PACKAGE DIMENSIONS
SCHEMATIC
12/9/02
Page 1 of 5
© 2002 Fairchild Semiconductor Corporation
REFLECTIVE OBJECT SENSOR
QRE1113.GR
FEATURES
·
Phototransistor output
·
Tape and reel packaging
·
No contact surface sensing
·
Miniature package
·
Lead form style: Gull Wing
0.114 (2.90)
0.099 (2.50)
0.130 (3.30)
0.122 (3.10)
0.079 (2.0)
0.063 (1.60)
0.024 (0.60)
0.016 (0.40)
0.063 (1.60)
0.055 (1.40)
0.193 (4.90)
0.177 (4.50)
0.043 (1.10)
0.035 (0.90)
1
2
4
3
PIN 1 ANODE PIN 3 COLLECTOR
PIN 2 CATHODE
PIN 4 EMITTER
0.024 (0.61)
NOM (4X)
30°
1
2
3
4
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
12/9/02
Page 2 of 5
© 2002 Fairchild Semiconductor Corporation
REFLECTIVE OBJECT SENSOR
QRE1113.GR
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) from housing.
5. Pulse conditions: tp = 100 µs; T = 10 ms.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Rating
Units
Operating Temperature
T
OPR
-25 to +85
°C
Storage Temperature
T
STG
-30 to +100
°C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°C
EMITTER
Continuous Forward Current
I
F
50
mA
Reverse Voltage
V
R
5
V
Peak Forward Current
(5)
I
FP
1
mA
Power Dissipation
(1)
P
D
75
mW
SENSOR
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Collector Voltage
V
ECO
5
V
Collector Current
I
C
20
mA
Power Dissipation
(1)
P
D
50
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNITS
INPUT DIODE
Forward Voltage
I
F
= 20 mA
V
F
--
1.2
1.6
V
Reverse Leakage Current
V
R
= 5 V
I
R
--
--
10
µA
Peak Emission Wavelength
I
F
= 20 mA
PE
--
940
--
nm
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
V
CE
= 20 V, I
F
= 0 mA
I
D
--
--
100
nA
COUPLED
On-State Collector Current
I
F
= 20 mA, V
CE
= 5 V
I
C(ON)
0.15
0.40
--
mA
Saturation Voltage
V
CE (SAT)
--
--
0.3
V
Rise Time
V
CC
= 5 V, I
C(ON)
= 100 µA,
R
L
= 1K
t
r
--
20
--
µs
Fall Time
t
f
--
20
--
12/9/02
Page 3 of 5
© 2002 Fairchild Semiconductor Corporation
REFLECTIVE OBJECT SENSOR
QRE1113.GR
TYPICAL PERFORMANCE CURVES
Fig. 1 Normalized Collector Current vs. Distance
between device and reflector
d-DISTANCE (mm)
0
1
2
3
4
5
I
C (ON)
- NORMALIZED COLLECT
OR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
I
F
= 10 mA
V
CE
= 5 V
T
A
= 25°C
Mirror
Sensing Object:
White Paper (90% reflective)
0
d
Fig. 2 Collector Current vs. Forward Current
I
F
- FORWARD CURRENT (mA)
0
4
8
12
16
20
I
C (ON)
-
COLLECT
OR CURRENT
(mA)
0.0
0.2
0.4
0.6
0.8
1.0
Fig. 3 Collector Current vs. Collector to Emitter Voltage
V
CE
- COLLECTOR EMITTER VOLTAGE (V)
0.1
1
10
I
C (ON)
- COLLECT
OR CURRENT (mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
F
= 25mA
I
F
=20mA
I
F
=10mA
I
F
=15mA
I
F
=5mA
d = 1 mm, 90% reflection
T
A
= 25°C
Fig. 4 Collector Emitter Dark Current (Normalized)
vs. Ambient Temperature
T
A
- Ambient Temperature (°C)
I
CEO
- NORMALIZED D
ARK CURRENT
25
40
55
70
85
10
-2
10
-1
10
0
10
1
10
2
Normalized to:
V
CE
= 10 V
T
A
= 25°C
V
CE
= 10 V
V
CE
= 5 V
12/9/02
Page 4 of 5
© 2002 Fairchild Semiconductor Corporation
REFLECTIVE OBJECT SENSOR
QRE1113.GR
Fig. 5 Forward Current vs. Forward Voltage
V
F
- FORWARD VOLTAGE (V)
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
I
F
- FOR
W
ARD CURRENT (mA)
1.0
1.1
1.2
1.3
1.4
1.5
0
10
20
30
40
50
T
A
= 25°C
Fig. 6 Rise and Fall Time vs. Load Resistance
R
L
- LOAD RESISTANCE (K
)
0.1
1
10
RISE AND F
ALL
TIME (us)
1
10
100
V
CC
= 10 V
t
pw
= 100 us
T=1ms
T
A
= 25°C
I
C
= 0.3 mA
I
C
= 1 mA
t
f
t
f
t
r
t
r
Fig. 7
Forward Voltage vs. Ambient Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
F
= 50 mA
I
F
= 10 mA
I
F
= 20 mA
T
A
- AMBIENT TEMPERATURE (°C)
-40
-20
0
20
40
60
80
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
12/9/02
Page 5 of 5
© 2002 Fairchild Semiconductor Corporation
REFLECTIVE OBJECT SENSOR
QRE1113.GR
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