TN3440A
TN3440A
NPN General Purpose Amplifier
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
This device is designed for use in horizontal driver, class A off-line
amplifier and off-line switching applications. Sourced from Process 36.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
250
V
V
CBO
Collector-Base Voltage
300
V
V
EBO
Emitter-Base Voltage
7.0
V
I
C
Collector Current - Continuous
100
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
TN3440A
P
D
Total Device Dissipation
Derate above 25
°
C
1.0
8.0
W
mW/
°
C
R
JC
Thermal Resistance, Junction to Case
125
°
C/W
R
JA
Thermal Resistance, Junction to Ambient
50
°
C/W
TO-226
C
B
E
Discrete POWER & Signal
Technologies
©
1997 Fairchild Semiconductor Corporation
TN3440A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
CEO(
sus
)
Collector-Emitter Sustaining Voltage*
I
C
= 50 mA, I
B
= 0
250
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
300
V
I
CEO
Collector-Cutoff Current
V
CE
= 200 V, I
B
= 0
50
µ
A
I
CEX
Collector-Cutoff Current
V
CE
= 300 V, V
BE
= 1.5 V
500
µ
A
I
CBO
Collector-Cutoff Current
V
CB
= 250 V, I
E
= 0
20
µ
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
20
µ
A
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 10 V,
f = 5.0 MHz
15
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
10
pF
C
ibo
Input Capacitance
V
BE
= 5.0 V, I
C
= 0, f = 1.0 MHz
95
pF
h
fe
Small-Signal Current Gain
I
C
= 5.0 mA, V
CE
= 10 V,
f = 1.0 kHz
25
DC Typical Characteristics
*
Pulse Test: Pulse Width
300
µ
s, Duty Cycle
1.0%
Collector-Emitter Saturation
Voltage vs Collector Current
P 36
1
10
100
1000
0.1
0.2
0.3
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
CE
S
A
T
- 40 ºC
25 °C
C
= 10
125 °C
Typical Pulsed Current Gain
vs Collector Current
P 36
0.001
0.01
0.1
1
1
10
100
1000
I - COLLECTOR CURRENT (A)
h
-
TY
P
I
C
A
L P
U
LS
E
D
C
U
R
R
E
N
T
G
A
I
N
FE
- 40 ºC
25 °C
C
V = 5V
CE
125 °C
h
FE
DC Current Gain
I
C
= 2.0 mA, V
CE
= 10 V
I
C
= 20 mA, V
CE
= 10 V
30
40
160
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 4.0 mA
0.5
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 4.0 mA
1.3
V
TN3440A
DC Typical Characteristics
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
Pr36
1
10
100
1000
0
200
400
600
800
1000
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
IT
T
E
R
VO
L
T
A
G
E
(
m
V)
B
E
SA
T
C
= 10
- 40 ºC
25 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
P 36
1
10
100
1000
0
200
400
600
800
1000
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
I
T
T
E
R
O
N
VO
L
T
A
G
E
(
m
V)
B
E(O
N
)
C
V = 5V
CE
- 40 ºC
25 °C
125 °C
AC Typical Characteristics
Contours of Constant Gain
Bandwidth Product (f
T
)
Collector-Base / Emitter-Base
Capacitance vs. Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
P 36
25
50
75
100
125
150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
- CO
L
L
E
CT
O
R
C
U
R
R
E
N
T
(
n
A)
A
V = 225V
CB
º
CBO
NPN General Purpose Amplifier
(continued)
TN3440A
NPN General Purpose Amplifier
(continued)
AC Typical Characteristics
(continued)
TO-226
POWER DISSIPATION vs
AMBIENT TEMPERATURE
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R
DI
S
S
I
P
A
T
I
O
N
(W
)
D
o
Safe Operating Area TO-226
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