Document Outline
- List of Figures
- 1. Typical Power Gain vs. Frequency
- 2. Power Gain vs. Current
- 3. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature
- 4. Output Power at 1 dB Gain Compression and Noise Figure vs. Frequency
- Features
- Description
- Typical Biasing Configuration
- Chip Outline
- MSA-0900 Absolute Maximum Ratings
- Electrical Specifications
- Part Number Ordering Information
- MSA-0900 Typical Scattering Parameters
- Typical Performance
- MSA-0900 Bonding Diagram
- MSA-0900 Chip Dimensions
6-430
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Broadband, Minimum Ripple
Cascadable 50
Gain Block
· 8.0
±
0.2 dB Typical Gain
Flatness from 0.1 to 4.0 GHz
· 3 dB Bandwidth:
0.1 to 6.0 GHz
· Low VSWR:
1.5:1 from 0.1 to 4.0 GHz
· 11.5 dBm Typical P
1dB
at
1.0 GHz
MSA-0900
Chip Outline
[1]
Description
The MSA-0900 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for very wide bandwidth
industrial and military applica-
tions that require flat gain and low
VSWR.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400
°
C and either wedge
or ball bonding using 0.7 mil gold
wire.
This chip is intended to be used
with an external blocking capaci-
tor completing the shunt feedback
path (closed loop). Data sheet
characterization is given for a
45 pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.
[1]
Typical Biasing Configuration
Note:
1. Refer to the APPLICATIONS section
"Silicon MMIC Chip Use" for additional
information.
C
block
C
block
C
Fbl
R
bias
(Required)
V
CC
>
12 V
V
d
= 7.8 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
AK
5965-9548E
6-431
MSA-0900 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
80 mA
Power Dissipation
[2,3]
750 mW
RF Input Power
+13 dBm
Junction Temperature
200
°
C
Storage Temperature
65 to 200
°
C
Thermal Resistance
[2,4]
:
jc
= 70
°
C/W
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0900-GP4
100
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
8.0
G
P
Gain Flatness
[3]
f = 0.1 to 4.0 GHz
dB
±
0.2
f
3 dB
3 dB Bandwidth
[3,4]
GHz
6.0
Input VSWR
f = 1.0 to 4.0 GHz
1.4:1
Output VSWR
f = 1.0 to 4.0 GHz
1.5:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.0
f = 4.0 GHz
6.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
11.5
f = 4.0 GHz
6.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
t
D
Group Delay
f = 1.0 GHz
psec
60
V
d
Device Voltage
V
7.0
7.8
8.6
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
16.0
Notes:
1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The value is the expected achievable performance for the MSA-0900 used with an external 45 pF capacitor mounted in a
100 mil stripline package.
4. Referenced from 0.1 GHz gain (G
P
).
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 35 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
°
C.
3. Derate at 14 mW/
°
C for T
Mounting Surface
> 148
°
C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
jc
than do alternate methods.
6-432
MSA-0900 Typical Scattering Parameters
[1,2]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 35 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.02
.32
107
10.8
3.48
151
13.9
.203
17
.32
106
0.83
0.05
.22
143
8.6
2.70
164
13.6
.209
6
.22
142
1.09
0.1
.11
144
8.2
2.57
171
13.3
.215
3
.11
142
1.16
0.2
.10
160
8.1
2.54
172
13.5
.211
1
.10
158
1.19
0.4
.10
171
8.1
2.54
175
13.4
.215
2
.10
166
1.18
0.6
.09
170
8.1
2.55
166
13.3
.216
1
.10
166
1.18
0.8
.08
171
8.2
2.57
162
13.3
.216
1
.11
166
1.17
1.0
.08
170
8.3
2.59
158
13.1
.220
1
.11
167
1.15
1.5
.07
166
8.6
2.68
147
13.1
.221
1
.14
172
1.12
2.0
.07
138
8.9
2.80
136
12.6
.234
1
.15
172
1.07
2.5
.08
131
9.3
2.92
126
12.6
.236
1
.18
179
1.04
3.0
.12
119
9.6
3.01
112
12.0
.250
1
.21
171
0.99
3.5
.17
125
9.6
3.02
95
11.8
.256
1
.22
157
0.97
4.0
.22
132
9.1
2.86
78
11.5
.265
3
.19
144
0.96
4.5
.27
140
8.4
2.64
63
11.5
.265
5
.16
138
0.97
5.0
.32
149
7.5
2.36
50
11.4
.268
6
.12
138
1.00
5.5
.34
154
6.4
2.09
38
11.3
.272
6
.10
162
1.02
6.0
.36
158
5.3
1.84
29
11.3
.272
6
.10
166
1.07
6.5
.38
158
4.2
1.62
22
11.4
.271
6
.16
151
1.12
7.0
.39
157
3.2
1.45
15
11.5
.267
6
.23
147
1.17
Notes:
1. S-parameters are de-embedded from 100 mil BeO package measured data using the package model found in the
DEVICE MODELS section.
2. S-parameter data assumes an external 45 pF capacitor. Low fequency performance can be extended using a larger
valued capacitor.
S
11
S
21
S
12
S
22
6-433
MSA-0900 Bonding Diagram
MSA
Die
5
1
4
2
2
3
A09
Input Trace
Numbers refer to pin contacts listed on the Chip Outline.
Capacitor
(45 pF typ)
Ground
Ground
Output
Trace
(backside
contact)
G
p
(dB)
0.1
.02
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 35 mA.
20
10
30
40
50
I
d
(mA)
Figure 2. Power Gain vs. Current.
0
3
6
9
12
15
18
4
5
6
8
7
9
Open Loop
Closed Loop
G
p
(dB)
0.1 GHz
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 1.0 GHz, I
d
= 35 mA.
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression and Noise Figure vs.
Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
6
15
12
9
P
1 dB
(dBm)
I
d
= 25 mA
4
5
6
7
7
8
11
12
13
25
55
+25
+85
+125
P
1 dB
(dBm)
NF (dB)
Gp (dB)
TEMPERATURE (
°
C)
G
P
5.5
6.0
6.5
7.0
NF (dB)
6.0 GHz
1.0 GHz,
4.0 GHz
1.0 GHz,
4.0 GHz
P
1 dB
NF
I
d
= 35 mA
I
d
= 45 mA
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
MSA-0900 Chip Dimensions
AK
335
µ
m
13.2 mil
OPTIONAL
TOPSIDE
OUTPUT
[1]
450
µ
m
17.7 mil
GROUND
(2)
(3) OUTPUT
(BACKSIDE CONTACT)
(4) BONDPAD
FOR FEEDBACK
CAPACITOR
(1) INPUT
(5)
Unless otherwise specified, tolerances are
±
13
µ
m /
±
0.5 mils. Chip thickness is 114
µ
m / 4.5 mil.
Bond Pads are 41
µ
m / 1.6 mil typical on each side.
Note 1: Output contact is made by die attaching the
backside of the die.
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