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www.dynexsemi.com
MP02X130 Series
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (non-toxic) Isolation Medium
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP02HBT130-20 or MP02HBT130-18 or MP02HBT130-16
MP02HBP130-20 or MP02HBP130-18 or MP02HBP130-16
MP02HBN130-20 or MP02HBN130-18 or MP02HBN130-16
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
DRM
2000V
I
TSM
4000A
I
T(AV)(per arm)
134A
V
isol
3000V
MP02X130 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces January 2000 version, DS4477-4.0
DS4477-5.0 August 2001
Code
Circuit
HBT
HBP
HBN
Fig.1 Circuit diagrams
1
2
3
Fig. 2 Electrical connections - (not to scale)
Module type code: MP02.
For further information see Package Details.
Lower voltage grades available.
Repetitive
Peak
Voltages
V
DRM
V
RRM
Type
Number
2000
1800
1600
MP02X130-20
MP02X130-18
MP02X130-16
T
vj
= 125
o
C
I
DRM
= I
RRM
= 30mA
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Conditions
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MP02X130 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Test Conditions
Half wave resistive load
T
case
= 75°C
T
case
= 85°C
T
case
= 75°C
10ms half sine, T
j
= 125°C
V
R
= 0
10ms half sine, T
j
= 125°C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
134
112
210
4.0
80 x 10
3
3.2
51.2 x 10
3
3000
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M6
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
°C/kW
°C/kW
°C/kW
°C/kW
°C
°C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.21
0.22
0.23
0.07
125
125
6 (55)
5 (44)
350
Min.
-
-
-
-
-
40
-
-
-
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MP02X130 Series
Units
mA
V/
µ
s
A/
µ
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125°C
To 67% V
DRM
, T
j
= 125°C
From 67% V
DRM
to 400A,
Repetitive 50Hz
gate source 20V, 20
,
t
r
= 0.5
µ
s, T
j
= 125°C
At T
vj
= 125°C. See note 1
At T
vj
= 125°C. See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
30
1000
500
1.25
1.33
Min.
-
-
-
-
-
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.0
200
0.2
30
0.25
5
4
16
3
Units
V
mA
V
V
V
V
A
W
W
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MP02X130 Series
Fig. 6 Transient thermal impedance - dc
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(Thyristor or diode with 50% V
RRM
at T
case
= 125°C)
Fig. 5 Gate characteristics
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage, V
T
- (V)
1000
800
600
400
200
0
Instantaneous on-state current, I
T
- (A)
T
j
= 125°C
1
10
1
2 3 4 5
50
0
1
5
Duration
0
10
20
Peak half sine wave on-state current - (kA)
ms
cycles at 50Hz
I
2
t value - (A
2
s x 10
3
)
30
I
2
t
8
7
6
4
3
2
40
50
60
50
10
1
0.1
Gate voltage, V
G
- (V)
0.01
0.1
1
10
Gate current, I
G
- (A)
T
j
=
40
°
C
T
j
= 125
°
C
T
j
= 25
°
C
P
GM
= 16W
0.001
0.010
0.100
1.0
10
100
Time - (s)
0
0.1
0.2
0.3
Thermal impedance - (
°
C/W)
R
th(j-hs)
R
th(j-c)
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MP02X130 Series
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
Fig. 9 Maximum permissible case temperature vs on-state
current at specified conduction angles, sine wave 50/60Hz
Fig. 10 Maximum permissible case temperature vs on-state
current at specified conduction angles, square wave 50/60Hz
0
25
50
75
100
125
150
Mean on-state current, I
T(AV)
- (A)
300
200
100
0
On-state power loss per arm - (W)
180°
120°
90°
60°
30°
0
25
50
75
100
125
150
Mean on-state current, I
T(AV)
- (A)
300
200
100
0
On-state power loss per arm - (W)
180°
120°
90°
60°
30°
d.c.
0
25
50
75
100
125
150
Mean on-state current, I
T(AV)
- (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (
°
C)
180°
120°
90°
60°
30°
140
0
25
50
75
100
125
150
Mean on-state current, I
T(AV)
- (A)
Maximum permissible case temperature - (
°
C)
180°
120°
90°
60°
30°
d.c.
120
100
80
60
40
20
0
140
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www.dynexsemi.com
MP02X130 Series
0
40
80
0
20
40
60
80
120
140 160
180
100
200
600
500
400
300
200
100
0
Total power - (W)
100
60
20
Maximum ambient temperature - (°C)
D.C. output current - (A)
R - Load
L - Load
R
th(hs-a)
°C/W
0.02
0.04
0.08
0.10
0.12
0.15
0.20
0.30
0.40
Fig. 11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance
(Note: R
th(hs-a)
values given above are true heatsink thermal resistances to ambient and already account for R
th(c-hs)
module contact thermal)
Fig. 12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance
(Note: R
th(hs-a)
values given above are true heatsink thermal resistances to ambient and already account for R
th(c-hs)
module contact thermal)
0
40
80
600
500
400
300
200
100
0
Total power - (W)
100
60
20
Maximum ambient temperature - (°C)
D.C. output current - (A)
R
th(hs-a)
°C/W
0.02
0.04
0.08
0.10
0.12
0.15
0.20
0.30
0.40
20
0
40
60
80
120
140 160
180
100
200
R & L- Load
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MP02X130 Series
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
23
23
24
13
80
34
30
94
3x M6
12.8
2 holes Ø6.5
1
2
3
24
5
15
K
2
G
2
K
1
G
1
Nominal weight: 350g
Recommended fixings for mounting: M6 socket head cap screws
Recommended mounting torque: 6Nm (55lb.ins)
Recommended torque for electrical connections: 5Nm (44lb.ins)
Maximum torque for electrical connections: 8Nm (70lb.ins)
Module outline type code: MP02
1
2
3
K
2
G
2
G
1
K
1
1
2
3
Circuit type: HBN
Circuit type: HBT
Circuit type: HBP
G
1
K
1
1
2
3
K
2
G
2
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
temperature at 75
°
C if full rated current is to be achieved. Power
dissipation may be calculated by use of V
T(TO)
and r
T
information
in accordance with standard formulae. We can provide
assistance with calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32
µ
in) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material. Care should be taken to ensure no
foreign particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
After application of thermal compound, place the module
squarely over the mounting holes, (or `T' slots) in the heatsink.
Fit and finger tighten the recommended fixing bolts at each end.
Using a torque wrench, continue to tighten the fixing bolts by
rotating each bolt in turn no more than 1/4 of a revolution at a
time, until the required torque of 6Nm (55lbs.ins) is reached on
all bolts at both ends.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
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MP02X130 Series
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4477-5 Issue No. 5.0 August 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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