ChipFind - Datasheet

Part Number MSA-0435

Download:  PDF   ZIP

Document Outline

6-330
Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
Features
· Cascadable 50
Gain Block
· 3 dB Bandwidth:
DC to 3.8 GHz
· 12.5 dBm Typical P
1 dB
at
1.0 GHz
· 8.5 dB Typical Gain at
1.0 GHz
· Unconditionally Stable
(k>1)
· Cost Effective Ceramic
Microstrip Package
MSA-0435, -0436
35 micro-X Package
[1]
Description
The MSA-0435 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
Typical Biasing Configuration
Note:
1.
Short leaded 36 package available
upon request.
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5.25 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0436.
5965-9575E
6-331
MSA-0435, -0436 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
100 mA
Power Dissipation
[2,3]
650 mW
RF Input Power
+13 dBm
Junction Temperature
200
°
C
Storage Temperature
[4]
­65 to 200
°
C
Thermal Resistance
[2,5]
:
jc
= 140
°
C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 7.1 mW/
°
C for T
C
> 109
°
C.
4. Storage above +150
°
C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of q
jc
than do alternate methods. See MEASURE-
MENTS section "Thermal Resistance" for more information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
7.5
8.5
9.5
G
P
Gain Flatness
f = 0.1 to 2.5 GHz
dB
±
0.6
±
1.0
f
3 dB
3 dB Bandwidth
GHz
3.8
Input VSWR
f = 0.1 to 2.5 GHz
1.4:1
Output VSWR
f = 0.1 to 2.5 GHz
1.9:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
12.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
25.5
t
D
Group Delay
f = 1.0 GHz
psec
125
V
d
Device Voltage
V
4.75
5.25
5.75
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
­8.0
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions: I
d
= 50 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0435
10
Strip
MSA-0436-BLK
100
Antistatic Bag
MSA-0436-TR1
1000
7" Reel
For more information, see "Tape and Reel Packaging for Semiconductor Devices".
6-332
MSA-0435, -0436 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
°
C, I
d
= 50 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.08
175
8.5
2.67
175
­16.4
.151
1
.20
­10
0.2
.08
172
8.5
2.68
170
­16.3
.153
2
.20
­16
0.4
.07
171
8.5
2.67
161
­16.4
.151
3
.20
­33
0.6
.07
166
8.5
2.66
151
­16.2
.155
6
.21
­45
0.8
.05
169
8.4
2.64
142
­16.1
.156
8
.22
­57
1.0
.05
175
8.3
2.61
136
­16.0
.159
10
.24
­68
1.5
.04
­142
8.1
2.55
109
­15.0
.178
13
.26
­96
2.0
.09
­145
7.8
2.46
87
­14.2
.196
15
.28
­123
2.5
.14
­154
7.3
2.33
71
­13.1
.221
18
.31
­140
3.0
.22
­175
6.6
2.14
50
­12.5
.238
14
.33
­160
3.5
.28
170
5.8
1.94
32
­11.7
.260
9
.35
­173
4.0
.34
156
4.8
1.74
15
­11.3
.271
4
.34
­179
4.5
.37
140
3.9
1.57
­1
­10.7
.291
­2
.33
­171
5.0
.42
120
3.0
1.41
­16
­10.4
.302
­8
.32
­160
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
0.1
0.3 0.5
1.0
3.0
6.0
0
2
4
6
8
10
12
G
p
(dB)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
°
C, I
d
= 50 mA.
Gain Flat to DC
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
20
40
60
80
I
d
(mA)
2
3
4
5
6
7
1
T
C
= +125
°
C
T
C
= +25
°
C
T
C
= ­55
°
C
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
5
6
7
8
9
G
p
(dB)
20
40
50
60
70
30
5
6
7
5
6
7
8
9
11
10
12
13
8
P
1 dB
(dBm)
G
p
(dB)
TEMPERATURE, (
°
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=50mA.
P
1 dB
­55
­25
+25
+85
+125
G
P
NF
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
3
6
9
12
15
18
21
P
1 dB
(dBm)
I
d
= 70 mA
I
d
= 30 mA
I
d
= 50 mA
4.0
6.0
5.5
6.5
7.0
7.5
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
NF (dB)
FREQUENCY (GHz)
I
d
= 30 mA
I
d
= 50 mA
I
d
= 70 mA
0.1 GHz
1.0 GHz
2.0 GHz
6-333
35 micro-X Package Dimensions
1
3
4
2
GROUND
DIA.
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.085
2.15
.083
2.11
.020
.508
.100
2.54
.455
±
.030
11.54
±
.75
.006
±
.002
.15
±
.05
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
mm
.022
.56
.057
±
.010
1.45
±
.25
A04