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Part Number MSA-0186

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6-262
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Cascadable 50
Gain Block
· 3 dB Bandwidth:
DC to 0.9 GHz
· High Gain:
17.5 dB Typical at 0.5 GHz
· Unconditionally Stable
(k>1)
· Surface Mount Plastic
Package
· Tape-and-Reel Packaging
Option Available
[1]
MSA-0186
86 Plastic Package
Description
The MSA-0186 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
Note:
1. Refer to PACKAGING section "Tape-
and-Reel Packaging for Semiconductor
Devices".
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9694E
6-263
MSA-0186 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power
+13 dBm
Junction Temperature
150
°
C
Storage Temperature
­65 to 150
°
C
Thermal Resistance
[2,4]
:
jc
= 115
°
C/W
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
18.5
f = 0.5 GHz
15.5
17.5
G
P
Gain Flatness
f = 0.1 to 0.6 GHz
dB
±
0.7
f
3 dB
3 dB Bandwidth
GHz
0.9
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
Output VSWR
f = 0.1 to 3.0 GHz
1.2:1
NF
50
Noise Figure
f = 0.5 GHz
dB
5.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
1.5
IP
3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.0
t
D
Group Delay
f = 0.5 GHz
psec
200
V
d
Device Voltage
V
4.0
5.0
6.0
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
­9.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions: I
d
= 17 mA, Z
O
= 50
Units
Min.
Typ.
Max.
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 8.7 mW/
°
C for T
C
> 127
°
C.
4. See MEASUREMENTS section "Thermal Resistance" for more information.
VSWR
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0186-BLK
100
Antistatic Bag
MSA-0186-TR1
1000
7" Reel
For more information refer to PACKAGING section, "Tape and Reel
Packaging for Semiconductor Devices."
6-264
MSA-0186 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
°
C, I
d
= 17 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.05
148
18.5
8.39
171
­23.0
.071
4
.08
­7
0.2
.06
124
18.3
8.22
162
­22.8
.073
9
.08
­14
0.3
.07
103
18.1
8.03
154
­22.6
.074
13
.07
­24
0.4
.08
89
17.7
7.67
146
­22.2
.078
14
.07
­31
0.5
.08
76
17.4
7.42
139
­21.9
.081
17
.06
­39
0.6
.09
66
17.0
7.06
131
­21.4
.085
21
.06
­47
0.8
.10
50
16.2
6.47
119
­20.5
.094
25
.07
­67
1.0
.10
35
15.3
5.83
107
­19.6
.105
29
.07
­89
1.5
.07
12
13.2
4.57
83
­17.7
.131
30
.08
­165
2.0
.02
­12
11.3
3.67
64
­16.1
.157
27
.08
156
2.5
.06
165
9.8
3.09
50
­14.8
.182
24
.08
134
3.0
.14
150
8.3
2.60
34
­13.9
.202
19
.09
124
3.5
.23
137
7.0
2.24
20
­13.4
.213
12
.09
117
4.0
.31
125
5.7
1.93
6
­13.0
.223
5
.09
114
5.0
.45
105
3.3
1.46
­17
­12.7
.231
­5
.09
132
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
0
1
3
2
5
4
6
7
16
17
18
5
­25
0
+25
+55
+85
6
7
4
P
1 dB
(dBm)
NF (dB)
G
P
P
1 dB
NF
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
°
C, I
d
= 17 mA.
0
3
6
9
12
15
18
24
21
G
p
(dB)
TEMPERATURE (
°
C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz,
I
d
=17 mA.
5.0
5.5
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
­4
­2
0
2
4
6
P
1 dB
(dBm)
Gain Flat to DC
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
5
10
15
20
25
I
d
(mA)
0
2
3
4
5
6
1
I
d
= 20 mA
I
d
= 17 mA
I
d
= 13 mA
T
C
= +85
°
C
T
C
= +25
°
C
T
C
= ­25
°
C
I
d
= 13 mA
I
d
= 17 mA
I
d
= 25 mA
I
d
= 13 mA
I
d
= 17 mA
I
d
= 20 mA
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
6-265
86 Plastic Package Dimensions
4
0.51
±
0.13
(0.020
±
0.005)
2.34
±
0.38
(0.092
±
0.015)
2.67
±
0.38
(0.105
±
0.15)
1
3
2
2.16
±
0.13
(0.085
±
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52
±
0.25
(0.060
±
0.010)
0.66
±
0.013
(0.026
±
0.005)
0.203
±
0.051
(0.006
±
0.002)
0.30 MIN
(0.012 MIN)
C
L
45
°
5
°
TYP.
8
°
MAX
0
°
MIN
GROUND
RF INPUT
RF OUTPUT
AND DC BIAS
GROUND
A01