Document Outline
- List of Figures
- 1. Typical Power Gain vs. Frequency
- 2. Power Gain vs. Current
- 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature
- 4. Output Power at 1 dB Gain Compression vs. Frequency
- 5. Noise Figure vs. Frequency
- Features
- Description
- Typical Biasing Configuration
- Chip Outline
- MSA-0400 Absolute Maximum Ratings
- Part Number Ordering Information
- Electrical Specifications
- Typical Scattering Parameters
- MSA-0400 Typical Scattering Parameters
- Typical Performance
- MSA-0400 Chip Dimensions
6-318
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Cascadable 50
Gain Block
· 3 dB Bandwidth:
DC to 4.0 GHz
· 8.5 dB Typical Gain at
1.0 GHz
· 16.0 dBm Typical P
1 dB
at
1.0 GHz
MSA-0400
Chip Outline
[1]
Description
The MSA-0400 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
Typical Biasing Configuration
Note:
1. Refer to the APPLICATIONS section
"Silicon MMIC Chip Use" for additional
information.
C
block
C
block
R
bias
V
CC
>
10 V
V
d
= 6.3 V
RFC (Optional)
IN
OUT
MSA
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400
°
C and either wedge
or ball bonding using 0.7 mil gold
wire.
See APPLICATIONS section,
"Chip Use".
5965-9572E
6-319
MSA-0400 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
120 mA
Power Dissipation
[2,3]
850 mW
RF Input Power
+13 dBm
Junction Temperature
200
°
C
Storage Temperature
65 to 200
°
C
Thermal Resistance
[2,4]
:
jc
= 35
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
°
C.
3. Derate at 28.6 mW/
°
C for
T
MS
> 170
°
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section
"Thermal Resistance" for more
information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
8.5
G
P
Gain Flatness
f = 0.1 to 2.5 GHz
dB
±
0.6
f
3 dB
3 dB Bandwidth
GHz
4.3
Input VSWR
f = 0.1 to 2.5 GHz
1.7:1
Output VSWR
f = 0.1 to 2.5 GHz
1.8:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.5
Output Power at 1 dB Gain Compression
f = 1.0 GHz, I
d
= 50 mA
dBm
12.5
Output Power at 1 dB Gain Compression
f = 1.0 GHz, I
d
= 90 mA
dBm
16.0
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
30.0
t
D
Group Delay
f = 1.0 GHz
psec
140
V
d
Device Voltage
V
5.7
6.3
6.9
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
8.0
Notes:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 90 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
P
1 dB
Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 50 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
.18
179
8.6
2.68
177
16.4
.151
1
.10
13
1.37
0.5
.18
179
8.6
2.68
163
16.3
.153
7
.16
54
1.34
1.0
.16
171
8.5
2.65
145
15.8
.161
10
.22
83
1.28
1.5
.16
161
8.4
2.63
127
15.4
.169
16
.29
101
1.19
2.0
.21
156
8.2
2.56
109
14.6
.187
18
.33
119
1.07
2.5
.27
152
7.8
2.45
98
13.8
.205
24
.37
128
0.98
3.0
.33
159
7.0
2.23
82
13.4
.213
24
.42
140
0.91
4.0
.42
171
5.2
1.81
54
12.5
.237
21
.42
151
0.86
5.0
.45
172
3.4
1.49
3
11.7
.259
17
.38
153
0.94
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
S
11
S
21
S
12
S
22
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0400-GP4
100
6-320
MSA-0400 Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 90 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
.25
179
8.7
2.73
177
16.4
.152
2
.03
36
1.33
0.5
.24
173
8.8
2.76
164
16.3
.153
5
.10
83
1.31
1.0
.22
166
8.8
2.74
148
15.9
.160
10
.19
91
1.26
1.5
.16
164
8.8
2.74
132
15.3
.172
16
.27
94
1.18
2.0
.13
173
8.7
2.73
116
14.5
.189
22
.32
98
1.10
2.5
.12
162
8.3
2.60
106
13.9
.203
31
.36
95
1.04
3.0
.14
147
8.0
2.50
90
13.1
.222
33
.40
95
0.97
4.0
.17
154
6.7
2.17
64
10.9
.286
36
.43
93
0.87
5.0
.20
146
5.2
1.83
41
9.2
.346
36
.40
94
0.89
Note:
1. S-parameters are de-embedded from 200 mil BeO package measured data using the package model found in the
DEVICE MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
0.1
0.3 0.5
1.0
3.0
6.0
0
2
4
6
8
10
12
G
p
(dB)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
°
C, I
d
= 90 mA.
Gain Flat to DC
30
50
70
90
110
6
7
8
9
10
I
d
(mA)
Figure 2. Power Gain vs. Current.
G
p
(dB)
5
6
7
5
6
7
8
9
14
12
16
18
8
9
P
1 dB
(dBm)
NF (dB)
G
P
G
p
(dB)
TEMPERATURE (
°
C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f=1.0 GHz, I
d
=90mA.
P
1 dB
55
25
+25
+85
+125
NF
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
6
9
12
15
18
21
24
P
1 dB
(dBm)
I
d
= 110 mA
I
d
= 50 mA
I
d
= 90 mA
6.0
5.5
6.5
7.0
7.5
NF (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
FREQUENCY (GHz)
I
d
= 110 mA
I
d
= 90 mA
I
d
= 50 mA
0.1 GHz
1.0 GHz
2.0 GHz
6-321
MSA-0400 Chip Dimensions
OPTIONAL
OUTPUT
[1]
394
µ
m
15.5 mil
394
µ
m
15.5 mil
INPUT
GROUND
Unless otherwise specified, tolerances are
±
13
µ
m /
±
0.5 mils. Chip thickness is 114
µ
m / 4.5 mil.
Bond Pads are 41
µ
m / 1.6 mil typical on each side.
Note 1: Output contact is made by die attaching the
backside of the die.