32 Mega bit 3.3 Volt CMOS FLASH EEPROM
DP3Z2MX16PMTY5/DP3Z2MX16PMBY5
AD VANCED IN FOR MA TION
DE SCRIP TION:
The DP3Z2MX16PMTY5/DP3Z2MX16PMBY5 is a 32
megabit 3.3 Volt only CMOS Flash EEPROM
(Electrically In-System Programmable and Erasable
ROM Memory) module. These modules are
constructed of two 1M x 16 FLASH EEPROM's that are
configured as a 2M x 16.
The module features high speed access times with
common data inputs and outputs. The Flash devices
used in this module also features BGO (Blank Ground
Operations). This feature allows Program or Erase
operations to be performed on one bank of the device
while a read operation is performed on the other bank.
FEA TURES:
·
Organizations Available: 2M x 16
·
Fast Read Access Times: 80ns (V
DD
=3.3±0.3V)
90ns (V
DD
=2.7~3.6V)
·
Industrial Temperature: -40°C to +85°C
·
Low Power:
70 mA Maximum active (16 bit Mode)
10µA Maximum Standby (CMOS)
·
100K Program / Erase Cycles
·
3.3 Volt Only In-System Programming
·
Package: 56-Pin TSOP Stack
1
30A243-00
REV. B
PIN-OUT DI A GRAM
FUNC TIONAL BLOCK DI A GRAM
4 Meg Based, 10 - 17ns, LP-STACK
30A190-16
A
This document contains information on a product under consideration for
development at Dense-Pac Microsystems, Inc. Dense-Pac reserves the right to
change or discontinue information on this product without prior notice.
PIN NAMES
A0 - A19
Address
DQ0 - DQ15
Data Input / Output
CE0, CE1
Low Chip Enables
WE
Write Enable
OE
Output Enable
WP
Write Protect
RP
Reset/Power Down
BYTE
Byte Enable
RY/BY
Ready/Busy
V
DD
Power (+3.3V)
VSS
Ground
N.C.
No Connect
DP3Z2MX16PTMY5/DP3Z2MX16PMBY5
Dense-Pac Microsystems, Inc.
AD VANCED IN FOR MA TION
2
30A243-00
REV. B
OR DERING IN FOR MA TION
ME CHAN I CAL DRAWING
Dense-Pac Microsystems, Inc.
7321 Lincoln Way, Garden Grove, California 92841-1431
(714) 898-0007 u (800) 642-4477 u FAX: (714) 897-1772 u http://www.dense-pac.com
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