B
Q1
S
Q2
D
Q2
E
Q1
C
Q1
G
Q2
Q2
Q1
DS30295 Rev. A-2
1 of 3
CTA2N1P
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
P
d
150
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
833
°C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
°C
Maximm Ratings, Total Device
@ T
A
= 25
°C unless otherwise specified
A
M
J
L
F
D
B C
H
K
A03
Maximum Ratings, Q1, NPN MMBT4401 NPN Transistor Element
@ T
A
= 25
°C unless otherwise specified
NEW
PRODUCT
CTA2N1P
COMPLEX TRANSISTOR ARRAY
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous
I
C
600
mA
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element
@ T
A
= 25
°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-50
V
Drain-Gate Voltage R
GS
£ 1.0MW
V
DGR
-50
V
Gate-Source Voltage
Continuous
V
GSS
±20
V
Drain Current
Continuous
I
D
-130
mA
Features
Mechanical Data
·
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
·
Case material - UL Flammability Rating
Classification 94V-0
·
Terminal Connections: See Diagram
·
Marking: A03
·
Weight: 0.006 grams (approx.)
·
Combines MMBT4401 type transistor with BSS84 type
MOSFET
·
Small Surface Mount Package
·
PNP/N-Channel Complement Available: CTA2P1N
DS30295 Rev. A-2
2 of 3
CTA2N1P
Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element
@ T
A
= 25
°C unless otherwise specified
NEW
PRODUCT
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element
@ T
A
= 25
°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
¾
V
I
C
= 100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
¾
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
¾
V
I
E
= 100
mA, I
C
= 0
Collector Cutoff Current
I
CEX
¾
100
nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
Base Cutoff Current
I
BL
¾
100
nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
20
40
80
100
40
¾
¾
¾
300
¾
¾
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
¾
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base- Emitter Saturation Voltage
V
BE(SAT)
0.75
¾
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
¾
6.5
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
¾
30
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
15
k
W
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1
8.0
x 10
-4
Small Signal Current Gain
h
fe
40
500
¾
Output Admittance
h
oe
1.0
30
mS
Current Gain-Bandwidth Product
f
T
250
¾
MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
¾
15
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
Rise Time
t
r
¾
20
ns
Storage Time
t
s
¾
225
ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Fall Time
t
f
¾
30
ns
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
-50
¾
¾
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
¾
¾
¾
¾
¾
¾
-15
-60
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= 25
°C
V
DS
= -50V, V
GS
= 0V, T
J
= 125
°C
V
DS
= -25V, V
GS
= 0V, T
J
= 25
°C
Gate-Body Leakage
I
GSS
¾
¾
±10
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
-0.8
¾
-2.0
V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS (ON)
¾
¾
10
W
V
GS
= -5V, I
D
= 0.100A
Forward Transconductance
g
FS
.05
¾
¾
S
V
DS
= -25V, I
D
= 0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
¾
¾
45
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
¾
¾
25
pF
Reverse Transfer Capacitance
C
rss
¾
¾
12
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
¾
10
¾
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50
W, V
GS
= -10V
Turn-Off Delay Time
t
D(OFF)
¾
18
¾
ns
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
DS30295 Rev. A-2
3 of 3
CTA2N1P
NEW
PRODUCT
0.001
0.01
1
10
0.1
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IB BASE CURRENT (mA)
Fig. 2 Typical Collector Saturation Region (MMBT4401)
VCE
COLLECT
OR-EMITTER
VOL
T
AGE
(V)
IC = 1mA
IC = 10mA
IC = 30mA
IC = 100mA
IC = 300mA
1.0
5.0
20
10
30
0.1
10
1.0
50
CAP
ACIT
ANCE
(pF)
REVERSE VOLTS (V)
Fig. 1 Typical Capacitance (MMBT4401)
Cobo
Cibo
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
CTA2N1P-7
SOT-363
3000/Tape & Reel
Ordering Information
(Note 3)
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
O
P
Date Code Key
A03 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
A03
YM
Marking Information
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