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Part Number MSA-0304

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6-294
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Cascadable 50
Gain Block
· 3 dB Bandwidth:
DC to 1.6 GHz
· 11.0 dB Typical Gain at
1.0 GHz
· 10.0 dBm Typical P
1 dB
at
1.0 GHz
· Unconditionally Stable
(k>1)
· Low Cost Plastic Package
MSA-0304
04A Plastic Package
Description
The MSA-0304 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
plastic package. This MMIC is
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military
applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9566E
6-295
MSA-0304 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
70 mA
Power Dissipation
[2,3]
400 mW
RF Input Power
+13 dBm
Junction Temperature
150
°
C
Storage Temperature
­65 to 150
°
C
Thermal Resistance
[2,4]
:
jc
= 100
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 10 mW/
°
C for T
C
> 110
°
C.
4. See MEASUREMENTS section
"Thermal Resistance" for more
information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
12.5
f = 0.5 GHz
10.0
12.0
f = 1.0 GHz
11.0
G
P
Gain Flatness
f = 0.1 to 1.3 GHz
dB
±
1.0
f
3 dB
3 dB Bandwidth
GHz
1.6
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
Output VSWR
f = 0.1 to 3.0 GHz
1.6:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.0
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
10.0
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
t
D
Group Delay
f = 1.0 GHz
psec
150
V
d
Device Voltage
V
4.5
5.0
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
­8.0
Note:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
6-296
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
MSA-0304 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
°
C, I
d
= 35 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.10
173
12.5
4.24
173
­18.5
.120
3
.12
­13
0.2
.10
162
12.5
4.21
167
­18.2
.123
4
.12
­24
0.4
.09
142
12.2
4.08
153
­18.0
.125
7
.13
­46
0.6
.08
127
11.9
3.93
141
­17.8
.128
10
.15
­64
0.8
.07
110
11.5
3.76
130
­17.3
.136
14
.16
­78
1.0
.06
92
11.1
3.58
118
­16.8
.144
16
.17
­91
1.5
.03
58
10.0
3.15
93
­15.5
.169
19
.19
­117
2.0
.03
175
8.8
2.76
71
­14.1
.197
18
.20
­139
2.5
.05
163
7.8
2.46
55
­13.2
.218
18
.21
­158
3.0
.12
148
6.8
2.20
38
­12.2
.246
15
.22
­174
3.5
.19
129
5.9
1.98
20
­11.2
.275
7
.24
171
4.0
.26
110
5.0
1.77
3
­10.6
.296
1
.26
158
5.0
.44
77
3.0
1.41
­28
­9.9
.319
­15
.29
128
6.0
.63
52
0.4
1.05
­56
­10.2
.310
­31
.37
94
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
°
C, I
d
= 35 mA.
0
2
4
6
8
10
12
14
Gain Flat to DC
5.5
5.0
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
3
6
9
12
15
18
P
1 dB
(dBm)
I
d
= 50 mA
I
d
= 20 mA
I
d
= 35 mA
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
60
I
d
(mA)
0
2
3
4
5
6
1
40
50
T
C
= +85
°
C
T
C
= +25
°
C
T
C
= ­25
°
C
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
G
p
(dB)
15
25
30
40
50
35
20
5
6
7
8
9
10
11
10
11
12
­55
­25
0
+25
+55
+85
+125
P
1 dB
(dBm)
NF (dB)
TEMPERATURE (
°
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=35mA.
NF
G
P
P
1 dB
G
p
(dB)
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
6-297
04A Plastic Package Dimensions
1
4
3
0.76 (0.030)
0.20 ± 0.050
(0.008 ± 0.002)
3.68
(0.145)
2.54 ± 0.25
(0.100 ± 0.010)
12.39 ± 0.76
(0.488 ± 0.030)
1
2
0.51
(0.020)
0.96 (0.038)
4.29
(0.169)
0.76 (0.030)
DIA.
DIMENSIONS ARE IN MILLIMETERS (INCHES).
RF INPUT
RF OUTPUT
& BIAS
GROUND
GROUND
NOTES:
(UNLESS OTHERWISE SPECIFIED)
1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)
2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005
3