MMBT3904
Small Signal Transistors (NPN)
FEATURES
¨ NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
¨ As complementary type, the PNP
transistor MMBT3906 is recommended.
¨ This transistor is also available in the TO-92
case with the type designation 2N3904.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: 1AM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current
I
C
200
mA
Power Dissipation at T
A
= 25 ¡C
P
tot
225
(1)
mW
300
(2)
Thermal Resistance Junction to Substrate Backside
R
qSB
320
(1)
¡C/W
Thermal Resistance Junction to Ambient Air
R
qJA
450
(1)
¡C/W
Junction Temperature
T
j
150
¡C
Storage Temperature Range
T
S
Ð65 to +150
¡C
NOTES:
(1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
ma
x
.
.004
(
0.1
)
.122 (3.1)
.016 (0.4)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (
0
.17
5)
.0
45 (
1
.15)
.118 (3.0)
.052 (
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37 (
0
.95)
SOT-23
1/5/99
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 10
mA, I
E
= 0
V
(BR)CBO
60
Ð
V
Collector-Emitter Breakdown Voltage
at I
C
= 1 mA, I
B
= 0
V
(BR)CEO
40
Ð
V
Emitter-Base Breakdown Voltage
at I
E
= 10
mA, I
C
= 0
V
(BR)EBO
6.0
Ð
V
Collector Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
V
CEsat
Ð
0.2
V
at I
C
= 50 mA, I
B
= 5 mA
V
CEsat
Ð
0.3
V
Base Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
V
BEsat
Ð
0.85
V
at I
C
= 50 mA, I
B
= 5 mA
V
BEsat
Ð
0.95
V
Collector-Emitter Cutoff Current
V
EB
= 3 V, V
CE
= 30 V
I
CEV
Ð
50
nA
Emitter-Base Cutoff Current
V
EB
= 3 V, V
CE
= 30 V
I
EBV
Ð
50
nA
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
h
FE
40
Ð
Ð
at V
CE
= 1 V, I
C
= 1 mA
h
FE
70
Ð
Ð
at V
CE
= 1 V, I
C
= 10 mA
h
FE
100
300
Ð
at V
CE
= 1 V, I
C
= 50 mA
h
FE
60
Ð
Ð
at V
CE
= 1 V, I
C
= 100 mA
h
FE
30
Ð
Ð
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
ie
1
10
k
W
Gain-Bandwidth Product
at V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
f
T
300
Ð
MHz
Collector-Base Capacitance
at V
CB
= 5 V, f = 100 kHz
C
CBO
Ð
4
pF
Emitter-Base Capacitance
at V
EB
= 0.5 V, f = 100 kHz
C
EBO
Ð
8
pF
MMBT3904
MMBT3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Voltage Feedback Ratio
V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
re
0.5 . 10
Ð4
8 . 10
Ð4
Ð
Small Signal Current Gain
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
fe
100
400
Ð
Output Admittance
at V
CE
= 1 V, I
C
= 1 mA, f = 1 kHz
h
oe
1
40
mS
Noise Figure
at V
CE
= 5 V, I
C
= 100
mA, R
G
= 1 k
W,
f = 10 É 15000 Hz
NF
Ð
5
dB
Delay Time (see Fig. 1)
at I
B1
= 1 mA, I
C
= 10 mA
t
d
Ð
35
ns
Rise Time (see Fig. 1)
at I
B1
= 1 mA, I
C
= 10 mA
t
r
Ð
35
ns
Storage Time (see Fig. 2)
at ÐI
B1
= I
B2
= 1 mA, I
C
= 10 mA
t
s
Ð
200
ns
Fall Time (see Fig. 2)
at ÐI
B1
= I
B2
= 1 mA, I
C
= 10 mA
t
f
Ð
50
ns
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
0.47 (12)
Dimensions in inches and (millimeters)
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