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Part Number OMS410

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2.1 - 53
2.1
Three Phase, 100 Volt, 15 To 45 Amp Bridge
With Current And Temperature Sensing
In A Low Profile Package
4 11 R0
3 PHASE, LOW VOLTAGE, LOW R
DS(on)
, MOSFET
BRIDGE CIRCUIT IN A PLASTIC PACKAGE
FEATURES
· Three Phase Power Switch Configuration
· Zener Gate Protection
· 10 Miliohm Shunt Resistor
· Linear Thermal Sensor
· Isolated Low Profile Package
· Output Currents Up To 45 Amps
DESCRIPTION
This series of MOSFET switches is configured in a 3 phase bridge with a common
V
DD
line, precision series shunt resistor in the source line, and a sensing element to
monitor the substrate temperature. This device is ideally suited for Motor Control
applications where size, performance, and efficiency are key.
MAXIMUM RATINGS
(@ 25°C)
Part
V
DS
R
DS(on)
I
D
Package
Number
(Volts)
(m )
(Amps)
OMS410
100
85
15
MP-3
OMS410A
100
85
20
MP-3
OMS510
100
42
45
MP-3
SCHEMATIC
OMS410A
OMS410
OMS510
2
1
6
5
10
9
3 4
7 8
1112
13
14
15, 16, 17
18, 19, 20
32, 33, 34
29, 30, 31
26, 27, 28
23, 24, 25
21
22
2.1 - 54
OMS410, OMS410A, OMS510
2.1
ELECTRICAL CHARACTERISTICS: OMS410
(T
C
= 25° unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
V
BRDSS
100
-
-
V
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
I
DSS
-
-
10
µA
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
-
-
100
µA
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
-
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 µA
V
GSth
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 9.0 A
R
DSon
-
-
0.058
Static Drain-Source On-Resistance
T
C
= 70°C
-
-
0.1
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
Don
15
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 9.0 A,
g
fs
9.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
C
iss
-
-
2600
pF
Output Capacitance
V
GS
= 0,
C
oss
-
-
910
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
-
350
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
don
-
-
35
ns
Rise Time
V
DD
= 100 V, I
D
=
15 A,
t
r
-
-
290
ns
Turn-Off Delay Time
R
GS
= 10 , V
GS
= 10 V
t
doff
-
-
85
ns
Fall Time
t
f
-
-
120
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
-
-
14
A
Source - Drain Current (Pulsed)
I
SDM
*
-
-
56
A
Forward On-Voltage
I
SD
= 28 A, V
GS
= 0,
V
SD
-
-
2.5
V
Reverse Recovery Time
I
SD
= 13 A, di/dt = 100 A/µSec
t
rr
-
133
-
ns
Reverse Recovered Charge
Q
rr
-
0.85
-
µC
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40°C to +70°C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Parameter
OMS410
OMS410A
OMS510
Units
V
DS
Drain-Source Voltage
100
100
100
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 m )
100
100
100
V
I
D
@ T
C
= 25°C
Continuous Drain Current
15
20
45
A
I
D
@ T
C
= 70°C
Continuous Drain Current
11
16
45
A
I
DM
Pulsed Drain Current
1
110
110
180
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
2
33
33
66
W
P
D
@ T
C
= 70°C
Maximum Power Dissipation
2
18
18
36
W
Junction-To-Case Linear Derating Factor
0.33
0.33
0.66
W/°C
Thermal Resistance Junction-To-Case
3.0
3.0
1.5
°C/W
Sense Resistor
0.010
0.010
0.010
Ohms
Note 1: Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
Note 2: Maximum Junction Temperature equal to 125°C.
2.1 - 55
OMS410, OMS410A, OMS510
2.1
ELECTRICAL CHARACTERISTICS: OMS520
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
V
(BRDSS
100
-
-
V
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
I
DSS
-
-
10
µA
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
-
-
100
µA
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
-
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 µA
V
GS(th)
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 10 A
R
DS(on)
-
-
0.058
Static Drain-Source On-Resistance
T
C
= 70°C
-
-
0.100
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
D(on)
20
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 10 A
g
fs
9.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
C
iss
-
-
2600
pF
Output Capacitance
V
GS
= 0,
C
oss
-
-
910
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
-
350
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
-
35
ns
Rise Time
V
DD
= 100 V, I
D
=
20 A,
t
r
-
-
290
ns
Turn-Off Delay Time
R
GS
= 10 , V
GS
= 10 V
t
d(off)
-
-
85
ns
Fall Time
t
f
-
-
120
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
-
-
20
A
Source - Drain Current (Pulsed)
I
SD
= 28 A, V
GS
= 0,
I
SDM
*
-
-
56
A
Forward On-Voltage
I
SD
= 20 A,
V
SD
-
-
2.5
V
Reverse Recovery Time
di/dt = 100 A/µSec
t
rr
-
133
-
ns
Reverse Recovered Charge
Q
rr
-
0.85
-
µC
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40°C to +70°C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%.
OMS410, OMS410A, OMS510
2.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
.360
.180
.020
.360 MAX.
2.000
1.350
.150
(4) PLCS.
4.000
3.000
.150
.500
.500
.250
.250
.600
.325
.050
(34) PLCS.
.300
2.450
.
135
Pin 1: Gate Q1
Pin 2: Source Q1
Pin 3: Gate Q2
Pin 4: Source Q2
Pin 5: Gate Q3
Pin 6: Source Q3
Pin 7: Gate Q4
Pin 8: Source Q4
Pin 9: Gate Q5
Pin 10: Source Q5
Pin 11: Gate Q6
Pin 12: Source Q6
Pin 13: +Sense Res.
Pin 14: -Sense Res.
Pin 15: Power GND
Pin 16: Power GND
Pin 17: Power GND
Pin 34: V
DD
Pin 33: V
DD
Pin 32: V
DD
Pin 31: Output Phase A
Pin 30: Output Phase A
Pin 29: Output Phase A
Pin 28: Output Phase B
Pin 17: Output Phase B
Pin 26: Output Phase B
Pin 25: Output Phase C
Pin 24: Output Phase C
Pin 23: Output Phase C
Pin 22: +PTC
Pin 21: -PTC
Pin 20: Power GND
Pin 19: Power GND
Pin 18: Power GND
Mechanical Outline
1
Notes: ·Contact factory for lead bending options.
·Mounting Recommendations: Maximum Mounting Torque: 3.0 mN.
The module must be attached to a flat heat sink (flatness 100
m
m maximum).
ELECTRICAL CHARACTERISTICS: OMS510
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
V
(BRDSS
100
-
-
V
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
I
DSS
-
-
20
µA
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
-
-
200
µA
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
-
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 µA
V
GS(th)
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 22.5 A
R
DS(on)
-
-
0.029
Static Drain-Source On-Resistance
T
C
= 70°C
-
-
0.050
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
D(on)
45
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 40 A
g
fs
18
-
-
mho
Input Capacitance
V
DS
= 100 V,
C
iss
-
-
5200
pF
Output Capacitance
V
GS
= 0,
C
oss
-
-
1820
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
-
700
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
-
70
ns
Rise Time
V
DD
= 100 V, I
D
=
45 A,
t
r
-
-
580
ns
Turn-Off Delay Time
R
GS
= 10 , V
GS
= 10 V,
t
d(off)
-
-
170
ns
Fall Time
t
f
-
-
240
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
-
-
45
A
Source - Drain Current (Pulsed)
I
SDM
*
-
-
120
A
Forward On-Voltage
I
SD
= 45 A, V
GS
= 0,
V
SD
-
-
2.5
V
Reverse Recovery Time
I
SD
= 45 A,
t
rr
-
240
-
ns
Reverse Recovered Charge
di/dt = 100 A/µSec
Q
rr
-
1.605
-
µC
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40°C to +70°C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%.