03/11/2004
RELIABILITY REPORT
FOR
DS21354, Rev B2
Dallas Semiconductor
4401 South Beltwood Parkway
Dallas, TX 75244-3292
Prepared by:
Ken Wendel
Reliability Engineering Manager
Dallas Semiconductor
4401 South Beltwood Pkwy.
Dallas, TX 75244-3292
Email : ken.wendel@dalsemi.com
ph: 972-371-3726
fax: 972-371-6016
mbl: 214-435-6610
Conclusion:
DS21354, Rev B2
The following qualification successfully meets the quality and reliability standards required of all Dallas
Semiconductor products and processes:
Device Description:
A description of this device can be found in the product data sheet. You can find the product data
sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.
Reliability Derating:
The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that
are temperature accelerated.
AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts
AfT = Acceleration factor due to Temperature
tu = Time at use temperature (e.g. 55°C)
ts = Time at stress temperature (e.g. 125°C)
k = Boltzmann's Constant (8.617 x 10-5 eV/°K)
Tu = Temperature at Use (°K)
Ts = Temperature at Stress (°K)
Ea = Activation Energy (e.g. 0.7 ev)
The activation energy of the failure mechanism is derived from either internal studies or industry
accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms
or their activation energies are unknown. All deratings will be done from the stress ambient
temperature to the use ambient temperature.
An exponential model will be used to determine the acceleration factor for failure mechanisms,
which are voltage accelerated.
AfV = exp(B*(Vs - Vu))
AfV = Acceleration factor due to Voltage
Vs = Stress Voltage (e.g. 7.0 volts)
Vu = Maximum Operating Voltage (e.g. 5.5 volts)
B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.)
The Constant, B, related to the failure mechanism is derived from either internal studies or industry
accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are
unknown. All deratings will be done from the stress voltage to the maximum operating voltage.
Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the
60% or 90% confidence level (Cf).
In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing
product will continue to meet Maxim's quality and reliability standards. The current status of the
reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html.
The failure rate, Fr, is related to the acceleration during life test by:
Fr = X/(ts * AfV * AfT * N * 2)
X = Chi-Sq statistical upper limit
N = Life test sample size
The calculated failure rate for this device/process is:
The parameters used to calculate this failure rate are as follows:
Cf: 60%
Ea: 0.7
B: 0
Tu: 25
Vu: 5.5
°C
Volts
The reliability data follows. A the start of this data is the device information. The next section is the
detailed reliability data for each stress. The reliability data section includes the latest data available
and may contain some generic data.
Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate
is related to MTTF by:
MTTF = 1/Fr
NOTE: MTTF is frequently used interchangeably with MTBF.
FITS: 12.6
MTTF (YRS): 9048
FAILURE RATE:
Device Information:
Process:
8"-D6H-2P2M,HPVt,TCN1 ALOCOS:GOI
Number of Transistors:
172615
Passivation:
Passivation w/OxyNitride-Nov. 4% PSG
Die Size:
293 x 311
Interconnect:
Aluminum / 1% Silicon / 0.5% Copper
Gate Oxide Thickness:
150 Å
ELECTRICAL CHARACTERIZATION
DESCRIPTION
READPOINT
CONDITION
QUANTITY
FAILS
DATE CODE
1
EOS/ESD S5.1 HBM 500 VOLTS
3
0
ESD SENSITIVITY
PUL'S
0336
1
EOS/ESD S5.1 HBM 1000 VOLTS
3
0
ESD SENSITIVITY
PUL'S
0336
1
EOS/ESD S5.1 HBM 2000 VOLTS
3
0
ESD SENSITIVITY
PUL'S
0336
1
EOS/ESD S5.1 HBM 4000 VOLTS
3
0
ESD SENSITIVITY
PUL'S
0336
1
EOS/ESD S5.1 HBM 8000 VOLTS
3
3
ESD SENSITIVITY
PUL'S
0336
JESD78, I-TEST 125C
6
0
LATCH-UP
0336
JESD78, Vsupply TEST 125C
6
0
LATCH-UP
0336
3
Total:
OPERATING LIFE
DESCRIPTION
READPOINT
CONDITION
QUANTITY
FAILS
DATE CODE
1000
125C, 5.25 VOLTS
77
0
HIGH TEMP OP LIFE
HRS
0336
0
Total:
TEMPERATURE CYCLE
DESCRIPTION
READPOINT
CONDITION
QUANTITY
FAILS
DATE CODE
1000
-55C TO 125C
77
0
TEMP CYCLE
CYS
0336
0
Total:
TEMPERATURE HUMIDITY BIAS
DESCRIPTION
READPOINT
CONDITION
QUANTITY
FAILS
DATE CODE
96
130C, 85%R.H.,3.5V
77
0
HAST
HRS
0336
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