitable Socket
nm
nm
--
mm dia.
--
--
--
--
--
115 to 200
140
Cs-I
14
MgF
2
Linear focused
10
12 pin base JEDEC No. B12-43
E678-12A
Material
Minimum Useful Size
Structure
Number of Stages
PHOTOMULTIPLIER TUBE
R972
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage: 2000 V dc, K: Cathode, Dy: Dynode, P: Anode
For VUV Detection, 19 mm (3/4 Inch) Diameter,
10-stage,
Head-On Type, Solar Blind Response (115 nm to 200nm)
CHARACTERISTICS (at 25
°
C)
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Parameter
Min.
Unit
Parameter
Value
Unit
Supply Voltage
Average Anode Current
Ambient Temperature
2250
250
0.01
-80 to +50
V dc
V dc
mA
°
C
Between Anode and Cathode
Between Anode and Last Dynode
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30 min. storage in darkness)
Time Response
Electrodes
Ratio
K
Dy1
1.5
Dy2
1
Dy3
1
Dy4
1
Dy5
1
Dy6
1
Dy7
1
Dy8
1
Dy9
1
1
1
Dy10
P
Radiant at 122 nm
Quantum Efficiency at 130 nm
Radiant at 122 nm
Anode Pulse Rise Time
Electron Transit Time
--
--
2.0
×
10
2
--
--
--
--
12
1.3
1.2
×
10
3
1.0
×
10
5
0.03
1.6
17
mA/W
%
A/W
--
nA
ns
ns
--
--
--
--
0.05
--
--
Typ.
Max.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
PHOTOMULTIPLIER TUBE R972
Figure 1: Typical Spectral Response
TPMH1211E02
NOV. 2000 IP
TPMHB0613EA
Figure 2: Typical Gain Characteristics
TPMHB0514EA
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
TPMHA0208EA
TACCA0009EB
Socket (Option)
(E678-12A)
500
700
1000
1500
2000
3000
10
1
10
3
10
4
10
6
10
0
SUPPLY VOLTAGE (V)
GAIN
10
2
10
5
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
HOMEPAGE URL http://www.hamamatsu.com
DY1
DY3
DY5
DY7
DY9
P
1
2
3
4
5
6
7
8
9
10
11
12
DY10
DY8
DY6
DY4
DY2
K
DY3
DY5
DY7
DY9
DY10
P
DY4
DY2
K
DY1
1
2
3
4
5
6
9
10
11
12
7
8
DY8
DY6
B
Bottom View
A
Temporary Base Removed
19 ± 1
13 MIN.
FACEPLATE
PHOTOCATHODE
SEMI-FLEXIBLE
LEADS
13 MAX.
88 ± 2
45 MIN.
12 PIN BASE
JEDEC
No. B12-43
37.3 ± 0.5
A
B
40
47
5
8
15
17
2- 3.2
34
80
100
120
140
160
180
200
220
WAVELENGTH (nm)
0.01
0.1
1
10
100
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
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