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Part Number MH1242

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MH1RT QualPack

Rev.2 ­ Jan. 2002
1
Qualification Package
MH1RT Sea of Gates
Radiation Tolerant 0.35 µm CMOS












MH1RT Sea of Gates
0.35 µm CMOS for Space Environment
QualPack
MH1RT QualPack

2
Rev. 2 ­ Jan 2002
1. Table of Contents
1.
Table of Contents ................................................................................................................................................ 2
2.
General Information ........................................................................................................................................... 3
3.
Technology Information .................................................................................................................................... 4
3.1
Wafer Process Technology ........................................................................................................................ 4
3.2
Product Design ........................................................................................................................................... 5
3.3
Cross Section............................................................................................................................................... 6
4.
Qualification........................................................................................................................................................ 7
4.1
Qualification methodology ........................................................................................................................ 7
4.2
Qualification test methods......................................................................................................................... 8
4.3
Wafer Process Qualification...................................................................................................................... 9
4.3.1
Wafer Level Reliability....................................................................................................................... 9
4.3.2
Hot carrier qualification ....................................................................................................................... 9
4.3.3
Electromigration................................................................................................................................. 10
4.3.4
Product Reliability Results................................................................................................................. 12
4.4
Product Qualification............................................................................................................................... 13
4.4.1
Device reliability................................................................................................................................ 13
4.4.2
Packaging Reliability ......................................................................................................................... 14
4.5
Qualification status: ................................................................................................................................. 14
4.6
Irradiation................................................................................................................................................. 15
4.6.1
Conditions and Chronology ............................................................................................................... 15
4.6.2
Results................................................................................................................................................ 16
4.6.3
Irradiation summary ........................................................................................................................... 16
4.6.4
Irradiation test records........................................................................................................................ 17
5.
Environmental Information.............................................................................................................................. 20
6.
Other Data ......................................................................................................................................................... 21
6.1
ISO9001 and QS900 Certificates ............................................................................................................ 21
6.2
Data Book Reference................................................................................................................................ 22
MH1RT QualPack

Rev.2 ­ Jan. 2002
3
2. General Information

Product Name:
MH1RT
Function:
ASIC Sea of Gates
1.6 million gates, 596 pins
200 KRAD Total Dose capability

Wafer Process:
CMOS 0.35
µ
m Rad Tolerant, 4 metal levels

Available Package Types
PQFP, PowerQuad, L/TQFP,PLCC, PBGA, Super PBGA
CPGA,CQFP, MQFPF, CLGA

Other Forms: Die, Wafer


Locations:
Process Development
Atmel Rousset, France
Atmel Nantes, France
Product Development
Atmel Nantes, France
Wafer Plant
Atmel Rousset, France
QC Responsibility
Atmel Nantes, France
Probe Test
Atmel Nantes, France
Assembly
Atmel Grenoble, France (except plastic)
Final Test
Atmel Nantes, France
Lot Release
Atmel Nantes, France
Shipment Control
Atmel Nantes, France
Quality Assurance
Atmel Nantes, France
Reliability Testing
Atmel Nantes, France
Failure Analysis
Atmel Nantes, France




Quality Management
Atmel Nantes, France


Signed: Pascal LECUYER
MH1RT QualPack

4
Rev. 2 ­ Jan 2002
3. Technology Information
3.1 Wafer Process Technology

Process Type (Name):
CMOS 0.35
µ
m Rad Tolerant

Base Material:
Silicon Epi Substrate
Wafer Thickness (without back grinding) 725
µ
m
Wafer Diameter
200mm

Number Of Masks
15

Gate Oxide
Material
Silicon Dioxide
Thickness
70A (optical for 3.3V)

Polysilicon
Number of Layers
1
Thickness
3200A

Metal
Number of Layers
up to 4
Material:
Ti TiN AlCu
Layer 1/3 Thickness
400A + 800A + 5000A + 100A Ti + 1000A TiN
Upper layer Thickness
400A + 800A + 8000A + 250A TiN

Passivation
Material
SiO2/Si3N4
Thickness
11000A / 10000A
MH1RT QualPack

Rev.2 ­ Jan. 2002
5
3.2 Product Design

Pad size opening
80
µ
m * 100
µ
m
Logic Effective Channel Length
0.35
µ
m

Gate Poly Width
0.35
µ
m
Gate Poly Spacing
0.49
µ
m

Metal 1 Width
0.42
µ
m
Metal 1 Spacing
0.49
µ
m
Metal 2 Width
0.56
µ
m
Metal 2 Spacing
0.49
µ
m
Metal 3 Width
0.56
µ
m
Metal 3 Spacing
0.49
µ
m
Metal 4 Width
0.56
µ
m
Metal 4 Spacing
0.49
µ
m

Contact Size
0.35
µ
m
Contact Spacing
0.49
µ
m

Via 1 Size
0.42
µ
m
Via 2 Size
0.42
µ
m

Test Vehicles:

Die Size:
5280*8130 (42.9mm²)
Pad Size
80
µ
m * 100
µ
m
Code:
EV29
Mask:
A5500
Number of metal levels:
3

Die Size:
13097*13097 (169.78mm²)
Pad Size
80
µ
m * 100
µ
m
Code:
DRAF (MH242S)
Mask:
A5544
Number of metal levels:
4

Die Size:
6601*6601 (30.9mm²)
Pad Size
90
µ
m * 90
µ
m
Code:
65809E
Mask:
A5552
Number of metal levels:
3