Document Outline
- List of Figures
- 1. Typical Power Gain vs. Frequency
- 2. Device Current vs. Voltage
- 3. Power Gain vs. Current
- 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature
- 5. Output Power at 1 dB Gain Compression vs. Frequency
- 6. Noise Figure vs. Frequency
- Features
- Description
- Typical Biasing Configuration
- 04A Plastic Package
- MSA-0104 Absolute Maximum Ratings
- MSA-0104 Electrical Specifications
- MSA-0104 Typical Scattering Parameters
- MSA-0104 Typical Performance
- 04A Plastic Package Dimensions
6-246
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Cascadable 50
Gain Block
· 3 dB Bandwidth:
DC to 0.8 GHz
· High Gain:
17.0 dB Typical at 0.5 GHz
· Unconditionally Stable
(k>1)
· Low Cost Plastic Package
MSA-0104
04A Plastic Package
Description
The MSA-0104 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
wide bandwidth IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9690E
6-247
MSA-0104 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power
+13 dBm
Junction Temperature
150
°
C
Storage Temperature
65 to 150
°
C
Thermal Resistance
[2,4]
:
jc
= 100
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 10 mW/
°
C for T
C
> 130
°
C.
4. See MEASUREMENTS section
"Thermal Resistance" for more
information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
17.0
18.5
f = 0.5 GHz
17.0
G
P
Gain Flatness
f = 0.1 to 0.6 GHz
dB
±
1.0
f
3 dB
3 dB Bandwidth
GHz
0.8
Input VSWR
f = 0.1 to 3.0 GHz
1.4:1
Output VSWR
f = 0.1 to 3.0 GHz
1.3:1
NF
50
Noise Figure
f = 0.5 GHz
dB
5.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
1.5
IP
3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.0
t
D
Group Delay
f = 0.5 GHz
psec
180
V
d
Device Voltage
V
4.5
5.0
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
9.0
Notes:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
MSA-0104 Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions: I
d
= 17 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
MSA-0104 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
°
C, I
d
= 17 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.06
141
18.4
8.31
170
22.3
.077
5
.07
9
0.2
.08
112
18.1
8.07
160
22.3
.077
9
.07
15
0.3
.10
94
17.8
7.75
151
22.0
.079
15
.07
22
0.4
.12
77
17.4
7.38
142
21.6
.083
16
.07
32
0.5
.13
70
16.9
7.01
134
21.0
.089
19
.07
37
0.6
.14
56
16.4
6.60
127
20.7
.092
21
.08
44
0.8
.16
41
15.4
5.87
114
19.5
.106
27
.08
53
1.0
.17
28
14.3
5.21
102
18.9
.114
29
.08
61
1.5
.17
5
12.1
4.02
78
16.6
.148
30
.08
73
2.0
.13
12
10.2
3.25
59
14.9
.179
25
.07
90
2.5
.08
20
8.9
2.77
46
13.6
.209
25
.05
112
3.0
.02
37
7.7
2.42
31
12.7
.232
18
.05
134
3.5
.05
128
6.7
2.15
15
11.9
.253
10
.06
160
4.0
.12
113
5.7
1.92
1
11.3
.272
2
.06
175
4.5
.19
97
4.8
1.73
15
10.8
.289
7
.07
173
5.0
.27
80
3.9
1.56
30
10.6
.294
15
.07
150
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
6-248
MSA-0104 Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
0
1
3
2
4
5
6
7
16
17
18
5
55
25
+25
+85
+125
6
7
4
P
1 dB
(dBm)
NF (dB)
G
P
P
1 dB
NF
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
°
C, I
d
= 17 mA.
I
d
(mA)
Figure 3. Power Gain vs. Current.
0
5
10
15
20
25
0
3
6
9
12
15
18
21
G
p
(dB)
G
p
(dB)
10
20
25
30
15
TEMPERATURE (
°
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz, I
d
= 17 mA.
0.1 GHz
1.0 GHz
2.0 GHz
5.0
5.5
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
4
2
0
2
4
6
P
1 dB
(dBm)
Gain Flat to DC
0.5 GHz
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
5
10
15
20
25
I
d
(mA)
0
2
3
4
5
6
1
I
d
= 20 mA
I
d
= 17 mA
I
d
= 13 mA
T
C
= +85
°
C
T
C
= +25
°
C
T
C
= 25
°
C
I
d
= 13 mA
I
d
= 17 mA
I
d
= 20 mA
6-249
1
4
3
0.76 (0.030)
0.20 ± 0.050
(0.008 ± 0.002)
3.68
(0.145)
2.54 ± 0.25
(0.100 ± 0.010)
12.39 ± 0.76
(0.488 ± 0.030)
1
2
0.51
(0.020)
0.96 (0.038)
4.29
(0.169)
0.76 (0.030)
DIA.
DIMENSIONS ARE IN MILLIMETERS (INCHES).
RF INPUT
RF OUTPUT
& BIAS
GROUND
GROUND
NOTES:
(UNLESS OTHERWISE SPECIFIED)
1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)
2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005
04A Plastic Package Dimensions
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