Document Outline
- List of Figures
- 1. Typical Power Gain vs. Frequency
- 2. Device Current vs. Voltage
- 3. Power Gain vs. Current
- 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature
- 5. Output Power at 1 dB Gain Compression vs. Frequency
- 6. Noise Figure vs. Frequency
- Features
- Description
- Typical Biasing Configuration
- 85 Plastic Package
- MSA-0185 Absolute Maximum Ratings
- MSA-0185 Electrical Specifications
- MSA-0185 Typical Scattering Parameters
- MSA-0185 Typical Performance
- 85 Plastic Package Dimensions
6-258
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Cascadable 50
Gain Block
· 3 dB Bandwidth:
DC to 1.0 GHz
· High Gain:
17.5 dB Typical at 0.5 GHz
· Unconditionally Stable
(k>1)
· Low Cost Plastic Package
MSA-0185
85 Plastic Package
Description
The MSA-0185 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military
applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9693E
6-259
MSA-0185 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power
+13 dBm
Junction Temperature
150
°
C
Storage Temperature
65 to 150
°
C
Thermal Resistance
[2,4]
:
jc
= 105
°
C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 9.5 mW/
°
C for T
C
> 129
°
C.
4. See MEASUREMENTS section "Thermal Resistance" for more information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
18.5
f = 0.5 GHz
16.0
17.5
G
P
Gain Flatness
f = 0.1 to 0.6 GHz
dB
±
0.6
f
3 dB
3 dB Bandwidth
GHz
1.0
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
Output VSWR
f = 0.1 to 3.0 GHz
1.3:1
NF
50
Noise Figure
f = 0.5 GHz
dB
5.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
1.5
IP
3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.0
t
D
Group Delay
f = 0.5 GHz
psec
150
V
d
Device Voltage
V
4.0
5.0
6.0
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
9.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
MSA-0185 Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions: I
d
= 17 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
6-260
MSA-0185 Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
0
1
3
2
5
4
6
7
16
17
18
5
25
0
+25
+55
+85
6
7
4
P
1 dB
(dBm)
NF (dB)
G
P
P
1 dB
NF
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
°
C, I
d
= 17 mA.
I
d
(mA)
Figure 3. Power Gain vs. Current.
0
5
10
15
20
25
0
3
6
9
12
15
18
21
G
p
(dB)
G
p
(dB)
10
20
25
30
15
TEMPERATURE (
°
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz, I
d
= 17 mA.
0.1 GHz
1.0 GHz
2.0 GHz
5.0
5.5
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
4
2
0
2
4
6
P
1 dB
(dBm)
Gain Flat to DC
0.5 GHz
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
5
10
15
20
25
I
d
(mA)
0
2
3
4
5
6
1
I
d
= 20 mA
I
d
= 17 mA
I
d
= 13 mA
T
C
= +85
°
C
T
C
= +25
°
C
T
C
= 25
°
C
I
d
= 13 mA
I
d
= 17 mA
I
d
= 20 mA
MSA-0185 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
°
C, I
d
= 17 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.06
166
18.4
8.36
172
22.6
.074
3
.07
17
0.2
.06
149
18.3
8.20
165
22.0
.079
8
.07
28
0.3
.06
133
18.1
8.01
158
22.2
.078
11
.08
43
0.4
.06
120
17.8
7.78
151
21.9
.080
14
.09
56
0.5
.06
105
17.5
7.53
144
21.4
.085
18
.09
68
0.6
.06
94
17.2
7.23
138
21.4
.085
19
.09
75
0.8
.07
72
16.5
6.66
127
20.7
.092
24
.10
89
1.0
.07
49
15.7
6.09
116
19.7
.104
27
.10
100
1.5
.07
12
13.8
4.89
94
18.0
.126
32
.11
120
2.0
.04
13
12.0
3.98
76
16.2
.154
31
.11
134
2.5
.03
84
10.6
3.38
65
15.1
.175
33
.11
138
3.0
.07
159
9.2
2.88
52
14.2
.194
29
.09
146
3.5
.12
174
8.0
2.50
38
13.3
.216
24
.08
135
4.0
.16
170
6.8
2.19
26
12.8
.229
19
.08
120
4.5
.21
150
5.7
1.93
14
12.3
.242
13
.08
107
5.0
.25
126
4.7
1.72
3
12.2
.245
6
.07
110
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
6-261
85 Plastic Package Dimensions
1
3
4
2
5
°
TYP.
45
°
GROUND
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.085
2.15
.286
±
.030
7.36
±
.76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
mm
.020
.51
.07
0.43
.060
±
.010
1.52
±
.25
.006
±
.002
.15
±
.05
0.143
±
0.015
3.63
±
0.38
A01
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