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Part Number APTGU50TDU60P

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APTGU50TDU60P
A
P
T
G
U
50T
D
U
60P
­ R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
1 - 6




E5
G5
C 5
C 3
G3
E5/E6
E3
E6
G6
C 4
C 6
E4
G4
E1
E1/E2
E3/E4
C 1
G1
G2
E2
C 2


Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
c
= 25°C
73
I
C
Continuous
Collector
Current
T
c
= 80°C
50
I
CM
Pulsed Collector Current
T
c
= 25°C
200
A
V
GE
Gate ­ Emitter Voltage
±20
V
P
D
Maximum Power Dissipation
T
c
= 25°C
227 W
SSOA
Switching Safe Operating Area
T
j
= 150°C
190A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
E5/E6
G5
E5
E3/E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3



V
CES
= 600V
I
C
= 50A @ Tc = 80°C
Application
· AC Switches
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7
®
Punch Through (PT) IGBT
- Low conduction loss
- Ultra fast tail current shutoff
- Low gate charge
- Switching frequency capability in the 200kHz
range
- Soft recovery parallel diodes
- Low diode VF
· Kelvin emitter for easy drive
· Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
· High level of integration
Benefits
· Outstanding performance at high frequency
operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Very low (12mm) profile
· Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple Dual Common Source
PT IGBT Power Module
APTGU50TDU60P
A
P
T
G
U
50T
D
U
60P
­ R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 500µA
600
V
T
j
= 25°C
500
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125°C
2500
µA
T
j
= 25°C
2.2 2.7
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125°C
2.1
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 1mA
3
6
V
I
GES
Gate ­ Emitter Leakage Current
V
GE
= ±20V, V
CE
= 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
5700
C
oes
Output
Capacitance
465
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
30
pF
Q
g
Total gate Charge
165
Q
ge
Gate ­ Emitter Charge
40
Q
gc
Gate ­ Collector Charge
V
GE
= 15V
V
Bus
= 300V
I
C
= 50A
50
nC
T
d(on)
Turn-on
Delay
Time
19
T
r
Rise Time
36
T
d(off)
Turn-off Delay Time
83
T
f
Fall Time
60
ns
E
on1
Turn-on Switching Energy
465
E
on2
Turn-on Switching Energy
837
E
off
Turn-off Switching Energy
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 5
637
µJ
T
d(on)
Turn-on
Delay
Time
19
T
r
Rise Time
36
T
d(off)
Turn-off Delay Time
116
T
f
Fall Time
86
ns
E
on1
Turn-on Switching Energy
465
E
on2
Turn-on Switching Energy
1261
E
off
Turn-off Switching Energy
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 5
1058
µJ
E
on2
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
APTGU50TDU60P
A
P
T
G
U
50T
D
U
60P
­ R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
3 - 6
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25°C
250
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 125°C
750
µA
I
F(A V)
Maximum Average Forward Current
50% duty cycle
T
c
= 70°C
60
A
I
F
= 60A
2.2
2.7
I
F
= 120A
2.3
V
F
Diode Forward Voltage
I
F
= 60A
T
j
= 125°C
1.4
V
T
j
= 25°C
55
t
rr
Reverse Recovery Time
T
j
= 125°C
151
ns
T
j
= 25°C
121
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 400V
di/dt=200A/µs
T
j
= 125°C
999
nC
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.55
R
thJC
Junction
to
Case
Diode
0.9
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M6
3
5
N.m
Wt Package
Weight
250 g
Package outline
5 places (3:1)
APTGU50TDU60P
A
P
T
G
U
50T
D
U
60P
­ R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
10
20
30
40
50
60
70
0
0.5
1
1.5
2
2.5
3
Ic
, Co
lle
c
t
o
r

c
u
r
r
e
n
t
(
A
)
250µs Pulse Test
< 0.5% Duty cycle
V
CE
, Collector to Emitter Voltage (V)
Output Characteristics (V
GE
=10V)
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
10
20
30
40
50
60
70
0
0.5
1
1.5
2
2.5
3
Ic
, Co
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
250µs Pulse Test
< 0.5% Duty cycle
V
CE
, Collector to Emitter Voltage (V)
Transfer Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
2
4
6
8
10
V
GE
, Gate to Emitter Voltage (V)
Ic
, Co
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
250µs Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
= 120V
V
CE
= 300V
V
CE
= 480V
0
2
4
6
8
10
12
14
16
18
0
30
60
90
120
150
180
Gate Charge (nC)
I
C
= 50A
T
J
= 25°C
V
GE
,
G
a
t
e
to

E
m
i
tte
r
V
o
l
t
ag
e (V
)
Ic=100A
Ic=50A
Ic=25A
0
0.5
1
1.5
2
2.5
3
3.5
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
T
J
= 25°C
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
CE
, Co
lle
c
t
o
r

t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
)
Ic=100A
Ic=50A
Ic=25A
0
0.5
1
1.5
2
2.5
3
3.5
-50 -25
0
25
50
75
100 125 150
T
J
, Junction Temperature (°C)
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
V
CE
,
Co
lle
c
t
o
r
t
o

E
m
it
t
e
r
V
o
lt
a
g
e
(
V
)
On state Voltage vs Junction Temperature
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (°C)
Co
lle
c
t
o
r
t
o
E
m
it
t
e
r
Br
e
a
k
d
o
w
n
V
o
lt
a
g
e
(N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Junction Temp.
0
20
40
60
80
100
-50
-25
0
25
50
75
100 125 150
T
C
, Case Temperature (°C)
Ic
,
DC C
o
l
l
e
c
t
o
r
Cu
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
APTGU50TDU60P
A
P
T
G
U
50T
D
U
60P
­ R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
5 - 6
V
GE
= 15V
V
GE
= 10V
0
10
20
30
40
20
30
40
50
60
70
80
90
100
I
CE
, Collector to Emitter Current (A)
t
d
(
on)
,
Tu
r
n
-
O
n D
e
l
a
y
Ti
m
e
(
n
s
)
T
J
= 25°C, T
J
= 125°C
V
CE
= 400V
R
G
= 5, L=100µH
Turn-On Delay Time vs Collector Current
20
40
60
80
100
120
140
20
30
40
50
60
70
80
90
100
I
CE
, Collector to Emitter Current (A)
V
CE
= 400V
R
G
= 5
L=100µH
V
GE
=10V, T
J
=25°C
V
GE
=15V, T
J
=25°C
V
GE
=10V, T
J
=125°C
V
GE
=15V, T
J
=125°C
td
(o
ff)
,
T
u
r
n
-
O
ff
D
e
l
a
y
T
i
m
e
(n
s
)
Turn-Off Delay Time vs Collector Current
10
25
40
55
70
85
100
20
30
40
50
60
70
80
90
100
I
CE
, Collector to Emitter Current (A)
tr
,
R
i
s
e
T
i
m
e

(n
s
)
V
CE
= 400V
R
G
= 5
L=100µH
V
GE
=15V, T
J
=125°C
V
GE
=10V, T
J
=125°C
Current Rise Time vs Collector Current
T
J
= 25°C
T
J
= 125°C
20
40
60
80
100
120
20
30
40
50
60
70
80
90
100
I
CE
, Collector to Emitter Current (A)
t
f
, F
a
ll T
i
m
e
(
n
s
)
V
CE
= 400V, V
GE
= 15V, R
G
= 5, L=100µH
Current Fall Time vs Collector Current
T
J
=25°C,
V
GE
=15V
T
J
=25°C,
V
GE
=10V
T
J
=125°C,
V
GE
=10V
0
0.5
1
1.5
2
2.5
3
3.5
4
20
30
40
50
60
70
80
90
100
I
CE
, Collector to Emitter Current (A)
V
CE
= 400V
R
G
= 5, L=100µH
E
o
n
2
,
Tu
r
n
-
O
n E
n
e
r
g
y
Lo
s
s
(
m
J
)
Turn-On Energy Loss vs Collector Current
T
J
=125°C,
V
GE
=15V
T
J
= 25°C
T
J
= 125°C
0
0.5
1
1.5
2
2.5
3
3.5
20
30
40
50
60
70
80
90
100
I
CE
, Collector to Emitter Current (A)
E
o
f
f
,
Tu
r
n
-
o
f
f
E
n
e
r
gy
Los
s
(
m
J
)
V
CE
= 400V
V
GE
= 15V
R
G
= 5
L=100µH
Turn-Off Energy Loss vs Collector Current
Eon2, 100A
Eoff, 100A
Eon2, 50A
Eoff, 50A
Eon2, 25A
Eoff, 25A
0
1
2
3
4
5
6
0
10
20
30
40
50
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g
E
n
er
g
y
L
o
sse
s (
m
J)
V
CE
= 400V
V
GE
= 15V
T
J
= 125°C
Switching Energy Losses vs Gate Resistance
Eon2, 100A
Eoff, 100A
Eon2, 50A
Eoff, 50A
Eon2, 25A
Eoff, 25A
0
0.5
1
1.5
2
2.5
3
3.5
4
0
25
50
75
100
125
T
J
, Junction Temperature (°C)
S
w
i
t
c
h
i
n
g
E
n
er
g
y
L
o
sse
s (
m
J)
V
CE
= 400V
V
GE
= 15V
R
G
= 5
Switching Energy Losses vs Junction Temp.
APTGU50TDU60P
A
P
T
G
U
50T
D
U
60P
­ R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
6 - 6
Cies
Cres
Coes
10
100
1000
10000
0
10
20
30
40
50
C
,
C
a
p
a
c
i
ta
nc
e

(
pF)
V
CE
, Collector to Emitter Voltage (V)
Capacitance vs Collector to Emitter Voltage
0
40
80
120
160
200
0
200
400
600
800
I
C
,
C
o
l
l
e
c
tor
C
u
r
r
e
n
t (A
)
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
d
a
nc
e
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10
20
30
40
50
60
70
80
I
C
, Collector Current (A)
V
CE
= 400V
D = 50%
R
G
= 5
T
J
= 125°C
T
C
= 75°C
Operating Frequency vs Collector Current
Fma
x
,
O
p
e
r
a
t
i
n
g Fr
e
que
nc
y
(k
H
z
)






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APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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