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©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC183LC
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
45
V
V
CEO
Collector-Emitter Voltage
30
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
100
mA
P
C
Collector Dissipation (T
a
=25
°
C)
350
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Voltage
I
C
= 10
µ
A
45
V
BV
CEO
Collector-Emitter Voltage
I
C
= 2mA
30
V
BV
EBO
Emitter-Base Voltage
I
E
= 10
µ
A
5
V
I
CBO
Collector Cut-off Current
V
CB
= 30V
15
nA
I
EBO
Emitter Cut-off Current
V
EB
= 3V
15
nA
h
FE
DC Current Gain
V
CE
= 5V, I
C
= 10
µ
A
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 100mA
40
100
80
850
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
0.25
0.6
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 100mA, I
B
= 5mA
1.2
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= 5V, I
C
= 2mA
0.55
0.7
V
C
OB
Output Capacitance
V
CE
= 10V, f = 1MHz
5
pF
f
T
Current gain Bandwidth Product
V
CE
= 5V, I
C
= 10mA
150
MHz
h
fe
Small Signal Current Gain
V
CE
= 5V, I
C
= 2mA
f = 1KHz
450
900
NF
Noise Figure
V
CE
= 5V, I
C
= 200mA
R
G
= 2K
, f = 1KHz
10
dB
BC183LC
NPN General purpose Amplifier.
1. Emitter 2. Collector 3. Base
TO-92
1
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC183LC
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Curent
Figure 4. Base-Emitter ON Voltage
vs Collector Current
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Bias Voltage
0.01
0.03
0.1
0.3
1
3
10
30
100
0
200
400
600
800
1000
1200
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L PUL
SED C
U
R
R
E
N
T
G
A
I
N
C
FE
125 °C
25 °C
- 40 °C
V
CE
= 5.0V
0.1
1
10
100
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TT
ER
V
O
L
T
A
G
E
(
V
)
C
CE
SA
T
25 °C
- 40 °C
125 °C
= 10
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TT
E
R
VO
L
T
A
G
E
(
V
)
C
B
ES
A
T
= 10
25 °C
- 40 °C
125
°
°
°
°
C
0.1
1
10
40
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
MI
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
B
EO
N
V = 5.0 V
CE
25 °C
- 40 °C
125
°
°
°
°
C
25
50
75
100
125
150
0.1
1
10
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
CU
RR
E
N
T
(
n
A)
A
CBO
V = 45V
°
CB
0
4
8
12
16
20
0
1
2
3
4
5
REVERSE BIAS VOLTAGE (V)
CAP
AC
I
T
AN
CE (
p
F
)
f = 1.0 MHz
C ob
C
µ
µ
µ
µ
µ
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC183LC
Typical Characteristics
(Continued)
Figure 7. Contours of Constant Gain
Bandwidth Product (f
T
)
Figure 8. Normalized Collector-Cutoff Current
vs Ambient Temperaure
Figure 9. Wideband Noise Frequency
vs Source Resistance
Figure 10. Noise Figure vs Frequency
Figure 11. Collector-Cutoff Current
vs Ambient Temperature
Figure 12. Contours of Constant Narrow
Band Noise Figure
µ
µ
µ
0.1
1
10
100
1
2
3
5
7
10
I - COLLECTOR CURRENT (mA)
V
-
CO
L
L
E
C
T
O
R
VO
L
T
A
G
E
(
V
)
C
175 MHz
150 MHz
125 MHz
75 MHz
100 MHz
µ
µ
µ
µ
µ
µ
µ
25
50
75
100
125
150
1
10
100
1000
T - AMBIE NT TEMP ERATURE ( C)
CH
AR
AC
T
E
R
I
S
T
I
C
S
R
E
L
A
T
I
V
E
T
O
V
A
L
U
E
AT
T
=
2
5
C
A
A
°
°
1,000
2,000
5,000
10,000
20,000
50,000
100,000
0
1
2
3
4
5
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
V = 5.0 V
BANDWIDTH = 15.7 kHz
CE
I = 10
µ
A
C
I = 100
µ
A
C
S
I = 30
µ
A
µ
µ
µ
µ
µ
0.0001
0.001
0.01
0.1
1
10
100
0
2
4
6
8
10
f - FREQUENCY (MHz)
N
F
-
NO
I
S
E
F
I
GU
RE
(
d
B
)
V = 5.0V
CE
I = 200
µ
A,
R = 10 k
C
S
I = 1.0 mA,
R = 500
C
S
I = 100
µ
A,
R = 10 k
C
S
I = 1.0 mA,
R = 5.0 k
C
S
µ
µ
µ
0
25
50
75
100
125
150
0
125
250
375
500
625
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
I
S
S
IP
A
T
IO
N
(
m
W
)
D
o
TO-92
µ
µ
SOT-23
µ
1
10
100
1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLECTOR CURRENT ( A)
R
-
SO
U
R
C
E
R
E
SI
ST
A
N
C
E (
)
µ
C
S
V = 5.0 V
f = 100 Hz
BANDWIDTH
= 20 Hz
CE
3.0 dB
4.0 dB
8.0 dB
10 dB
12 dB
14 dB
µ
6.0
D
B
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC183LC
Typical Characteristics
(Continued)
Figure 13. Contours of Constant Narrow
Band Noise Figure
Figure 14. Contours of Constant Narrow
Band Noise Figure
Figure 15. Contours of Constant Narrow
Band Noise Figure
Figure 16. Typical Common Emitter Characteristics
Figure 17. Typical Common Eimtter Characteristics
Figure 18. Typical Common Emitter Characteristics
1
10
100
1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLECTOR CURRENT ( A)
R
-
SOU
RC
E
R
E
SI
ST
ANC
E (
)
µ
C
S
V = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz
CE
6.0 dB
3.0 dB
4.0 dB
8.0 dB
µ
µ
2.0
D
B
µ
µ
1
10
100
1000
100
200
500
1000
2000
5000
10000
I - COLLECTOR CURRENT ( A)
R
-
S
O
UR
CE
R
E
SI
S
T
A
N
C
E
(
)
6.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
1.0 dB
C
V = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
CE
S
µ
µ
µ
0.01
0.1
1
10
100
200
500
1000
2000
5000
10000
I - COLLECTOR CURRENT ( A)
R
-
S
O
U
R
C
E
RES
I
S
T
A
N
C
E
(
)
7.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
5.0
dB
C
V =
5.0V
CE
S
µ
f = 1.0 MHz
BANDWIDTH
= 200kHz
6.0
dB
-100
-50
0
50
100
150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - JUNCTIO N TEMP ERATURE ( C)
C
H
A
R
A
C
TE
R
I
S
T
I
C
S
R
E
LA
T
I
V
E
TO
V
A
L
U
E
(
T
=
2
5
C
)
J
A
°
h
oe
h
re
h
ie
h
fe
h
oe
h
re
h
ie
h
fe
V = 5.0V
f = 1.0kHz
I = 1.0mA
-100
-50
0
50
100
150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - JUNCTIO N TEMP ERATURE ( C)
C
H
A
R
A
C
TE
R
I
S
T
I
C
S
R
E
LA
T
I
V
E
TO
V
A
L
U
E
(
T
=
2
5
C
)
J
A
°
h
oe
h
re
h
ie
h
fe
h
oe
h
re
h
ie
h
fe
V = 5.0V
f = 1.0kHz
I = 1.0mA
0.1
0.2
0.5
1
2
5
10
20
50
100
0.01
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
CHA
RAC
T
E
RI
S
T
I
C
S
R
E
L
A
T
I
V
E
T
O
V
A
L
U
E
(
I
=
1
m
A
)
C
C
f = 1.0kHz
h
oe
h
oe
h and h
ie
h
fe
h
re
h
ie
Package Dimensions
BC183LC
0.46
±
0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
±
0.20
]
1.27TYP
[1.27
±
0.20
]
3.60
±
0.20
14.47
±
0.40
1.02
±
0.10
(0.25)
4.58
±
0.20
4.58
+0.25
0.15
0.38
+0.10
0.05
0.38
+0.10
0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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