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Part Number ISL9K460P3

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©2003 Fairchild Semiconductor Corporation
July 2003
I
S
L9K460P
3
ISL9K460P3 Rev. B2
ISL9K460P3
4A, 600V StealthTM Dual Diode
General Description
The ISL9K460P3 is a StealthTM dual diode optimized
for low loss performance in high frequency hard
switched applications. The StealthTM family exhibits low
reverse recovery current (I
RRM
) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
StealthTM diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49408.
Features
· Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 3
· Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 20ns
· Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
o
C
· Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
· Avalanche Energy Rated
Applications
· Switch Mode Power Supplies
· Hard Switched PFC Boost Diode
· UPS Free Wheeling Diode
· Motor Drive FWD
· SMPS FWD
· Snubber Diode
Device Maximum Ratings
(per leg)
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
RRM
Peak Repetitive Reverse Voltage
600
V
V
RWM
Working Peak Reverse Voltage
600
V
V
R
DC Blocking Voltage
600
V
I
F(AV)
Average Rectified Forward Current (T
C
= 155°C)
4
A
Total Device Current (Both Legs)
8
A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave)
8
A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
50
A
P
D
Power Dissipation
58
W
E
AVL
Avalanche Energy (0.5A, 80mH)
10
mJ
T
J
, T
STG
Operating and Storage Temperature Range
-55 to 175
°C
T
L
T
PKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
2
JEDEC TO-220AB
CATHODE
(FLANGE)
CATHODE
ANODE 2
A
1
ANODE 1
Package
Symbol
background image
©2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
I
S
L9K460P
3
Package Marking and Ordering Information
Electrical Characteristics
(per leg)
T
C
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Tape Width
Quantity
K460P3
ISL9K460P3
TO-220AC
N/A
50
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
R
Instantaneous Reverse Current
V
R
= 600V
T
C
= 25°C
-
-
100
µ
A
T
C
= 125°C
-
-
1.0
mA
V
F
Instantaneous Forward Voltage
I
F
= 4A
T
C
= 25°C
-
2.0
2.4
V
T
C
= 125°C
-
1.6
2.0
V
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
19
-
pF
t
rr
Reverse Recovery Time
I
F
= 1A, d
IF
/dt = 100A/
µ
s, V
R
= 30V
-
17
20
ns
I
F
= 4A, d
IF
/dt = 100A/
µ
s, V
R
= 30V
-
19
22
ns
t
rr
Reverse Recovery Time
I
F
= 4A,
d
IF
/dt = 200A/
µ
s,
V
R
= 390V, T
C
= 25°C
-
17
-
ns
I
RRM
Maximum Reverse Recovery Current
-
2.6
-
A
Q
RR
Reverse Recovery Charge
-
22
-
nC
t
rr
Reverse Recovery Time
I
F
= 4A,
d
IF
/dt = 200A/
µ
s,
V
R
= 390V,
T
C
= 125°C
-
77
-
ns
S
Softness Factor (t
b
/t
a
)
-
4.2
-
I
RRM
Maximum Reverse Recovery Current
-
2.8
-
A
Q
RR
Reverse Recovery Charge
-
100
-
nC
t
rr
Reverse Recovery Time
I
F
= 4A,
d
IF
/dt = 400A/
µ
s,
V
R
= 390V,
T
C
= 125°C
-
54
-
ns
S
Softness Factor (t
b
/t
a
)
-
3.5
-
I
RRM
Maximum Reverse Recovery Current
-
4.3
-
A
Q
RR
Reverse Recovery Charge
110
-
nC
dI
M
/dt
Maximum di/dt during t
b
-
500
-
A/µs
R
JC
Thermal Resistance Junction to Case
-
-
2.6
°C/W
R
JA
Thermal Resistance Junction to Ambient TO-220
-
-
62
°C/W
background image
©2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
I
S
L9K460P
3
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
V
F
, FORWARD VOLTAGE (V)
I
F
, F
O
R
W
ARD CURRE
NT
(
A
)
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
7
8
3
25
o
C
175
o
C
100
o
C
150
o
C
V
R
, REVERSE VOLTAGE (V)
I
R
, REV
E
RSE
CURRENT
(
µ
A)
100
10
1
100
200
300
500
600
400
0.1
600
25
o
C
175
o
C
150
o
C
125
o
C
100
o
C
75
o
C
I
F
, FORWARD CURRENT (A)
0
20
30
40
50
70
5
8
t
,
RECO
V
E
R
Y
T
I
M
E
S
(
n
s
)
80
90
1
2
3
4
6
7
t
b
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
t
a
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
60
10
V
R
= 390V, T
J
= 125
o
C
dI
F
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
100
0
20
40
60
80
700
1000
t
,
RECO
V
E
R
Y
T
I
M
E
S
(
n
s
)
200
300
400
500
600
800
900
100
120
t
b
AT I
F
= 8A, 4A, 2A
t
a
AT I
F
= 8A, 4A, 2A
V
R
= 390V, T
J
= 125
o
C
I
F
, FORWARD CURRENT (A)
1
2
3
4
5
6
7
8
I
RR
M
,
M
A
X RE
VER
SE RE
CO
VE
R
Y

C
URRENT
(
A
)
dI
F
/dt = 800A/µs
dI
F
/dt = 500A/µs
dI
F
/dt = 200A/µs
2
3
4
5
6
7
8
V
R
= 390V, T
J
= 125
o
C
dI
F
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
100
1
2
3
4
5
6
700
1000
I
RR
M
,
M
A
X RE
VER
SE RE
CO
VE
R
Y

C
URRENT
(
A
)
V
R
= 390V, T
J
= 125
o
C
I
F
= 8A
I
F
= 2A
7
8
200
300
400
500
600
800
900
I
F
= 4A
background image
©2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
I
S
L9K460P
3
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
Figure 8. Reverse Recovery Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves
(Continued)
dI
F
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
100
1
2
3
4
5
6
700
1000
V
R
= 390V, T
J
= 125
o
C
I
F
= 4A
I
F
= 8A
I
F
= 2A
S
,
RE
VER
SE RE
CO
VE
R
Y

S
O
FT
NESS
F
A
CT
O
R
200
300
400
500
600
800
900
dI
F
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
60
80
100
120
140
160
180
Q
RR
, REVE
RSE RE
CO
V
E
R
Y
CHARGE (
n
C)
100
700
1000
200
300
400
500
600
800
900
V
R
= 390V, T
J
= 125
o
C
I
F
= 8A
I
F
= 4A
I
F
= 2A
V
R
, REVERSE VOLTAGE (V)
C
J
, J
UNC
T
ION CAP
A
C
IT
AN
CE (
p
F
)
0
200
400
600
800
1000
1600
100
1.0
0.03
0.1
10
1200
1400
1800
T
C
, CASE TEMPERATURE (
O
C)
I
F(
A
V
)
, A
VER
A
G
E F
O
R
W
ARD CURRE
NT
(
A
)
150
155
160
170
175
165
0
1
2
3
4
5
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
q
JA
, NO
R
M
A
L
IZ
E
D
T
H
ER
MA
L
I
M
PED
A
N
C
E
0.01
10
-4
10
-3
SINGLE PULSE
10
0
0.1
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
1.0
background image
©2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
I
S
L9K460P
3
Test Circuit and Waveforms
Figure 12. It
rr
Test Circuit
Figure 13. t
rr
Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
R
G
L
V
DD
MOSFET
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 0.5A
L = 80mH
V
DD
= 200V
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
background image
Rev. I3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
®
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
ImpliedDisconnect
TM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSX
TM
MSXPro
TM
OCX
TM
OCXPro
TM
OPTOLOGIC
®
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
®
QFET
®
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigure
TM
RapidConnect
TM
SILENT SWITCHER
®
SMART STARTTM
SPMTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
®
TruTranslationTM
UHCTM
UltraFET
®
VCXTM
Across the board. Around the world.
TM
The Power FranchiseTM
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
®
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
ImpliedDisconnect
TM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSX
TM
MSXPro
TM
OCX
TM
OCXPro
TM
OPTOLOGIC
®
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
®
QFET
®
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigure
TM
RapidConnect
TM
SILENT SWITCHER
®
SMART STARTTM
SPMTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
®
TruTranslationTM
UHCTM
UltraFET
®
VCXTM
Across the board. Around the world.
TM
The Power FranchiseTM
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.