ESJA09-10
(10kV/5mA)
HIGH VOLTAGE DIODE
Features
High speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
Applications
Rectification for CRT display monitor high voltage
power supply (FBT:Flyback Transformer)
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Symbols
V
RRM
I
O
I
FSM
T
j
Tc
Condition
10mS Sine-half wave
peak value
Ta=25°C,Resistive Load
ESJA09-10
10
5
0.5
120
100
-40 to +120
Units
kV
mA
A
peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
V
F
IR
1
IR
2
Conditions
at 25°C,I
F
=10mA
at 25°C,V
R
=10kV
at 100°C,V
R
=10kV
ESJA09-10
35
2
5
Units
V
µA
µA
Maximum Reverse Recovery Time trr at 25°C,I
F
=2mA,I
R
=4mA 0.05 µs
Junction Capacitance Cj at 25°C,V
R
=0V,f=1MHz 1 pF
Storage Temperature T
stg
ESJA09 is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings
ESJA09-10
Cathode Mark
Type Mark
White
57
27 min.
27 min.
10
o 2.5
o 0.5
Cathode Mark
Lot No.
ESJA09-10
(10kV/5mA)
Characteristics
5
10
15
20
25
30
10
15
20
25
30
35
40
45
50
Forward characteristic (VF-IF)
Ta=25°C
Typical
VF (V)
IF (mA)
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
Reverse characteristic (VR-IR)
IR (
µ
A)
Typical
Toil=100°C
VR (kV)
1
10
100
10
11
12
13
14
15
16
17
18
19
20
Avalanche characteristic (Vz-Iz)
Iz (
µ
A)
Ta=25°C
Typical
Vz (kV)
50
60
70
80
90
100
110
120
130
30
40
50
60
70
80
90
100
110
120
130
IF/IR=2/4mA
75%Recovery
Reverse recovery time characteristic (Ta-trr)
trr (ns)
Typical
Ta (°C)
PDF 
ZIP