Description
Features
ISO
LINK
SCHEMATIC
PACKAGE OUTLINE
1. Measured between pins 1, 2 and 6 shorted together and pins 3,4 and 5 shorted together. T
A
= 25
°
C and duration = 1 second.
2. Derate linearly to 125
°
C free-air temperature at 0.67 mA /
°
C above 65
°
C.
3. For pulse width
1
µ
S, pulse repetition rate
300 pps.
4. Derate linearly to 125
°
C free-air temperature at 3.0 mW /
°
C above 25
°
C
NOTES:
OLS 249
Radiation Tolerant
Phototransistor
Hermetic Surface Mount
Optocoupler
The OLS249 consists of a light emitting
diode optically coupled to a NPN silicon
phototransistor mounted and coupled in a
custom hermetic surface mount LCC package.
The very low input current makes the OLS249
well suited for direct CMOS to LSTTL / TTL
interfaces.
Electrical parameters are similar to the
JEDEC registered 4N49 optocoupler but with
much better CTR degradation characteristics due
to radiation exposure
Special electrical parametric selections are
availabe on request.
Hermetic SMT package
1500 Vdc electrical isolation
High current transfer ratio
Small package size
High reliability and rugged construction
Hi-rel screening available
Radiation tolerant
.065
.090
.100
.050
.025 (6 PLS)
.170±.010
.245±.010
.080
MAX.
1
6
2
3
4
5
OLS XXX
XXYY
1
6
5
4
CATHODE
ANODE
3
BASE
COLLECTOR
EMITTER
ELECTRICAL CHARACTERISTIC ( T
A
= 25
°
C, Unless Otherwise Specified )
Parameter
Symbol Min Max Units Test Conditions Fig. Note
Absolute Maximum Ratings
±
1500 Vdc
-65
°
C to + 150
°
C
-55
°
C to + 125
°
C
240
°
C
40 mA
1 A
2.0 V
40 V
7 V
45 V
50 mA
300 mW
Coupled
Input to Output Isolation Voltage
1
Storage Temperature Range
Operation Temperature Range
Mounting Temperature Range ( 10 seconds max. )
Input Diode
Average Input Current
2
Peak Forward Current
3
Reverse Voltage
Output Detector
Collector - Emitter Voltage
Emitter - Base Voltage
Collector - Base Voltage
Continuous Collector Current
Power Dissipation
4
On-State Collector Current
On-State Coll.-Base Current
Saturation Voltage
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Off-State Leakage Current
Collector to Emitter
Collector to Base
Input Forward Voltage
Input Reverse Current
Input to Output Resistance
Input to Output Capacitance
Rise Time
Fall Time
I
C (ON)
I
CB(ON)
V
CE(SAT)
B
VCEO
B
VCBO
B
VEBO
I
CE(OFF)
I
CB(OFF)
V
F
I
R
r
I - O
c
I - O
t r
t f
I
F
= 1 mA, V
CE
= 5.0V
I
F
= 2 mA, V
CE
= 5.0V, T
A
= -55
°
C
I
F
= 2 mA, V
CE
= 5.0V, T
A
= 100
°
C
I
F
= 10 mA, V
CB
= 5.0V
I
F
= 2mA, I
C
=2.0mA
I
CE
= 1 mA
I
CB
= 100
µ
A
I
EB
= 100
µ
A
V
CE
= 20V
V
CE
= 20V, TA =100
°
C
V
CB
= 20V
I
F
= 10mA, TA = -55
°
C
I
F
= 10mA
I
F
= 10mA, TA = 100
°
C
V
R
= 2.0V
V
I-O
=
±
1000Vdc
V
I-O
= 0V, f = 1 MHz
V
CC
= 10V, RL = 100
I
F
= 5mA
1
1
12
0.3
100
100
10
2.2
1.8
1.6
100
5
25
25
mA
mA
mA
µ
A
V
V
V
V
nA
µ
A
nA
V
V
V
µ
A
pF
µ
S
µ
S
2,3
1
1
1
4
2.0
2.8
2.0
30
40
45
7
1.8
1.4
1.2
10
11
TYPICAL PERFORMANCE CURVES
150
125
100
75
50
25
0
-25
-50
-75
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
AMBIENT TEMPERATURE (°C)
NORMALIZED CTRCE
NORMALIZED TO:
V
CE = 5V
T
A = 25 °C
I
F = 1 mA
Fig. 3 -
Normalized CTR vs. Temperature
NORMALIZED COLLECTOR CURRENT
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
I
F
= FORWARD CURRENT ( mA )
NORMALIZED TO:
I
F = 1 mA
VCE = 5V
T
A = 25 °C
Fig. 2 -
Normalized Ic vs. I
F
Fig. 1 -
Diode Forward Characteristics
2.1
1.9
1.7
1.5
1.3
1.1
0.9
.1
1
10
100
V
F
- FORWARD VOLTAGE ( V )
I
F
- FORWARD CURRENT ( mA )
125 °C
25 °C
-55 °C
Pulse Width = 100µS
Duty Cycle = 1%
Fig. 4 -
Switching Test Circuit
10 %
90 %
V
OUT
INPUT
I
F
0
0
t
r
t
f
R
L
V
OUT
V
CC
I
F
100
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