PACKAGE

4/24/03

Page 1 of 9

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

H11AA814 SERIES

H11A617 SERIES

H11A817 SERIES

H11AA814 SCHEMATIC

H11A617 & H11A817 SCHEMATIC

DESCRIPTION

The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.

The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FEATURES

Compact 4-pin package

Current transfer ratio in selected groups:
H11AA814:

20-300%

H11A817:

50-600%

H11AA814A: 50-150%

H11A817A: 80-160%

H11A617A:

40%-80%

H11A817B: 130-260%

H11A617B:

63%-125%

H11A817C: 200-400%

H11A617C: 100%-200%

H11A817D: 300-600%

H11A617D:

160%-320%

Minimum BV

CEO

of 70V guaranteed

APPLICATIONS

H11AA814 Series
·

AC line monitor

Unknown polarity DC sensor

Telephone line interface

H11A617 and H11A817 Series
·

Power supply regulators

Digital logic inputs

Microprocessor inputs

3 EMITTER

COLLECTOR

3 EMITTER

COLLECTOR

ANODE

CATHODE

4/24/03

Page 2 of 9

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

H11AA814 SERIES

H11A617 SERIES

H11A817 SERIES

*Typical values at T

= 25°C.

Parameter

Symbol

Device

Value

Units

TOTAL DEVICE

Storage Temperature

STG

All

-55 to +150

°C

Operating Temperature

OPR

All

-55 to +100

°C

Lead Solder Temperature

SOL

All

260 for 10 sec

°C

Total Device Power Dissipation (-55°C to 50 °C)

All

200

EMITTER

Continuous Forward Current

All

Reverse Voltage

H11A617A/B/C/D

H11A817/A/B/C/D

6
5

Forward Current - Peak (1 µs pulse, 300 pps)

(pk)

All

1.0

LED Power Dissipation (25°C ambient)
Derate above 25°C

All

100

1.33

mW/°C

DETECTOR

Collector-Emitter Voltage

CEO

All

Emitter-Collector Voltage

ECO

H11AA814/A

H11A617A/B/C/D

H11A817/A/B/C/D

6
7
6

Continuous Collector Current

All

Detector Power Dissipation (25°C ambient)
Derate above 25°C

All

150

2.0

mW/°C

ELECTRICAL CHARACTERISTICS

= 25°C Unless otherwise specified.)

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter

Test Conditions Symbol

Device

Min

Typ*

Max

Unit

EMITTER

= 60 mA)

H11A617A/B/C/D

1.35

1.65

Input Forward Voltage

= 20 mA)

H11A817/A/B/C/D

1.2

1.5

= ±20 mA)

H11AA814/A

1.2

1.5

Reverse Leakage Current

= 6.0 V)

H11A617A/B/C/D

.001

µA

= 5.0 V)

H11A817/A/B/C/D

DETECTOR

Collector-Emitter Breakdown
Voltage

= 1.0 mA, I

= 0)

CEO

ALL

100

Emitter-Collector Breakdown
Voltage

= 100 µA, I

= 0)

ECO

H11AA814/A

H11A617A/B/C/D

H11A817/A/B/C/D

Collector-Emitter Dark Current

= 10V, I

= 0)

CEO

H11AA814/A, H11A817/A/B/C/D,

H11A617C/D

100

H11A617A/B

Collector-Emitter Capacitance

= 0 V, f = 1 MHz)

ALL

4/24/03

Page 3 of 9

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

H11AA814 SERIES

H11A617 SERIES

H11A817 SERIES

*Typical values at T

= 25°C.

NOTES

1. Current Transfer Ratio (CTR) = I

x 100%.

2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

TRANSFER CHARACTERISTICS

= 25°C Unless otherwise specified.)

DC Characteristic

Test Conditions

Symbol

Device

Min

Typ*

Max

Unit

Current Transfer
Ratio

= ±1 mA, V

= 5 V) (note 1)

CTR

H11AA814

300

= ±1 mA, V

= 5 V) (note 1)

H11AA814A

150

= 10 mA, V

= 5 V) (note 1)

H11A617A

H11A617B

125

H11A617C

100

200

H11A617D

160

320

= 5 mA, V

= 5 V) (note 1)

H11A817

600

H11A817A

160

H11A817B

130

260

H11A817C

200

400

H11A817D

300

600

= 1 mA, V

= 5 V) (note 1)

H11A617A

H11A617B

H11A617C

H11A617D

Collector-Emitter
Saturation Voltage

= 1 mA, I

= ±20 mA)

= 2.5 mA, I

= 10 mA)

= 1 mA, I

= 20 mA)

CE (SAT)

H11AA814/A

0.2

H11A617A/B/C/D

0.4

H11A817/A/B/C/D

0.2

AC Characteristic

Rise Time

= 2 mA, V

= 2 V, R

= 100V) (note 2)

ALL

2.4

µs

Fall Time

= 2 mA, V

= 2 V, R

= 100V) (note 2)

ALL

2.4

µs

ISOLATION CHARACTERISTICS

Characteristic

Test Conditions

Symbol

Min

Typ*

Max

Units

Input-Output Isolation Voltage (note 3)

f = 60Hz, t = 1 min

ISO

5300

Vac(rms)

Isolation Resistance

I-O

= 500 VDC)

ISO

Isolation Capacitance

I-O

= 0, f = 1 MHz)

ISO

0.5

4/24/03

Page 4 of 9

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

H11AA814 SERIES

H11A617 SERIES

H11A817 SERIES

0.2

0.4

0.6

0.8

1.2

1.4

-50

-25

0.1

0.2

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.0

2.0

100

.02

.04

.06

.08

.12

.14

100

125

- FORWARD CURRENT (mA)

CTR NORMALIZED @ I

= 5 mA,

= 5

,

T

= 25°C

CE (SA

- COLLECT

OR-EMITTER

TURA

TION V

L
T

(V)

- FOR

ARD

L
T

GE (V)

NORMALIZED CTR

CTR NORMALIZED @ I

= 5 mA,

= 5

,

T

= 25°C

NORMALIZED CTR

-50

0.4

0.6

0.8

1.2

-25

+25

+50

+75

- AMBIENT TEMPERATURE (°C)

- FORWARD CURRENT (mA)

+100

Fig. 1 Normalized CTR vs. Forward Current

Fig. 3 Collector-Emitter Saturation Voltage

vs. Ambient Temperature

Fig. 2 Normalized CTR vs. Ambient Temperature

Fig. 4 Forward Voltage vs. Forward Current

= 20 mA

= 1 mA

= 10 mA

= 5 mA

T = -55°C

T = 25°C

T = 100°C

- COLLECTOR-EMITTER VOLTAGE (V)

Fig. 5 Collector Current

vs. Collector-Emitter Voltage

= 5 mA

= 1 mA

= 10 mA

= 20 mA

C -

COLLECT

OR CURRENT (mA)

4/24/03

Page 5 of 9

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

H11AA814 SERIES

H11A617 SERIES

H11A817 SERIES

-6

-5

-4

-3

-2

-1

100

125

CEO -

COLLECT

OR-EMITTER CURRENT (

- AMBIENT TEMPERATURE (°C)

Fig. 6 Collector Leakage Current

vs. Ambient Temperature

= 10 V

0.1

100

1000

100

R - LOAD RESISTOR (KV)

Fig. 7 Rise and Fall Time

vs. Load Resistor

off

RISE AND F

ALL

TIME (

= 5 mA

= 5 V

= 25°C

OUTPUT PULSE

INPUT PULSE

TEST CIRCUIT

WAVE FORMS

INPUT

= 100

= 10V

OUTPUT

Temperature (

°C)

250

200

150

100

Time (Min)

220

°C: 10 sec to 40 sec

Time > 183

°C: 120 sec to 180 sec

225

°C

10%

90%

Figure 8. Switching Time Test Circuit and Waveforms

Recommended Thermal Reflow Profile for Surface Mount DIP Package

Adjust I

to produce I

= 2 mA

Part Number H11A817A