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Part Number MC74VHC1G00

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VH0­1/4
2­Input NAND Gate
V1
d
MC74VHC1G00
V1
d
1
3
2
4
5
SOT­23/TSOP­5/SC­59
DT SUFFIX
CASE 483
The MC74VHC1G00 is an advanced high speed CMOS 2­input NAND gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is
composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G00 input
structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G00 to be
used to interface 5 V circuits to 3 V
circuits.
· High Speed: t
PD
= 3.0 ns (Typ) at V
CC
= 5 V
· Low Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25°C
· Power Down Protection Provided on Inputs
· Balanced Propagation Delays
· Pin and Function Compatible with Other Standard Logic Families
SC­70/SC­88A/SOT­353
DF SUFFIX
CASE 419A
1
3
2
4
5
MARKING DIAGRAMS
Pin 1
d = Date Code
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
IN B
2
IN A
3
GND
4
OUT Y
5
V
CC
FUNCTION TABLE
Inputs
Output
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH0­2/4
MC74VHC1G00
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
­ 0.5 to + 7.0
V
V
IN
DC Input Voltage
­ 0.5 to V
CC
+ 0.5
V
V
OUT
DC Output Voltage
­ 0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
± 20
mA
I
OK
DC Output Diode Current
± 20
mA
I
OUT
DC Output Sink Current
± 12.5
mA
I
CC
DC Supply Current per Supply Pin
± 25
mA
T
STG
Storage Temperature Range
­ 65 to + 150
°C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
T
J
Junction Temperature Under Bias
+ 150
°C
JA
Thermal Resistance
SC­70/SC­88A (Note 1)
150
°C/W
TSOP­5
200
P
D
Power Dissipation in Still Air at 85C
SC­70/SC­88A
150
mW
TSOP­5
230
MSL
Moisture Sensitivity
Level 1
F
R
Flammability Rating
Oxygen Index: 30% ­ 35%
UL 94 V­0 (0.125 in)
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I
LATCH­UP
Latch­Up Performance
Above V
CC
and Below GND at 85C (Note 5)
± 500
mA
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute­maximum­rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm­by­1 inch, 2­ounce copper trace with no air flow.
2. Tested to EIA/JESD22­A114­A.
3. Tested to EIA/JESD22­A115­A.
4. Tested to JESD22­C101­A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage
2.0
5.5
V
V
IN
DC Input Voltage
0.0
5.5
V
V
OUT
DC Output Voltage
0.0
V
CC
V
T
A
Operating Temperature Range
­ 55
+ 125
°C
t
r
,t
f
Input Rise and Fall Time
V
CC
= 3.3 ± 0.3 V
0
100
ns/V
V
CC
= 5.0 ± 0.5 V
0
20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature °C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
NORMALIZED F
AILURE RA
TE
Figure 3. Failure Rate vs. Time Junction Temperature
1
1
10
100
1000
TIME, YEARS
VH0­3/4
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25°C
T
A
< 85°C ­55°C to 125°C
Symbol Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
V
IH
Minimum High­Level
2.0
1.5
1.5
1.5
V
Input Voltage
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
5.5
3.85
3.85
3.85
V
IL
Maximum Low­Level
2.0
0.5
0.5
0.5
V
Input Voltage
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V
OH
Minimum High­Level
V
IN
= V
IH
or V
IL
2.0
1.9
2.0
1.9
1.9
V
Output Voltage
I
OH
= ­ 50
µ
A
3.0
2.9
3.0
2.9
2.9
V
IN
= V
IH
or V
IL
4.5
4.4
4.0
4.4
4.4
V
IN
= V
IH
or V
IL
I
OH
= ­4 mA
3.0
2.58
2.48
2.34
I
OH
= ­8 mA
4.5
3.94
3.80
3.66
V
OL
Maximum Low­Level
V
IN
= V
IH
or V
IL
2.0
0.0
0.1
0.1
0.1
V
Output Voltage
I
OL
= 50
µ
A
3.0
0.0
0.1
0.1
0.1
V
IN
= V
IH
or V
IL
4.5
0.0
0.1
0.1
0.1
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
3.0
0.36
0.44
0.52
I
OL
= 8 mA
4.5
0.36
0.44
0.52
I
IN
Maximum Input
V
IN
= 5.5 V or GND
0 to5.5
±
0.1
±
1.0
±
1.0
µ
A
Leakage Current
I
CC
Maximum Quiescent
V
IN
= V
CC
or GND
5.5
2.0
20
40
µ
A
Supply Current
MC74VHC1G00
AC ELECTRICAL CHARACTERISTICS C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns
T
A
= 25°C
T
A
< 85°C ­55°C<T
A
<125°C
Symbol Parameter
Test Conditions
Min
Typ
Max
Min
Max
Min
Max Unit
t
PLH
,
Maximum
V
CC
= 3.3
±
0.3 V
C
L
= 15 pF
4.5
7.9
9.5
11.0
ns
t
PHL
Propagation Delay,
C
L
= 50 pF
5.6
11.4
13.0
15.1
Input A or B to Y
V
CC
= 5.0
±
0.5 V C
L
= 15 pF
3.0
5.5
6.5
8.0
C
L
= 50 pF
3.8
7.5
8.5
10.0
C
IN
Maximum Input
5.5
10
10
10
pF
Capacitance
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6)
10
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR)
= C
PD
·
V
CC
·
f
in
+ I
CC
.
C
PD
is used to determine the no­
load dynamic power consumption; P
D
= C
PD
·
V
CC
2
·
f
in
+ I
CC
·
V
CC
.
Figure 4. Switching Waveforms
Figure 5. Test Circuit
*Includes all probe and jig capacitance.
A 1­MHz square input wave is recommended
for propagation delay tests.
VH0­4/4
DEVICE ORDERING INFORMATION
MC74VHC1G00
Device Nomenclature
Device Order
Number
Logic
Circuit
Indicator
Temp
Range
Identifier
Technology
Device
Function
Package
Suffix
Tape and
Reel Suffix
Package Type
(Name/SOT#/
Common Name)
Tape and
Reel Size
MC74VHC1G00DFT
MC
74
VHC1G
00
DF
T1
SC­70/SC­88A/
178 mm (7 in)
SOT­353
3000 Unit
MC74VHC1G00DFT2
MC
74
VHC1G
00
DF
T2
SC­70/SC­88A/
178 mm (7 in)
SOT­353
3000 Unit
MC74VHC1G00DTT1
MC
74
VHC1G
00
DT
T1
SOT­23/TSOP­5/
178 mm (7 in)
SC­59
3000 Unit