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Part Number IMT4

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DS30303 Rev. 2 - 2
1 of 3
IMT4
www.diodes.com
·
Epitaxial Planar Die Construction
·
Complementary NPN Type Available
(IMX8)
·
Small Surface Mount Package
Features
Maximum Ratings
@ T
A
= 25
°C unless otherwise specified
A
M
J
L
D
F
B C
H
K
B
2
B
1
E
1
C
2
E
2
C
1
Mechanical Data
·
Case: SOT-26, Molded Plastic
·
Case material - UL Flammability Rating
Classification 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Terminal Connections: See Diagram
·
Marking: KX7, See Page 2
·
Ordering & Date Code Information: See Page 2
·
Weight: 0.016 grams (approx.)
IMT4
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Characteristic
Symbol
IMT4
Unit
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current - Continuous
I
C
-50
mA
Power Dissipation (Note 1)
P
d
225
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
555
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
T
C
U
D
O
R
P
W
E
N
Electrical Characteristics
@ T
A
= 25
°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
-120
¾
¾
V
I
C
= -50
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-120
¾
¾
V
I
C
= -1.0mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
¾
¾
V
I
E
= -50
mA
Collector Cutoff Current
I
CBO
¾
¾
-0.5
mA
V
CB
= -100V
Emitter Cutoff Current
I
EBO
¾
¾
-0.5
mA
V
EB
= -4.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
180
¾
820
¾
I
C
= -2.0mA, V
CE
= -6.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
¾
¾
-0.5
V
I
C
= -10mA, I
B
= -1.0mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
¾
140
¾
MHz
V
CE
= -12V, I
E
= 2.0mA,
f = 100MHz
SOT-26
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
¾
¾
0.95
F
¾
¾
0.55
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
a
0
°
¾
All Dimensions in mm
B
2
B
1
E
1
C
2
E
2
C
1
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
DS30303 Rev. 2 - 2
2 of 3
IMT4
www.diodes.com
T
C
U
D
O
R
P
W
E
N
Marking Information
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Date Code Key
KX7
YM
KX7 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Ordering Information
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 3)
Device
Packaging
Shipping
IMT4-7
SOT-26
3000/Tape & Reel
0
50
100
150
200
250
0
100
200
P
,
POWER
D
ISSIP
A
TION
(mW)
d
T , AMBIENT TEMPERATURE (
°C)
A
Fig. 1, Power Derating Curve
(see Note 1)
0
100
200
300
1.0
10.0
100
h
,
DC
CURRENT
G
AIN
FE
I
COLLECTOR CURRENT (mA)
C,
Fig. 2 Typical DC Current Gain vs. Collector Current
400
500
T = 25
°C
a
T = -25
°C
a
T = 75
°C
a
V
= 6V
CE
DS30303 Rev. 2 - 2
3 of 3
IMT4
www.diodes.com
T
C
U
D
O
R
P
W
E
N
0.1
1.0
100
10.0
0
0.9
0.8
0.7
0.6
0.1
0.2
0.3
0.4
0.5
I
,
COLLECT
OR
CURRENT
(mA)
C
V
, BASE-EMITTER VOLTAGE (V)
BE(ON)
Fig. 3 Typical Collector Current vs.
Base-Emitter Voltage
T = 25
°C
a
T = -25
°C
a
T = 75
°C
a
V
= 6V
CE
0
0
1
2
4
3
5
6
7
0.5
1.5
1
2
2.5
3.5
3
4.5
4
5
I
,
COLLECT
OR
CURRENT
(
mA)
C
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 6 Typical Collector Current vs.
Collector-Emitter Voltage
T = 25
°C
a
1
10
1000
100
1
10
100
f
,
GAIN
BANDWIDTH
P
RODUCT
(MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Gain Bandwidth Product
vs. Collector Current
V
= 5V
CE
0.010
0.100
1.0
1
10
100
1000
V
,
COLLECT
O
R
T
O
EMITTER
S
A
T
URA
TION
CE(SA
T
)
VOL
T
AGE
(
V)
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Voltage
vs. Collector Current
T = 150
°C
a
T = -50
°C
a
T = 25
°C
a
I /I = 10
C B