GP201MHS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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FEATURES
s
Low V
CE(SAT)
s
Non Punch Through Silicon
s
Isolated Copper Baseplate
s
Low Inductance Internal Construction
s
200A Per Arm
APPLICATIONS
s
High Reliability Inverters
s
Motor Controllers
s
Traction Drives
s
Resonant Converters
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP201MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
CE(SAT)
to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP201MHS18
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
1800V
V
CE(sat)
(typ)
2.6V
I
C
(max)
200A
I
C(PK)
(max)
400A
GP201MHS18
Low V
CE(SAT)
Half Bridge IGBT Module
DS5290-2.1 January 2001
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: M
(See package details for further information)
3(C
1
)
2(E
2
)
1(E
1
C
2
)
11(C
2
)
9(C
1
)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
1
2
3
11
10
8
9
5
4
6
7
GP201MHS18
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
DC, T
case
= 80°C for T
j
= 125°C
1ms, T
case
= 120°C
T
case
= 25°C, T
j
= 150°C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
W
V
Max.
1800
±
20
200
400
1500
4000
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Max.
84
160
15
150
125
125
5
Min.
-
-
-
-
-
40
-
GP201MHS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
V
GE
=
±
20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, T
case
= 125°C
DC
t
p
= 1ms
I
F
= 200A
I
F
= 200A, T
case
= 125°C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
µ
A
V
V
V
A
A
V
V
nF
nH
Max.
1
7
±
1
6.5
3.2
4
200
400
2.5
2.6
-
-
Typ.
-
-
-
5.5
2.6
3.3
-
-
2.2
2.3
25
30
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
GP201MHS18
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µ
C
Max.
650
350
180
600
120
100
80
Typ.
500
250
90
450
90
70
50
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 200A, V
R
= 50% V
CES
,
dI
F
/dt = 2500A/
µ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case
= 125°C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µ
C
Max.
800
450
200
700
130
150
110
Typ.
600
350
130
540
100
120
80
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 200A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
µ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
GP201MHS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical turn-on energy vs collector current
Fig. 6 Typical turn-off energy vs collector current
0
50
100
150
300
350
400
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25°C
250
200
0
50
100
150
300
350
400
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125°C
250
200
0
200
20
40
Collector current, I
C
- (A)
0
Turn-on energy, E
ON
- (mJ)
T
case
= 125°C
V
GE
=
±
15V
V
CE
= 900V
A: R
g
= 10
B: R
g
= 6.2
C: R
g
= 4.7
A
B
C
20
40
60
80
100
120
140
180
160
60
80
100 120
140 160
180
0
200
40
80
Collector current, I
C
- (A)
0
60
Turn-off energy, E
OFF
- (mJ)
T
case
= 125°C
V
GE
=
±
15V
V
CE
= 900V
A: R
g
= 10
B: R
g
= 6.2
C: R
g
= 4.7
A
B
C
20
40
80
100
120
140
160
100
180
160
140
120
60
20
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