VH321/4
2-Input OR Gate
V4
d
MC74VHC1G32
V4
d
1
3
2
4
5
SOT23/TSOP5/SC59
DT SUFFIX
CASE 483
The MC74VHC1G32 is an advanced high speed CMOS 2input OR gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G32 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G32 to be used to interface 5 V circuits to 3 V circuits.
· High Speed: t
PD
= 3.7 ns (Typ) at V
CC
= 5 V
· Low Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25°C
· Power Down Protection Provided on Inputs
· Balanced Propagation Delays
· Pin and Function Compatible with Other Standard Logic Families
· Chip Complexity: FETs = 60; Equivalent Gates = 15
SC70/SC88A/SOT353
DF SUFFIX
CASE 419A
1
3
2
4
5
MARKING DIAGRAMS
Pin 1
d = Date Code
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
IN B
2
IN A
3
GND
4
OUT Y
5
V
CC
FUNCTION TABLE
Inputs
Output
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
H
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH322/4
MC74VHC1G32
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage
2.0
5.5
V
V
IN
DC Input Voltage
0.0
5.5
V
V
OUT
DC Output Voltage
0.0
V
CC
V
T
A
Operating Temperature Range
55
+ 125
°C
t
r
,t
f
Input Rise and Fall Time
V
CC
= 3.3 ± 0.3 V
0
100
ns/V
V
CC
= 5.0 ± 0.5 V
0
20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature °C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
NORMALIZED F
AILURE RA
TE
Figure 3. Failure Rate vs. Time Junction Temperature
1
1
10
100
1000
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
0.5 to + 7.0
V
V
IN
DC Input Voltage
0.5 to 7.0
V
V
OUT
DC Output Voltage
V
CC
=0
0.5 to 7.0
V
High or Low State
0.5 to V
cc
+ 0.5
I
IK
Input Diode Current
20
mA
I
OK
Output Diode Current
V
OUT
< GND; V
OUT
> V
CC
+20
mA
I
OUT
DC Output Current, per Pin
+ 25
mA
I
CC
DC Supply Current, V
CC
and GND
+50
mA
P
D
Power dissipation in still air
SC88A, TSOP5
200
mW
JA
Thermal resistance
SC88A, TSOP5
333
°C/W
T
L
Lead Temperature, 1 mm from Case for 10 s
260
°C
T
J
Junction Temperature Under Bias
+ 150
°C
T
stg
Storage temperature
65 to +150
°C
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I
LATCHUP
LatchUp Performance
Above V
CC
and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78
TIME, YEARS
VH323/4
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25°C
T
A
< 85°C 55°C<T
A
<125°C
Symbol Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
V
IH
Minimum HighLevel
2.0
1.5
1.5
1.5
V
Input Voltage
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
5.5
3.85
3.85
3.85
V
IL
Maximum LowLevel
2.0
0.5
0.5
0.5
V
Input Voltage
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V
OH
Minimum HighLevel
V
IN
= V
IH
or V
IL
2.0
1.9
2.0
1.9
1.9
V
Output Voltage
I
OH
= 50
µ
A
3.0
2.9
3.0
2.9
2.9
V
IN
= V
IH
or V
IL
4.5
4.4
4.0
4.4
4.4
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
3.0
2.58
2.48
2.34
I
OH
= 8 mA
4.5
3.94
3.80
3.66
V
OL
Maximum LowLevel
V
IN
= V
IH
or V
IL
2.0
0.0
0.1
0.1
0.1
V
Output Voltage
I
OL
= 50
µ
A
3.0
0.0
0.1
0.1
0.1
V
IN
= V
IH
or V
IL
4.5
0.0
0.1
0.1
0.1
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
3.0
0.36
0.44
0.52
I
OL
= 8 mA
4.5
0.36
0.44
0.52
I
IN
Maximum Input
V
IN
= 5.5 V or GND 0 to5.5
±
0.1
±
1.0
±
1.0
µ
A
Leakage Current
I
CC
Maximum Quiescent
V
IN
= V
CC
or GND
5.5
2.0
20
40
µ
A
Supply Current
MC74VHC1G32
AC ELECTRICAL CHARACTERISTICS C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns
T
A
= 25°C
T
A
< 85°C 55°C<T
A
<125°C
Symbol Parameter
Test Conditions
Min
Typ
Max
Min
Max
Min
Max Unit
t
PLH
,
Maximum
V
CC
= 3.3
±
0.3 V
C
L
= 15 pF
4.8
7.9
9.5
11.5
ns
t
PHL
Propagation Delay,
C
L
= 50 pF
6.1
11.4
13.0
15.5
Input A or B to Y
V
CC
= 5.0
±
0.5 V C
L
= 15 pF
3.7
5.5
6.5
8.0
C
L
= 50 pF
4.4
7.5
8.5
10.0
C
IN
Maximum Input
5.5
10
10
10
pF
Capacitance
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6)
11
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR)
= C
PD
·
V
CC
·
f
in
+ I
CC
.
C
PD
is used to determine the no
load dynamic power consumption; P
D
= C
PD
· V
CC
2
·
f
in
+ I
CC
·
V
CC
.
VH324/4
MC74VHC1G32
Figure 4. Switching Waveforms
*Includes all probe and jig capacitance
Figure 5. Test Circuit
DEVICE ORDERING INFORMATION
Device Nomenclature
MC74VHC1G32DFT1
MC
74
VHC1G
32
DF
T1
SC70/SC88A/
178 mm (7 in)
SOT353
3000 Unit
MC74VHC1G32DFT2
MC
74
VHC1G
32
DF
T2
SC70/SC88A/
178 mm (7 in)
SOT353
3000 Unit
MC74VHC1G32DFT4
MC
74
VHC1G
32
DF
T4
SC70/SC88A/
330 mm (13 in)
SOT353
10,000 Unit
MC74VHC1G32DTT1
MC
74
VHC1G
32
DT
T1
SOT23/TSOPS/
178 mm (7 in)
SC59
3000 Unit
MC74VHC1G32DTT3
MC
74
VHC1G
32
DT
T3
SOT23/TSOPS/
330 mm (13 in)
SC59
10,000 Unit
Device
Order Number
Circuit
Indicator
Temp
Range
Identifier
Technology
Device
Function
Package
Suffix
Tape &
Reel
Suffix
Package Type
(Name/SOT#/
Common Name)
Tape and
Reel Size
PDF 
ZIP