KSD-2076-000
1
SDT12SF
TVS Diode
Features
·
Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact )
·
Small package for use in portable electronics
·
Low operating and clamping voltage
Applications
·
Cellular Handsets and Accessories
·
Microprocessor based equipment
·
Notebooks, Desktops and Servers
Ordering
Information
Type NO.
Marking
Package Code
SDT12SF
S12
SOT-23F
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Cathode
2. Cathode
3. Anode
0.
4
±
0.
0
5
0~
0.
1
3
1
2
1.
9
0
B
S
C
2.
9
±
0.
1
0.
1
5
±
0.
05
2.4
±
0.1
0.
9
±
0.
1
1.6
±
0.1
1
2
3
KSD-2076-000
2
SDT12SF
Absolute maximum ratings
Ta=25
°
C
Characteristic
Symbol
Ratings
Unit
Peak pulse power ( tp = 8/20 )
P
PK
300
W
Peak pulse current (tp = 8/20 )
I
PP
12
A
Lead soldering temperature
T
L
260 (10sec. )
°
C
Operating temperature
T
J
-55 ~ 125
°
C
Storage temperature
T
stg
-55 ~ 150
°
C
Electrical Characteristics
Ta=25
°
°
°
°
C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Reverse stand-off voltage
V
RWM
12
V
Reverse breakdown voltage
V
BR
I
t
=1mA
13.3
V
Reverse leakage current
I
R
V
RWM
=12V , T=25
1
Clamping voltage
V
C
I
PP
=1A, tp=8/20
19
V
Junction capacitance
C
J
Pin 1 to 2
V
R
=0V, f=1MHz
120
pF
Junction capacitance
C
J
Pin 1 to 3 and Pin 2 to 3
V
R
=0V, f=1MHz
150
pF
KSD-2076-000
3
SDT12SF
Electrical Characteristics Curves
Fig. 2 None-repetitive peak pulse power vs pulse time
Fig. 1 Power derating curve
Fig. 3 Pulse Waveform
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