c
2004
cosmo
ELECTRONICS CORPORATION
http://www.cosmo-ic.com
68
1. Anode/ Cathode
2. Anode/ Cathode
3. Emitter
4. Collector
Features
1. A
C
inputs.
2. Opaque type, mini-flat package.
3. Subminiature type (The volume is smaller than that of our
conventional DIP type by as far as 30%)
4. Isolation voltage between input and output
(Viso:3750Vrms).
Applications
1. Hybrid substrates that reguire high density mounting.
2. Programmable controllers.
Absolute Maximum Ratings
(Ta=25
°
C)
Electro-optical Characteristics
(Ta=25
°
C)
UL 1577 (File No.E169586)
TOLERANCE :+ 0.2mm
t=0.254+0.05mm
Schematic : Top View
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
± 50
mA
Peak forward current
I
FM
± 1
A
Power dissipation
P
70
mW
Output
Collector-emitter voltage
V
CEO
60
V
Emitter-collector voltage
V
ECO
5
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Total power dissipation
Ptot
170
mW
Isolation voltage 1 minute
Viso
3750
Vrms
Operating temperature
Topr
-30 to +100
°C
Storage temperature
Tstg
-40 to +125
°C
Soldering temperature 10 second
Tsol
260
°C
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
=± 20mA
--
1.2
1.4
V
Terminal capacitance
Ct
V =0, f=1kHz
--
30
250
pF
Output
Collector dark current
I
CEO
V
CE
=20V, I
F
=0
--
--
0.1
uA
Collector-emitter breakdown voltage
BV
CEO
I
C
=0.1mA, I
F
=0
60
--
--
V
Emitter- collector breakdown voltage
BV
ECO
I
E
=100uA, I
F
=0
5
--
--
V
Transfer
Current transfer ratio
C
TR
I
F
=± 1mA, V
CE
=5V
20
400
%
charac-
Collector-emitter saturation voltage
V
CE
(sat)
I
F
=± 20mA, I
C
=1mA
--
0.1
0.3
V
teristics
Isolation resistance
Riso
DC500V,40 to 60%RH
5X10
10
10
11
--
ohm
Floating capacitance
Cf
V =0, f =1MH
Z
--
0.6
1.0
pF
Respone time (Rise)
tr
V
CE
=2V, I
C
=2mA, R
L
=100ohm
--
4
18
us
Respone time (Fall)
tf
--
3
18
us
Outside Dimension : Unit
(mm)
KPC354NT
Mini-flat package AC
Input type Photo Coupler
Classification table of current transfor ratio is
shown below.
V
Fig.2 Diode Power Dissipation vs.
Ambient Temperature
Ambient Temperature Ta (
°
C)
Diode power dissipation P (mW)
Fig.1 Forward Current vs. Ambient
Temperature
Ambient Temperature Ta (
°
C)
Forward Current I
F
(mA)
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
Ambient Temperature Ta (
°
C)
Collector power dissipation Pc (mW)
Fig.5 Peak Forward Current vs. Duty
Ratio
Duty ratio
Peak Forward Current I
FM
(mA)
Fig.6 Forward Current vs. Forward
Voltage
Forward voltage V
F
(V)
Forward Current I
F
(mA)
Fig.8 Collector Current vs. Collector-
emitter Voltage
Collector-emitter Voltage V
CE
(V)
Collector Current Ic (mA)
Fig.9 Relative Current Transfer Ratio
vs. Ambient Temperature
Ambient Temperature Ta (
°
C)
Relative current transfer ratio (%)
Fig.11 Collector Dark Current vs.
Ambient Temperature
Ambient Temperature Ta (
°
C)
Collector dark current I
CEO
(A)
Fig.4 Total Power Dissipation vs.
Ambient Temperature
Ambient Temperature Ta (
°
C)
T
otal power dissipation Pc (mW)
Fig.7 Current Transfer Ratio vs.
Forward Current
Forward Current I
F
(mA)
Current transfer ratio CTR (%)
Fig.10 Collector-emitter Saturation
Voltage vs. Ambient Temperature
Ambient Temperature Ta (
°
C)
Collector-emitter saturation V
o
ltage V
CE
(SA
T
)
(V)
Fig.12 Response Time vs. Load
Resistance
Load resistance R
L
(K ohm)
Response T
i
me (us)
KPC354NT
c
2004
cosmo
ELECTRONICS CORPORATION
http://www.cosmo-ic.com
69
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