MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10ms
IFSM
750
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
JA
500
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100µµA
40
50
V
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
0.37
0.42
V
VF
IF=100mA
0.61
0.80
V
VF
IF=200mA
0.65
1.0
V
IR
VR=25V
90
500
nA
IR
VR=25V, TA=100°C
25
100
µA
CT
VR=1.0V, f=1.0 MHz
7.0
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CMSSH-3E
CMSSH-3AE
CMSSH-3CE
CMSSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT, SUPERminiTM
SILICON SCHOTTKY DIODES
SOT-323 CASE
Central
Semiconductor Corp.
TM
R1 (4-February 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSSH-3E
Series types are Enhanced Versions of the
CMSSH-3 Series of Silicon Schottky Diodes in an
SOT-323 Surface Mount Package.
Enhanced specification.
Additional Enhanced specification.
CMSSH-3E:
SINGLE
MARKING CODE: 31E
CMSSH-3AE:
DUAL, COMMON ANODE
MARKING CODE: 3AE
CMSSH-3CE:
DUAL, COMMON CATHODE
MARKING CODE: 3CE
CMSSH-3SE:
DUAL, IN SERIES
MARKING CODE: 3SE
FEATURED ENHANCED SPECIFICATIONS:
I
F
from 100mA max to 200mA max.
B
VR
from 30V min to 40V min.
V
F
from 1.0V max to 0.8V max.
Central
Semiconductor Corp.
TM
CMSSH-3E
CMSSH-3AE
CMSSH-3CE
CMSSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT, SUPERminiTM
SILICON SCHOTTKY DIODES
R1 (4-February 2004)
2
1
3
CMSSH-3E
CMSSH-3AE
CMSSH-3CE
CMSSH-3SE
1) Anode
1) Cathode D2
1) Anode D2
1) Anode D2
2) No Connection
2) Cathode D1
2) Anode D1
2) Cathode D1
3) Cathode
3) Anode D1, D2
3) Cathode D1, D2
3) Anode D1, Cathode D2
MARKING CODE:
MARKING CODE:
MARKING CODE:
MARKING CODE:
31E 3AE
3CE
3SE
SOT-323 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
1
3
2
D1
D2
1
3
2
D1
D2
1
3
2
D1
D2
PDF 
ZIP