SmartRF
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CC1050
Chipcon AS SmartRF
CC1050 PRELIMINARY Datasheet (rev. 1.0) 2002-02-25
Page 1 of 39
CC1050
Single Chip Very Low Power RF Transmitter
Applications
· Very low power UHF wireless data
transmitters
· 315 / 433 / 868 and 915 MHz ISM/SRD
band systems
· RKE Remote Keyless Entry
· Home automation
· Wireless alarm and security systems
· AMR Automatic Meter Reading
· Low power telemetry
· Toys
Product Description
CC1050
is a true single-chip UHF trans-
mitter designed for very low power and
very low voltage wireless applications. The
circuit is mainly intended for the ISM
(Industrial, Scientific and Medical) and
SRD (Short Range Device) frequency
bands at 315, 433, 868 and 915 MHz, but
can easily be programmed for operation at
other frequencies in the 300-1000 MHz
range.
The main operating parameters of
CC1050
can be programmed via an easy-to-
interface serial bus, thus making
CC1050
a
very flexible and easy to use transmitter.
In a typical system
CC1050
will be used
together with a microcontroller and a few
external passive components.
CC1050
is based on Chipcon's SmartRF
technology in 0.35
µm CMOS.
Features
· True single chip UHF RF transmitter
· Very low current consumption
· Frequency range 300 1000 MHz
· Programmable output power 20 to
12 dBm
· Small size (TSSOP-24 package)
· Low supply voltage (2.1 V to 3.6 V)
· Very few external components required
· Single-ended antenna connection
· FSK data rate up to 76.8 kBaud
· Complies with EN 300 220 and FCC
CFR47 part 15
· FSK modulation spectrum shaping
· Programmable frequency in 250 Hz
steps makes crystal temperature drift
compensation possible without TCXO
· Suitable for frequency hopping
protocols
· Development Kit available
· Easy-to-use software for generating the
CC1050
configuration data
This document contains information on a pre-production product. Specifications and information herein are subject to
change without notice.
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CC1050
Chipcon AS SmartRF
CC1050 PRELIMINARY Datasheet (rev. 1.0) 2002-02-25
Page 2 of 39
Pin Assignment
Pin no.
Pin name
Pin type
Description
1
AVDD
Power (A)
Power supply (3 V) for analog modules (PA)
2
AGND
Ground (A)
Ground connection (0 V) for analog modules (PA)
3
AGND
Ground (A)
Ground connection (0 V) for analog modules (PA)
4
AGND
Ground (A)
Ground connection (0 V) for analog modules (VCO and prescaler)
5
L1
Analog input
Connection no 1 for external VCO tank inductor
6
L2
Analog input
Connection no 2 for external VCO tank inductor
7
AVDD
Power (A)
Power supply (3 V) for analog modules (VCO and prescaler)
8
CHP_OUT
Analog output
Charge pump current output when external loop filter is used
The pin can also be used as PLL Lock indicator. Output is high
when PLL is in lock.
9 R_BIAS
Analog
output Connection for external precision bias resistor (82 k, ± 1%)
10
AGND
Ground (A)
Ground connection (0 V) for analog modules (backplane)
11
AVDD
Power (A)
Power supply (3 V) for analog modules (general)
12
AGND
Ground (A)
Ground connection (0 V) for analog modules (general)
13
XOSC_Q2
Analog output
Crystal, pin 2
14
XOSC_Q1
Analog input
Crystal, pin 1, or external clock input
15
AGND
Ground (A)
Ground connection (0 V) for analog modules (guard)
16
DGND
Ground (D)
Ground connection (0 V) for digital modules (substrate)
17
DVDD
Power (D)
Power supply (3 V) for digital modules
18
DGND
Ground (D)
Ground connection (0 V) for digital modules
19
DI
Digital input
Data input in transmit mode
20
DCLK
Digital output
Clock for data in transmit mode
21
PCLK
Digital input
Programming clock for 3-wire bus
22 PDATA
Digital
input/output
Programming data for 3-wire bus. Programming data input for
write operation, programming data output for read operation
23
PALE
Digital input
Programming address latch enable for 3-wire bus
24
RF_OUT
RF output
RF signal output to antenna
A=Analog, D=Digital
(Top View)
AGND
AGND
AGND
L1
L2
AVDD
AGND
CC10
5
0
1
2
3
5
4
6
7
8
10
11
12
9
PALE
PDATA
PCLK
DCLK
DI
DGND
DVDD
DGND
AGND
XOSC_Q1
AGND
XOSC_Q2
24
23
22
20
21
19
18
17
15
14
13
16
RF_OUT
AVDD
CHP_OUT
R_BIAS
AVDD
AGND
AGND
AGND
L1
L2
AVDD
AGND
CC10
5
0
1
2
3
5
4
6
7
8
10
11
12
9
PALE
PDATA
PCLK
DCLK
DI
DGND
DVDD
DGND
AGND
XOSC_Q1
AGND
XOSC_Q2
24
23
22
20
21
19
18
17
15
14
13
16
RF_OUT
AVDD
CHP_OUT
R_BIAS
AVDD
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CC1050
Chipcon AS SmartRF
CC1050 PRELIMINARY Datasheet (rev. 1.0) 2002-02-25
Page 3 of 39
Absolute Maximum Ratings
Parameter
Min.
Max.
Units
Condition
Supply voltage, VDD
-0.3
5.0
V
Voltage on any pin
-0.3
VDD+0.3,
max 5.0
V
Input RF level
10
dBm
Storage temperature range
-50
150
°C
Operating ambient temperature
range
-40 85
°C
Lead temperature
260
°C
T = 10 s
Under no circumstances the absolute
maximum ratings given above should be
violated. Stress exceeding one or more of
the limiting values may cause permanent
damage to the device.
Caution! ESD sensitive device.
Precaution should be used when handling
the device in order to prevent permanent
damage.
Electrical Specifications
Tc = 25
°C, VDD = 3.0 V if nothing else stated
Parameter
Min.
Typ.
Max.
Unit Condition / Note
Overall
RF Frequency Range
300
1000
MHz
Programmable in steps of 250 Hz
Transmit Section
Transmit data rate
0.6
76.8
kBaud NRZ or Manchester encoding.
76.8 kBaud equals 76.8 kbit/s
using NRZ coding. See page 13.
Binary FSK frequency separation
0
65
kHz
The frequency corresponding to
the digital "0" is denoted f
0
, while
f
1
corresponds to a digital "1".
The frequency separation is f
1
-f
0
.
The RF carrier frequency, f
c
, is
then given by f
c
=(f
0
+f
1
)/2.
(The frequency deviation is given
by f
d
=+/-(f
1
-f
0
)/2 )
The frequency separation is
programmable in 250 Hz steps.
65 kHz is the minimum
guaranteed separation at 1 MHz
reference frequency. Larger
separations can be achieved at
higher reference frequencies.
Output power
433 MHz
868 MHz
-20
-20
12
8
dBm
Delivered to 50
load.
The output power is
programmable.
RF output impedance
433/868 MHz
110
/
70
Transmit mode. For matching
details see p.22.
Spurious emission
-36
dBm
Complies with EN 300 220
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CC1050
Chipcon AS SmartRF
CC1050 PRELIMINARY Datasheet (rev. 1.0) 2002-02-25
Page 4 of 39
Parameter
Min.
Typ.
Max.
Unit Condition / Note
Harmonics
-20
dBc
An external LC should be used to
reduce harmonics emission to
comply with SRD requirements.
See p.26.
Frequency Synthesiser
Section
Crystal Oscillator Frequency
3
16
MHz
Crystal frequency can be 3-4, 6-8
or 9-16 MHz. Recommended
frequencies are 3.6864, 7.3728,
11.0592 and 14.7456. See page
24 for details.
Crystal frequency accuracy
requirement
± 50
± 25
ppm
433
MHz
868 MHz
The crystal frequency accuracy
and drift (ageing and
temperature dependency) will
determine the frequency
accuracy of the transmitted
signal.
Crystal operation
Parallel
C3 and C4 are loading
capacitors, see page 24
Crystal load capacitance
12
12
12
22
16
16
30
30
16
pF
pF
pF
3-8 MHz, 22 pF recommended
6-8 MHz, 16 pF recommended
9-16 MHz, 16 pF recommended
Crystal oscillator start-up time
4
1.5
2
ms
ms
ms
3.6864 MHz, 16 pF load
7.3728 MHz, 16 pF load
16 MHz, 16 pF load
Output signal phase noise
-80
dBc/Hz At 100 kHz offset from carrier
PLL lock time
200 µs
Up to 1 MHz frequency step
PLL turn-on time, crystal oscillator
on in power down mode
250 µs
Crystal oscillator running
Digital Inputs/Outputs
Logic "0" input voltage
0
0.3*VDD
V
Logic "1" input voltage
0.7*VDD VDD V
Logic "0" output voltage
0
0.4
V
Output current -2.5 mA,
3.0 V supply voltage
Logic "1" output voltage
2.5
VDD
V
Output current 2.5 mA,
3.0 V supply voltage
Logic "0" input current
NA -1
µA
Input signal equals GND
Logic "1" input current
NA 1 µA
Input signal equals VDD
DI setup time
20
ns
TX mode, minimum time DI must
be ready before the positive edge
of DCLK
DI hold time
10
ns
TX mode, minimum time DI must
be held after the positive edge of
DCLK
Serial interface (PCLK, PDATA and
PALE) timing specification
See Table 2 page 11
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CC1050
Chipcon AS SmartRF
CC1050 PRELIMINARY Datasheet (rev. 1.0) 2002-02-25
Page 5 of 39
Parameter
Min.
Typ.
Max.
Unit Condition / Note
Power Supply
Supply voltage
2.1
3.0
3.6
V
V
Recommended operation voltage
Operating limits
Power Down mode
0.2 1 µA
Oscillator core off
Current Consumption,
transmit mode 433/868 MHz:
P=0.01mW (-20dBm)
P=0.3mW (-5dBm)
P=1mW (0dBm)
P=3mW (5dBm)
P=6mW (8dBm)
P=16mW (12dBm)
5.5/8.0
7.3/10.0
9.1/14.2
13.3/17.7
15.9/24.9
23.3/NA
mA
mA
mA
mA
mA
mA
The output power is delivered to
a 50
load
Current Consumption, crystal osc.
Current Consumption, crystal osc.
and bias
Current Consumption, crystal osc.,
bias and synthesiser
30
80
105
400
4.0
5.5
µA
µA
mA
mA
3-8 MHz, 16 pF load
9-14 MHz, 12 pF load
14-16 MHz, 16 pF load
< 500 MHz
> 500 MHz
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