Document Outline
- List of Figures
- 1. Typical Power Gain vs. Frequency
- 2. Power Gain vs. Current
- 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature
- 4. Output Power at 1 dB Gain Compression vs. Frequency
- 5. Noise Figure vs. Frequency
- Features
- Description
- Typical Biasing Configuration
- Chip Outline
- MSA-0800 Absolute Maximum Ratings
- Electrical Specifications
- Part Number Ordering Information
- MSA-0800 Typical Scattering Parameters
- Typical Performance
- MSA-0800 Chip Dimensions
6-410
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Usable Gain to 6.0 GHz
· High Gain:
32.5 dB Typical at 0.1 GHz
23.5 dB Typical at 1.0 GHz
· Low Noise Figure:
3.0 dB Typical at 1.0 GHz
MSA-0800
Chip Outline
[1]
Description
The MSA-0800 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is de-
signed for use as a general purpose
50
gain block above 0.5 GHz and
can be used as a high gain transis-
tor below this frequency. Typical
applications include narrow and
broad band IF and RF amplifiers in
commercial, industrial and military
applications.
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
10
V
V
d
= 7.8 V
RFC (Optional)
IN
OUT
MSA
Note:
1. Refer to the APPLICATIONS section
"Silicon MMIC Chip Use" for additional
information.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400
°
C and either wedge
or ball bonding using 0.7 mil gold
wire.
[1]
See APPLICATIONS
section, "Chip Use".
5965-9595E
6-411
MSA-0800 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
80 mA
Power Dissipation
[2,3]
750 mW
RF Input Power
+13 dBm
Junction Temperature
200
°
C
Storage Temperature
200
°
C
Thermal Resistance
[2,4]
:
jc
= 70
°
C/W
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0800-GP4
100
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
32.5
f = 1.0 GHz
23.5
f = 4.0 GHz
11.0
Input VSWR
f = 1.0 to 3.0 GHz
2.0:1
Output VSWR
f = 1.0 to 3.0 GHz
1.9:1
NF
50
Noise Figure
f = 1.0 GHz
dB
3.0
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
12.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
27.0
t
D
Group Delay
f = 1.0 GHz
psec
125
V
d
Device Voltage
V
7.0
7.8
8.4
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
17.0
Notes:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 36 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
°
C.
3. Derate at 14.3 mW/
°
C for T
Mounting Surface
> 148
°
C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
jc
than do alternate methods. See MEASURE-
6-412
MSA-0800 Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 36 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
.65
17
32.6
42.50
163
36.9
.014
39
.64
20
0.80
0.2
.61
31
31.7
38.59
148
34.1
.020
47
.59
39
0.68
0.4
.50
54
29.6
30.22
126
31.0
.028
52
.49
68
0.63
0.6
.43
70
27.5
23.64
113
28.5
.038
52
.40
90
0.69
0.8
.38
81
25.6
19.05
103
26.7
.046
53
.35
106
0.75
1.0
.34
95
24.2
16.27
93
25.4
.054
55
.30
120
0.80
1.5
.31
110
20.9
11.12
78
23.6
.066
53
.23
142
0.88
2.0
.32
124
18.3
8.22
66
22.6
.075
53
.17
158
0.98
2.5
.33
129
16.3
6.52
61
20.7
.092
57
.13
162
1.00
3.0
.34
138
14.4
5.24
54
20.3
.097
54
.07
165
1.11
3.5
.36
146
12.8
4.36
45
19.0
.112
50
.07
140
1.11
4.0
.36
155
11.3
3.68
37
18.3
.122
49
.10
96
1.16
5.0
.35
177
8.7
2.73
23
17.2
.138
43
.15
75
1.28
6.0
.43
150
6.3
2.07
10
16.6
.148
35
.15
81
1.40
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 36 mA.
0
5
10
15
20
25
30
35
Gain Flat to DC
I
d
(mA)
Figure 2. Power Gain vs. Current.
5
10
15
20
25
30
35
G
p
(dB)
10
30
40
20
0.1 GHz
3.0
2.5
3.5
4.0
4.5
NF (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
4
6
8
10
16
14
12
P
1 dB
(dBm)
I
d
= 36 mA
I
d
= 40 mA
2
3
4
10
11
12
13
21
22
23
24
55 25
+25
+85
+125
P
1 dB
(dBm)
NF (dB)
Gp (dB)
TEMPERATURE (
°
C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, I
d
= 36 mA.
P
1 dB
NF
G
P
4.0 GHz
2.0 GHz
1.0 GHz
0.5 GHz
I
d
= 20 mA
I
d
= 20 mA
I
d
= 36 mA
I
d
= 40 mA
6-413
MSA-0800 Chip Dimensions
GROUND
INPUT
394
µ
m
15.5 mil
305
µ
m
12 mil
OPTIONAL
OUTPUT
[1]
Unless otherwise specified, tolerances are
±
13
µ
m /
±
0.5 mils. Chip thickness is 114
µ
m / 4.5 mil.
Bond Pads are 41
µ
m / 1.6 mil typical on each side.
Note 1: Output contact is made by die attaching the
backside of the die.
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