Continental Device India Limited
Data Sheet
Page 1 of 3
TIP29, 29A, 29B, 29C
NPN PLASTIC POWER TRANSISTORS
TIP30, 30A, 30B, 30C
PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
29 29A 29B 29C
30 30A 30B 30C
Collector-base voltage (open emitter)
V
CBO
max. 40
60
80
100
V
Collector-emitter voltage (open base)
V
CEO
max. 40
60
80
100
V
Collector current
I
C
max.
1.0
A
Total power dissipation up to T
C
= 25°C P
tot
max.
30
W
Junction temperature
T
j
max.
150
°C
Collector-emitter saturation voltage
I
C
= 1 A; I
B
= 125 mA
V
CEsat
max.
0.7
V
D.C. current gain
I
C
= 1 A; V
CE
= 4 V
h
FE
min.
15
max.
75
RATINGS (at T
A
=25°C unless otherwise specified)
Limiting values
29 29A 29B 29C
30 30A 30B 30C
Collector-base voltage (open emitter)
V
CBO
max. 40
60
80
100
V
Collector-emitter voltage (open base)
V
CEO
max. 40
60
80
100
V
TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 2
3
J
M
G
D
H
A
O
O
K
N
L
F
E
C
D IM
M IN .
M A X.
A
l
l
di
m
i
ns
i
ons
i
n
m
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D
0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J
0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
O
D E G 7
1
2
3
4
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
http://www.bocasemi.com page: 1
Boca Semiconductor Corp. BSC
Continental Device India Limited
Data Sheet
Page 2 of 3
Emitter-base voltage (open collector)
V
EBO
max.
5.0
V
Collector current
I
C
max.
1.0
A
Collector current (Peak)
I
CM
max.
3.0
A
Base current
I
B
max.
0.4
A
Total power dissipation upto T
C
=25°C
P
tot
max.
30
W
Derate above 25°C
max.
0.24
W/°C
Total power dissipation upto T
A
=25°C
P
tot
max.
2
W
Derate above 25°C
max.
0.016
W/°C
Junction temperature
T
j
max.
150
°C
Storage temperature
T
stg
65 to +150
ºC
THERMAL RESISTANCE
From junction to ambient
R
th ja
62.5
°C/W
From junction to case
R
th jc
4.167
°C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
29
29A 29B 29C
30
30A 30B 30C
Collector cutoff current
I
B
= 0; V
CE
= 30V
I
CEO
max. 0.3 0.3
mA
I
B
= 0; V
CE
= 60V
I
CEO
max.
0.3
0.3
mA
V
EB
= 0; V
CE
= V
CEO
I
CES
max.
0.2
mA
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
EBO
max.
1.0
mA
Breakdown voltages
I
C
= 30 mA; I
B
= 0
V
CEO(sus)
* min. 40
60
80
100
V
I
C
= 1 mA; I
E
= 0
V
CBO
min. 40
60
80
100
V
I
E
= 1 mA; I
C
= 0
V
EBO
min.
5.0
V
Saturation voltages
I
C
= 1 A; I
B
= 125 mA
V
CEsat
*
max.
0.7
V
Base emitter on voltage
I
C
= 1 A; V
CE
= 4 V
V
BE(on)
*
max.
1.3
V
D.C. current gain
I
C
= 0.2 A; V
CE
= 4 V
h
FE
*
min.
40
I
C
= 1 A; V
CE
= 4 V
h
FE
*
min.
15
max.
75
Small-signal current gain
I
C
= 0.2A; V
CE
= 10V; f = 1 KHz
h
fe
min.
20
Transition frequency
I
C
= 0.2A; V
CE
= 10V; f = 1 MHz
f
T
(2)
min.
3
MHz
* Pulse test: pulse width
300 µs; duty cycle
2%.
(2) f
T
= |h
fe
|· f
test
.
TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C
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