2SC1008
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 0.8 W
Tamb=25
Collector current
I
CM
: 0.7 A
Collector-base voltage
V
(BR)CBO
: 80 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
80
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 10mA , I
B
=0
60
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 10
A
I
C
=0
8
V
Collector cut-off current
I
CBO
V
CB
=60 V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 5 V , I
C
=0
0.1
A
DC current gain
h
FE
V
CE
= 2 V, I
C
=50mA
40
400
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 500mA, I
B
=50 mA
0.4
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=500mA, I
B
=50mA
1.1
V
Transition frequency
f
T
V
CE
=10V, I
C
= 50mA
30
MHz
CLASSIFICATION OF h
FE
Rank
R
O
Y
G
Range
40-80
70-140
120-240
200-400
1
2
3
TO
--
92
1.EMITTER
2. BASE
3. COLLECTOR
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
TO-92 Plastic-Encapsulate Transistors
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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