4-22
H
5965-5947E
Optical Reflective Sensors
Technical Data
Features
· Focused Emitter and
Detector in a Single Package
· TO5 Package
· Binning of Sensors by
Photocurrent (Ipr)
HEDS-1200 High
Resolution Infrared
Sensor
HEDS-1300 Precision
Resolution Sensor
Description
Both the HEDS-1200 and HEDS-
1300 sensor are fully integrated
modules designed for applications
requiring optical reflective
sensing. The modules contain an
LED emitter (at the appropriate
wavelengths) and a matched I.C.
photodetector. A bifurcated
aspheric lens is used to image the
active areas of the emitter and the
detector to a single spot that
defines the resolution of the
sensor. The output signal is a cur-
rent generated by the photodiode.
Selection Guide
Sensor
Part Number
HEDS-1200
HEDS-1300
Resolution
0.13 mm (0.005 in.)
0.19 mm (0.0075 in.)
LED Wavelength
820 nm
700 nm
Applications
· Bar Code Scanning
· Pattern Recognition and
Verification
· Object Sizing
· Optical Limit Switching
· Optical/Surface Inspection
· Tachometry
· Edge/Line Sensing
· Dimensional Monitoring
Package Dimensions
CL
5.08
(0.200)
REFERENCE PLANE
MAXIMUM SIGNAL POINT MSP
4.27 ± 0.25
(0.168 ± 0.010)
5.08
(0.200)
9.40 (0.370)
8.51 (0.335)
0.86 (0.034)
0.73 (0.029)
1.14 (0.045)
0.73 (0.029)
15.24 (0.600)
12.70 (0.500)
11.50 (0.453)
11.22 (0.442)
8.33 (0.328)
7.79 (0.307)
12.0
(0.473)
S.P.
R.P.
NOTES:
1. ALL DIMENSIONS IN MILLIMETERS AND (INCHES).
2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY.
3. THE REFERENCE PLANE (R.P.) IS THE TOP SURFACE OF THE PACKAGE.
4. NICKEL CAN AND GOLD PLATED LEADS.
5. S.P. = SEATING PLANE.
6. THE LEAD DIAMETER IS 0.45 mm (0.018 IN.) TYP.
Z
4-23
HEDS-1300 Optical System
Mechanical
Considerations
The HEDS-1200 and HEDS-1300
sensors are packaged in a high
profile 8 pin TO5 metal can with a
glass window. The emitter and
photodetector chips are mounted
on the header at the base of the
package. Positioned above these
active elements is a bifurcated
aspheric acrylic lens that focuses
them to the same point.
The sensors can be rigidly
secured by commercially available
TO5 style heat sinks, or 8 pin
0.200 inch diameter pin circle
sockets. These fixtures provide a
stable reference platform for
affixing the sensors to a circuit
board.
In applications requiring contact
scanning, protective focusing tips
are available. Focusing tips are
available in either metal (HBCS-
2999 or HBCS-4999) or
polycarbonate (HBCS-A998 or
HBCS-A999) packages using a
rugged sapphire ball as the
contact surface.
Electrical Operations
Both the HEDS-1200 and HEDS-
1300 sensors have the following
in common. The detector of the
sensor is a single photodiode. The
cathode of the emitter is physically
and electrically connected to the
case-substrate of the device.
Applications that require modula-
tion or switching of the LED
should be designed to have the
cathode connected to the electri-
cal ground of the system. Refer to
the Schematic and Connection
Diagrams that follow.
HEDS-1200 Optical System
1
7
3
5
2
6
8
4
TOP VIEW
PIN #
FUNCTION (HEDS-1200)
2
3
4
6
PHOTODIODE ANODE, SUBSTRATE, CASE
PHOTODIODE CATHODE
LED CATHODE, SUBSTRATE, CASE
LED ANODE
REFERENCE
PLANE
REFLECTOR
6
CASE, SUBSTRATE
4
DS
DP
3
2
LED
Z
DP
DS
LED
SCHEMATIC DIAGRAM
CONNECTION DIAGRAM
7
3
5
2
6
4
TOP VIEW
PIN #
FUNCTION (HEDS-1300)
2
3
4
6
PHOTODIODE ANODE
PHOTODIODE CATHODE
LED CATHODE, SUBSTRATE, CASE
LED ANODE
REFERENCE
PLANE
REFLECTOR
6
*NO CONNECTION TO BE MADE TO PIN 1 AND PIN 8
4
DS
2
LED
Z
DP
DS
LED
SCHEMATIC DIAGRAM
CONNECTION DIAGRAM
3
DS
TRANSISTOR
NOT SPECIFIED
1*
8*
1*
8*
4-24
Absolute Maximum Ratings @ T
A
= 25
°
C
Parameter
Symbol
HEDS-
Min.
Max.
Units
Fig.
Notes
Storage Temperature
Ts
1200
-40
+75
°
C
1300
-40
+75
°
C
Operating Temperature
T
A
1200
-20
+70
°
C
1300
-20
+70
°
C
Lead Soldering Temperature
1200
260
°
C
1
1.6 mm from Seating Plane
1300
for 10 sec.
1
Average LED Forward
If
1200
10
40
mA
3
Current
1300
50
mA
2
Peak LED Forward Current
Ifpk
1200
40
mA
7
4
1300
75
mA
7
4
Reverse LED Input Voltage
Vr
1200
2.5
V
1300
5.0
V
Photodiode Bias
Vd
1200
-0.3
20
V
5
(Id = 100
µ
A max)
1300
-0.3
20
V
5
Notes:
1. Caution: The thermal constraints of the acrylic lens will not permit the use of conventional wave soldering procedures. The typical
preheat and post-cleaning temperatures and dwell times can subject the lens to thermal stresses beyond the absolute maximum ratings
and can cause it to defocus.
2. Derate Maximum Average Current linearly from 65
°
C by 6 mA/
°
C [HEDS-1300 only].
3. Non-linear effects make operation of the HEDS-1200 below 10 mA not advisable.
4. 1 KHz pulse rate, 300 mS pulse width.
5. All voltages referenced to Pin 4.
System Electrical/Optical Characteristics @ T
A
= 25
°
C
Parameter
Symbol
HEDS-
Min.
Typ.
Max.
Units
Conditions
Fig.
Notes
Reflected
Ipr
1200
150
280
650
nA
If = 35 mA, Vd = 0
1A, 2, 6
6
Photocurrent
1300
150
280
650
nA
See Binning Table
1B, 2, 6
6
Quality Factor
<Q>
1200
0.82
0.95
1.0
If = 35 mA
1A
6, 7
1300
0.82
0.95
1.0
1B
6, 7
Ipr Temperature
Ke
1200
-0.005
1/
°
C
If = 35 mA
8
Coefficient
1300
-0.01
1/
°
C
8
System Optical Step
d
1200
0.13
mm
9A
9
Response Size (OSR)
1300
0.19
mm
9B
9
Maximum Signal
Zm
1200
4.01
4.27
4.62
mm
Measured from
4
Point (MSP)
1300
4.01
4.27
4.52
mm
Reference Plane
4
Effective Numerical
N.A.
1200
0.3
Aperture of
1300
0.3
Detector Lens
Notes:
6. Measured from a reflector coated with 99% diffuse reflective white paint (Kodak 6080) positioned 4.27 mm (0.168 in.) from the
sensor's reference plane. Measured physically is the total photocurrent, Ipt, which consists of a signal (reflected from target)
component, Ipr, and a component induced by reflections internal to the sensor (stray), Ips. Ipr = Ipt - Ips.
7. <Q> = Ipr/Ipt
8. Photocurrent variation with temperature follows a natural exponential law: Ip(T) = Ip(To)*exp[Ke (T-To)]
9. OSR size is defined as the distance for the 10%-90% "step" response of Ipr
as the sensor moves over an abrupt black-white edge,
or from opaque white to free space (no reflection).
4-25
Emitter Electrical/Optical Characteristics @ T
A
= 25
°
C
Parameter
Symbol
HEDS-
Min.
Typ.
Max.
Units
Conditions
Fig.
Notes
Forward
Vf
1200
1.48
1.7
V
If = 35 mA
3
Voltage
1300
1.6
1.8
V
3
Reverse Break-
BVR
1200
2.5
V
Ir = 100
µ
A
down Voltage
1300
5.0
V
Thermal Co-
Vf/
T
1200
-0.91
mV/
°
C
If = 35 mA
efficient of Vf
1300
-1.2
mV/
°
C
Peak
1200
805
820
835
nm
If = 35 mA
5
Wavelength
1300
680
700
720
nm
5
Emitting Area
Ae
1200
0.0062
sq-cm
0.0889 mm diameter
junction (0.0035 in.)
1300
0.0285
sq-cm
0.185 mm diameter
junction (0.0073 in.)
Detector Electrical/Optical Characteristics @ T
A
= 25
°
C
Parameter
Symbol
HEDS-
Min. Typ.
Max.
Units
Conditions
Fig.
Notes
Dark Current
Id
1200
50
1000
pA
Vd = 5 V, If = 0
1300
50
1000
pA
Reflection = 0%
Capacitance
Cd
1200
100
pF
Vd = 0 V, If = 0
1300
100
pF
f = 1 MHz
Detector Area
Ad
1200
0.16
sq-mm
Square, with length
1300
0.16
sq-mm
= 0.4 mm per side
Product Marking
The photocurrent binning of the
sensor is included in the 8-digit
code printed on the sensor can.
The last digit in the code repre-
sents the bin number.
See Figure 8 for suggestions in
the application of photocurrent
bins.
Test algorithm bins units to the
lowest bin number if a unit is in
the overlap region. Such units can
cross bin boundaries as tempera-
ture changes. (Ambient temper-
ature affects LED efficiency
slightly and may cause several
percent changes in Ipr). Bin
numbers are for "reference only"
and do not constitute an absolute
guarantee.
The output of all LEDs degrades
with time, depending on drive
conditions and temperature.
The entire available distribution
of parts, appropriately marked,
will be shipped. Single bin orders
cannot be supplied.
Bin Table
Ipr Limits (nA)
Bin #
Min.
Max.
2
150
200
3
195
245
4
240
293
5
288
355
6
350
430
7
425
520
8
515
650
4-26
HEDS-1200 Optical System
Figure 1A. HEDS-1200 Photocurrent Test Circuit.
Figure 1B. HEDS-1300 Photocurrent Test Circuit.
HEDS-1300 Optical System
REFERENCE
PLANE
REFLECTOR
6
CASE, SUBSTRATE
4
DS
DP
3
2
LED
Z
+ VF
IPT
nA-METER
IF = 35 mA
REFERENCE
PLANE
REFLECTOR
6
SUBSTRATE, CASE
4
DP
LED
Z
+ VF
IPT
nA-METER
IF = 35 mA
DS
2
3
DS
IPT = IPR + IPS
IPS : MEASURED IN THE DARK
IPR : WITH Z = 4.27 mm
nA-METER: KEITHLEY MODEL 480
(OR EQUIVALENT)
1
8
SILICON
BAFFLE
DETECTOR
0.406 mm SQUARE
OPTICAL
APERTURE
BAFFLE
SENSING
AREA
EMITTER
0.089 mm DIA. JUNCTION
EPOXY
SEAL
LENS
GLASS
DETECTOR
0.406 mm SQUARE
BAFFLE
GLASS
SENSING
AREA
EMITTER
0.185 mm DIA. JUNCTION
EPOXY
SEAL
LENS
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