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Part Number LP62E16128A-T

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LP62E16128A-T Series
128K X 16 BIT LOW VOLTAGE CMOS SRAM
(December, 2003, Version 1.3)
1
AMIC Technology, Corp.
Document Title
128K X 16 BIT LOW VOLTAGE CMOS SRAM
Revision History
Rev. No. History Issue
Date Remark
1.3
Change VCC from 1.8V~2.2V to 1.65V~2.2V
December 9, 2003
Final
I
SB
spec. delete

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LP62E16128A-T Series
128K X 16 BIT LOW VOLTAGE CMOS SRAM
(December, 2003, Version 1.3)
2
AMIC Technology, Corp.
Features
Operating voltage: 1.65V to 2.2V
Access times: 70 ns (max.)
Current:
Very low power version: Operating: 25mA (max.)
Standby:
10
µ
A (max.)
Full static operation, no clock or refreshing required
All inputs and outputs are directly TTL-compatible
Common I/O using three-state output
Data retention voltage: 1.2V (min.)
Available in 44-pin TSOP and 48-ball CSP (6 x 8mm)
packages
General Description
The LP62E16128A-T is a low operating current
2,097,152-bit static random access memory organized as
131,072 words by 16 bits and operates on low power
voltage from 1.65V to 2.2V. It is built using AMIC's high
performance CMOS process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
The chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output
enable input are included for easy interfacing.
Data retention is guaranteed at a power supply voltage as
low as 1.2V.

Pin Configurations
TSOP
CSP (Chip Size Package)
48-pin Top View
I/O
9
I/O
10
GND
VCC
I/O
15
I/O
16
NC
A8
NC
A9
A12
A10
A11
NC
A13
A14
A15
I/O
8
I/O
7
I/O
3
I/O
1
GND
VCC
A0
A3
A5
A6
A4
A1
A2
NC
6
5
4
3
2
1
A
B
C
D
E
F
G
H
I/O
14
I/O
13
I/O
12
I/O
11
NC
NC
A7
A16
I/O
2
I/O
4
I/O
5
I/O
6
LB
HB
WE
OE
CE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A3
A2
A1
A0
CE
I/O
1
I/O
2
I/O
3
I/O
4
VCC
GND
I/O
5
I/O
6
I/O
7
I/O
8
WE
A16
A15
A14
A13
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A11
A10
A9
A8
NC
I/O
9
I/O
10
I/O
11
I/O
12
VCC
GND
I/O
13
I/O
14
I/O
15
I/O
16
LB
HB
OE
A7
A6
LP62E16128AV-T
A12
A5
A4
NC
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LP62E16128A-T Series
(December, 2003, Version 1.3)
3
AMIC Technology, Corp.
Block Diagram
DECODER
1024 X 2048
MEMORY ARRAY
COLUMN I/O
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
VCC
GND
I/O
8
I/O
1
A16
A15
A0
WE
HB
INPUT
DATA
CIRCUIT
I/O
9
I/O
16
LB
OE
CE
Pin Descriptions -- TSOP
Pin No.
Symbol
Description
1 - 5, 18 - 22,
24 ­ 27, 42 - 44
A0 - A16
Address Inputs
6
CE
Chip Enable Input
7 - 10, 13 - 16,
29 - 32, 35 - 38
I/O
1
- I/O
16
Data
Inputs/Outputs
17
WE
Write Enable Input
39
LB
Lower Byte Enable Input (I/O
1
to I/O
8
)
40
HB
Higher Byte Enable Input (I/O
9
to I/O
16
)
41
OE
Output Enable Input
11, 33
VCC
Power
12, 34
GND
Ground
23, 28
NC
No Connection
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LP62E16128A-T Series
(December, 2003, Version 1.3)
4
AMIC Technology, Corp.
Pin Description - CSP
Symbol Description Symbol Description
A0 - A16
Address Inputs
HB
Higher Byte Enable Input
(I/O
9
- I/O
16
)
CE
Chip Enable
OE
Output Enable
I/O
1
- I/O
16
Data Input/Output
VCC
Power Supply
WE
Write Enable Input
GND
Ground
LB
Lower Byte Enable Input
(I/O
1
- I/O
8
)
NC No
Connection


Recommended DC Operating Conditions
(T
A
= -25
°
C to + 85
°
C)
Symbol Parameter Min.
Typ.
Max.
Unit
VCC Supply
Voltage
1.65
2
2.2
V
GND
Ground
0 0 0 V
V
IH
Input High Voltage
1.4
-
VCC + 0.2
V
V
IL
Input Low Voltage
-0.2
-
+0.4
V
C
L
Output
Load
-
-
30
pF
TTL Output
Load
-
-
1
-
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LP62E16128A-T Series
(December, 2003, Version 1.3)
5
AMIC Technology, Corp.
Absolute Maximum Ratings*

VCC to GND ............................................... -0.5V to +3.0V
IN, IN/OUT Volt to GND.....................-0.5V to VCC + 0.5V
Operating Temperature, Topr ....................-25
°
C to +85
°
C
Storage Temperature, Tstg...................... -55
°
C to +125
°
C
Power Dissipation, P
T
................................................0.7W

*Comments

Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(T
A
= -25
°
C to + 85
°
C, VCC = 1.65V to 2.2V, GND = 0V)
Symbol Parameter
LP62E16128A-70LLT
Unit Conditions
Min.
Max.
I
LI
Input Leakage Current
-
1
µ
A
V
IN
= GND to VCC
I
LO

Output Leakage Current
-
1
µ
A
CE = V
IH
or LB = V
IH
or
HB = V
IH
or OE = V
IH
or
WE = V
IH
V
I/O
= GND to VCC
I
CC
Active Power Supply Current
-
5
mA
CE = V
IL
, I
I/O
= 0mA
I
CC1
Dynamic Operating
- 25
mA
Min. Cycle, Duty = 100%
CE = V
IL
, I
I/O
= 0mA
I
CC2
Current
- 10
mA
CE = V
IL
, V
IH
= VCC,
V
IL
= 0V, f = 1MHz,
I
I/O
= 0 mA
I
SB1
Standby
Power
-
10
µ
A
CE
VCC - 0.2V,
V
IN
0V
V
OL
Output Low Voltage
-
0.2
V
I
OL
= 0.1 mA
V
OH
Output High Voltage
1.4
-
V
I
OH
= -0.1 mA