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Part Number MSA-0400

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6-318
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Cascadable 50
Gain Block
· 3 dB Bandwidth:
DC to 4.0 GHz
· 8.5 dB Typical Gain at
1.0 GHz
· 16.0 dBm Typical P
1 dB
at
1.0 GHz
MSA-0400
Chip Outline
[1]
Description
The MSA-0400 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
Typical Biasing Configuration
Note:
1. Refer to the APPLICATIONS section
"Silicon MMIC Chip Use" for additional
information.
C
block
C
block
R
bias
V
CC
>
10 V
V
d
= 6.3 V
RFC (Optional)
IN
OUT
MSA
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400
°
C and either wedge
or ball bonding using 0.7 mil gold
wire.
See APPLICATIONS section,
"Chip Use".
5965-9572E
6-319
MSA-0400 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
120 mA
Power Dissipation
[2,3]
850 mW
RF Input Power
+13 dBm
Junction Temperature
200
°
C
Storage Temperature
­65 to 200
°
C
Thermal Resistance
[2,4]
:
jc
= 35
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
°
C.
3. Derate at 28.6 mW/
°
C for
T
MS
> 170
°
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section
"Thermal Resistance" for more
information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
8.5
G
P
Gain Flatness
f = 0.1 to 2.5 GHz
dB
±
0.6
f
3 dB
3 dB Bandwidth
GHz
4.3
Input VSWR
f = 0.1 to 2.5 GHz
1.7:1
Output VSWR
f = 0.1 to 2.5 GHz
1.8:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.5
Output Power at 1 dB Gain Compression
f = 1.0 GHz, I
d
= 50 mA
dBm
12.5
Output Power at 1 dB Gain Compression
f = 1.0 GHz, I
d
= 90 mA
dBm
16.0
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
30.0
t
D
Group Delay
f = 1.0 GHz
psec
140
V
d
Device Voltage
V
5.7
6.3
6.9
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
­8.0
Notes:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 90 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
P
1 dB
Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 50 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
.18
179
8.6
2.68
177
­16.4
.151
1
.10
­13
1.37
0.5
.18
­179
8.6
2.68
163
­16.3
.153
7
.16
­54
1.34
1.0
.16
­171
8.5
2.65
145
­15.8
.161
10
.22
­83
1.28
1.5
.16
­161
8.4
2.63
127
­15.4
.169
16
.29
­101
1.19
2.0
.21
­156
8.2
2.56
109
­14.6
.187
18
.33
­119
1.07
2.5
.27
­152
7.8
2.45
98
­13.8
.205
24
.37
­128
0.98
3.0
.33
­159
7.0
2.23
82
­13.4
.213
24
.42
­140
0.91
4.0
.42
­171
5.2
1.81
54
­12.5
.237
21
.42
­151
0.86
5.0
.45
172
3.4
1.49
3
­11.7
.259
17
.38
­153
0.94
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
S
11
S
21
S
12
S
22
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0400-GP4
100
6-320
MSA-0400 Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 90 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
.25
179
8.7
2.73
177
­16.4
.152
2
.03
­36
1.33
0.5
.24
173
8.8
2.76
164
­16.3
.153
5
.10
­83
1.31
1.0
.22
166
8.8
2.74
148
­15.9
.160
10
.19
­91
1.26
1.5
.16
164
8.8
2.74
132
­15.3
.172
16
.27
­94
1.18
2.0
.13
173
8.7
2.73
116
­14.5
.189
22
.32
­98
1.10
2.5
.12
­162
8.3
2.60
106
­13.9
.203
31
.36
­95
1.04
3.0
.14
­147
8.0
2.50
90
­13.1
.222
33
.40
­95
0.97
4.0
.17
­154
6.7
2.17
64
­10.9
.286
36
.43
­93
0.87
5.0
.20
146
5.2
1.83
41
­9.2
.346
36
.40
­94
0.89
Note:
1. S-parameters are de-embedded from 200 mil BeO package measured data using the package model found in the
DEVICE MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
0.1
0.3 0.5
1.0
3.0
6.0
0
2
4
6
8
10
12
G
p
(dB)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
°
C, I
d
= 90 mA.
Gain Flat to DC
30
50
70
90
110
6
7
8
9
10
I
d
(mA)
Figure 2. Power Gain vs. Current.
G
p
(dB)
5
6
7
5
6
7
8
9
14
12
16
18
8
9
P
1 dB
(dBm)
NF (dB)
G
P
G
p
(dB)
TEMPERATURE (
°
C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f=1.0 GHz, I
d
=90mA.
P
1 dB
­55
­25
+25
+85
+125
NF
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
6
9
12
15
18
21
24
P
1 dB
(dBm)
I
d
= 110 mA
I
d
= 50 mA
I
d
= 90 mA
6.0
5.5
6.5
7.0
7.5
NF (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
FREQUENCY (GHz)
I
d
= 110 mA
I
d
= 90 mA
I
d
= 50 mA
0.1 GHz
1.0 GHz
2.0 GHz
6-321
MSA-0400 Chip Dimensions
OPTIONAL
OUTPUT
[1]
394
µ
m
15.5 mil
394
µ
m
15.5 mil
INPUT
GROUND
Unless otherwise specified, tolerances are
±
13
µ
m /
±
0.5 mils. Chip thickness is 114
µ
m / 4.5 mil.
Bond Pads are 41
µ
m / 1.6 mil typical on each side.
Note 1: Output contact is made by die attaching the
backside of the die.