APTGT75TDU120P
A
P
T
G
T
7
5
T
D
U
120P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
1 - 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
E5/E6
G5
E5
E3/E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3
E5
G5
C 5
C 3
G3
E5/E6
E3
E6
G6
C 4
C 6
E4
G4
E1
E1/E2
E3/E4
C 1
G1
G2
E2
C 2
Symbol Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25°C
100
I
C
Continuous
Collector
Current
T
C
= 80°C
75
I
CM
Pulsed Collector Current
T
C
= 25°C
175
A
V
GE
Gate Emitter Voltage
±20
V
P
D
Maximum Power Dissipation
T
C
= 25°C
350 W
RBSOA Reverse Bias Operating Area
T
j
= 125°C
150A@1150V
V
CES
= 1200V
I
C
= 75A @ Tc = 80°C
Application
· AC Switches
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
· Kelvin emitter for easy drive
· Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
· High level of integration
Benefits
· Stable temperature behavior
· Very rugged
· Solderable terminals for easy PCB mounting
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Easy paralleling due to positive TC of VCEsat
· Very low (12mm) profile
· Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple Dual Common Source
Trench IGBT
®
Power Module
APTGT75TDU120P
A
P
T
G
T
7
5
T
D
U
120P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 5mA
1200
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
5
mA
T
j
= 25°C
1.4
1.7
2.1
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 75A
T
j
= 125°C
2.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 3 mA
5.0
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
500
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
5340
C
oes
Output
Capacitance
280
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
240
pF
T
d(on)
Turn-on
Delay
Time
260
T
r
Rise Time
30
T
d(off)
Turn-off Delay Time
420
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7
70
ns
T
d(on)
Turn-on
Delay
Time
285
T
r
Rise Time
50
T
d(off)
Turn-off Delay Time
520
T
f
Fall Time
90
ns
E
on
Turn-on Switching Energy
7
E
off
Turn-off Switching Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7
8.1
mJ
E
on
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25°C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125°C
500
µA
T
j
= 25°C
1.6
2.1
V
F
Diode Forward Voltage
I
F
= 75A
V
GE
= 0V
T
j
= 125°C
1.6
V
T
j
= 25°C
3
E
r
Reverse Recovery Energy
I
F
= 75A
V
R
= 600V
di/dt =825A/µs T
j
= 125°C
6
mJ
T
j
= 25°C
7.6
Q
rr
Reverse Recovery Charge
I
F
= 75A
V
R
= 600V
di/dt =825A/µs T
j
= 125°C
13.7
µC
APTGT75TDU120P
A
P
T
G
T
7
5
T
D
U
120P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
3 - 5
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.35
R
thJC
Junction
to
Case
Diode
0.58
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M6
3
5
N.m
Wt Package
Weight
250 g
Package outline
5 places (3:1)
APTGT75TDU120P
A
P
T
G
T
7
5
T
D
U
120P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
25
50
75
100
125
150
0
1
2
3
4
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
25
50
75
100
125
150
0
1
2
3
4
V
CE
(V)
I
C
(A
)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
2.5
5
7.5
10
12.5
15
17.5
0
25
50
75
100
125
150
I
C
(A)
E (
m
J
)
V
CE
= 600V
V
GE
= 15V
R
G
= 4.7
T
J
= 125°C
Eon
Eoff
Er
0
2
4
6
8
10
12
14
16
0
4
8
12
16
20
24
28
32
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 600V
V
GE
=15V
I
C
= 75A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
0
25
50
75
100
125
150
175
0
400
800
1200
1600
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125°C
R
G
=4.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
l
I
m
p
e
d
a
n
ce (
°
C
/
W
)
IGBT
APTGT75TDU120P
A
P
T
G
T
7
5
T
D
U
120P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
C
(A
)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
0
20
40
60
80
100
120
I
C
(A)
F
m
a
x
,
O
p
e
r
a
t
i
n
g Fr
e
que
nc
y
(k
H
z
)
V
CE
=600V
D=50%
R
G
=4.7
T
J
=125°C
T
c
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
d
a
nc
e
(
°
C
/
W
)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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