APTGT50TDU170P
A
P
T
G
T
5
0
T
D
U
170P
R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1700
V
T
C
= 25°C
70
I
C
Continuous
Collector
Current
T
C
= 80°C
50
I
CM
Pulsed Collector Current
T
C
= 25°C
100
A
V
GE
Gate Emitter Voltage
±20
V
P
D
Maximum Power Dissipation
T
C
= 25°C
310 W
RBSOA Reverse Bias Save Operating Area
T
j
= 125°C
100A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
E5/E6
G5
E5
E3/E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3
E5
G5
C 5
C 3
G3
E5/E6
E3
E6
G6
C 4
C 6
E4
G4
E1
E1/E2
E3/E4
C 1
G1
G2
E2
C 2
V
CES
= 1700V
I
C
= 50A @ Tc = 80°C
Application
· AC Switches
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
· Kelvin emitter for easy drive
· Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
· High level of integration
· Kelvin emitter for easy drive
Benefits
· Stable temperature behavior
· Very rugged
· Solderable terminals for easy PCB mounting
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Easy paralleling due to positive TC of VCEsat
· Very low (12mm) profile
· Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple Dual Common Source
Trench IGBT
®
Power Module
APTGT50TDU170P
A
P
T
G
T
5
0
T
D
U
170P
R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 2.5mA
1700
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1700V
5
mA
T
j
= 25°C
2.0
2.4
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125°C
2.4
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 2.5 mA
5.0
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
4400
C
rss
Reverse Transfer Capacitance
V
GE
= 0V ;V
CE
= 25V
f = 1MHz
150
pF
T
d(on)
Turn-on
Delay
Time
200
T
r
Rise
Time
90
T
d(off)
Turn-off Delay Time
720
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 50A
R
G
= 22
90
ns
T
d(on)
Turn-on
Delay
Time
220
T
r
Rise
Time
90
T
d(off)
Turn-off Delay Time
820
T
f
Fall
Time
110
ns
E
on
Turn-on Switching Energy
29
E
off
Turn-off Switching Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 50A
R
G
= 22
Diode
22
mJ
E
on
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1700
V
T
j
= 25°C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1700V
T
j
= 125°C
500
µA
T
j
= 25°C
1.8
2.2
V
F
Diode Forward Voltage
I
F
= 50A
V
GE
= 0V
T
j
= 125°C
1.9
V
T
j
= 25°C
19
Q
rr
Reverse Recovery Charge
I
F
= 50A
V
R
= 900V
di/dt =990A/µs T
j
= 125°C
30
µC
APTGT50TDU170P
A
P
T
G
T
5
0
T
D
U
170P
R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
3 - 5
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT 0.4
R
thJC
Junction
to
Case
Diode
0.7
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M6
3
5
N.m
Wt Package
Weight
250 g
Package outline
5 places (3:1)
APTGT50TDU170P
A
P
T
G
T
5
0
T
D
U
170P
R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
25
50
75
100
125
0
0.5
1
1.5
2
2.5
3
3.5
4
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
25
50
75
100
0
1
2
3
4
5
V
CE
(V)
I
C
(A
)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
25
50
75
100
125
5
6
7
8
9
10
11
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
0
20
40
60
80
100
0
25
50
75
100
125
I
C
(A)
E (
m
J
)
V
CE
= 900V
V
GE
= 15V
R
G
= 22
T
J
= 125°C
Eon
Eoff
0
25
50
75
100
125
0
20
40
60
80
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 900V
V
GE
=15V
I
C
= 50A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
0
20
40
60
80
100
120
0
400
800
1200
1600
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125°C
R
G
=22
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
r
m
a
l
I
m
pe
d
a
nc
e
(
°
C
/
W
)
IGBT
APTGT50TDU170P
A
P
T
G
T
5
0
T
D
U
170P
R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
0
25
50
75
100
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
C
(A
)
hard
switching
ZCS
ZVS
0
10
20
30
40
50
0
20
40
60
80
I
C
(A)
Fm
a
x
,
O
p
e
r
a
t
ing Fr
e
que
n
c
y
(
k
H
z
)
V
CE
=900V
D=50%
R
G
=22
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
d
a
nc
e
(
°
C
/
W)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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