RBV800D - RBV810D
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
800D
RBV
801D
RBV
802D
RBV
804D
RBV
806D
RBV
808D
RBV
810D
UNIT
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc = 55
°
C
I
F(AV)
8.0
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
I
FSM
300
Amps.
Current Squared Time at t < 8.3 ms.
I
2
t
166
A
2
S
Maximum Forward Voltage per Diode at I
F
= 8.0 Amps.
V
F
1.0
Volts
Maximum DC Reverse Current Ta = 25
°
C
I
R
10
µ
A
at Rated DC Blocking Voltage Ta = 100
°
C
I
R(H)
200
µ
A
Typical Thermal Resistance (Note 1)
R
JC
2.2
°
C/W
Typical Thermal Resistance at Junction to Ambient
R
JA
15
°
C/W
Operating Junction Temperature Range
T
J
- 40 to + 150
°
C
Storage Temperature Range
T
STG
- 40 to + 150
°
C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.
UPDATE : AUGUST 3, 1998
RATING
RBV25
Dimensions in millimeters
C3
4.9 ± 0.2
3.9 ± 0.2
3.2 ± 0.1
11 ± 0.2
17.5 ± 0.5
20 ± 0.3
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
+
+
7.5
±0.2
13.5 ± 0.3
RATING AND CHARACTERISTIC CURVES ( RBV800D - RBV810D )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
FORWARD VOLTAGE, VOLTS
Tc = 50
°
C
HEAT-SINK MOUNTING,
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm) Al.-PLATE
8.0
6.0
4.0
2.0
12
100
10
1.0
200
0
300
0
150
100
50
0.1
10
80
0.01
0.01
1.0
0.1
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT CURRENT
AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
T
J
= 25
°
C
Pulse Width = 300
µ
s
1 % Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
T
J
= 50
°
C
T
J
= 100
°
C
T
J
= 25
°
C
10
250
10
20
60
1
2
4
6
40
100
1.4
1.6
0.4
0.6
0.8
1.0
1.2
1.8
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