CDI
MINIMUM
MAXIMUM
MAXIMUM
MAXIMUM REVERSE
MAXIMUM
FIGURE
TYPE
BREAKDOWN FORWARD
FORWARD
LEAKAGE CURRENT
CAPACITANCE @
NUMBER
VOLTAGE
VOLTAGE
VOLTAGE
V
R
= 0 VOLTS
NUMBER
(2)
f = 1.0 MH
Z
V
BR
@ 10
µ
A
VF @ 1 mA
VF @ IF
1R @ VR
CT
VOLTS
VOLTS
VOLTS @ mA
nA
VOLTS
PICO FARADS
CD2810
20
0.41
1.0 @ 35
100
15
1.2
1
CD5711
70
0.41
1.0 @15
200
50
2.0
2
CD5712
20
0.41
1.0 @ 35
150
16
1.2
1
CD6857
20
0.35
0.75 @ 35
150
16
4.5
2
CD6858
70
0.36
0.65 @ 15
200
50
4.5
2
0.27 @ 0.1
100
1
CD6916
40
0.34
0.34 @ 1.0
200
20
5
2
(2)
0.47 @ 10.0
500
40
NOTES:
(1) Effective Minority Carrier Lifetime (
) is 100 Pico Seconds
(2) CD6916
V
BR
measured @ 500 nanoamps
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -65°C to +150°C
· 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444
· 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445
· SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION
· SILICON DIOXIDE PASSIVATED
· COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
DESIGN DATA
METALLIZATION:
Top: (Anode)...................... ..Al
Back: (Cathode)................. Au
o
AL THICKNESS.................25,000 A Min
o
GOLD THICKNESS... ..........4,000 A Min
CHIP THICKNESS............. .........10 Mils
TOLERANCES: ALL Dimensions
+ 2 mils, Except Anode Pad Where
Tolerance is + 0.5 mils.
BACKSIDE IS CATHODE
FIGURE 2
BACKSIDE IS CATHODE
FIGURE 1
CD2810
CD5711
CD5712
CD6857
CD6858
CD6916
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
15
MILS
5.5
MILS
15
MILS
3
MILS
CD2810, CD5711, CD5712, CD6857, CD6858
and CD6916
0
.2
.4
.6
.8
1.0
1.2
VF FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical Forward
Voltage Variation with Temperature for the
CD5712 and CD2810 Schottky Diodes.
0
.2
.4
.6
.8
1.0
1.2
VF FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical Forward Voltage
Variation with Temperature for Schottky Diode
CD5711.
0
5.0
10
15
20
25
30
VR REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
CD5712 and CD2810
Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
0
10
20
30
40
50
60
VR REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CD5711 Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
.1
1.0
10
100
IF FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical DynamiC Resistance (RD) vs.
Forward Current (IF).
I F
FOR
W
ARD
CURRENT
(mA)
I F
FOR
W
ARD
CURRENT
(mA)
I R
REVERSE
CURRENT
(nA)
I R
REVERSE
CURRENT
(nA)
R
D
DYNAMIC
RESIST
ANCE
(!!)
100
10
1.0
.1
.01
100,000
10,000
1000
100
10
1
50
10
5
1
.5
.1
.05
.01
1000
100
10
1
10,000
1000
100
10
1.0
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