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Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
BAS28
DUAL, ISOLATED HIGH SPEED
SWITCHING DIODE
SOT-143 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS28
type is a ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high speed switching applications.
Marking code is A61.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
85
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
250
mA
Forward Surge Current, tp=1
µ
sec.
IFSM
4000
mA
Forward Surge Current, tp=1 msec.
IFSM
2000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
IR
VR=25V, TA=150
o
C
30
µ
A
IR
VR=75V
1.0
µ
A
IR
VR=75V, TA=150
o
C
50
µ
A
VF
IF=1.0mA
0.715
V
VF
IF=10mA
0.855
V
VF
IF=50mA
1.000
V
VF
IF=150mA
1.250
V
CT
VR=0, f=1 MHz
2.0
pF
trr
IF=IR=10mA, RL=100
, Rec. to 1.0mA
6.0
ns
Qs
IF=10mA, VR=5.0V, RL=500
45
pC
VFR
IF=10mA, tr=20ns
1.75
V
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