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Part Number APTGT50DDA120T3

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APTGT50DDA120T3
A
P
T
G
T
5
0
D
D
A
120T
3 ­ R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
1 - 5




Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25°C
75
I
C
Continuous
Collector
Current
T
C
= 80°C
50
I
CM
Pulsed Collector Current
T
C
= 25°C
100
A
V
GE
Gate ­ Emitter Voltage
±20
V
P
D
Maximum Power Dissipation
T
C
= 25°C
270 W
RBSOA Reverse Bias Save Operating Area
T
J
= 125°C
100A @ 1150V


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
23
22
13
Q1
CR1
30
8
Q2
7
14
CR2
16
R1
29
15
26
27
4
3
31
32
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
V
CES
= 1200V
I
C
= 50A @ Tc = 80°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
· Kelvin emitter for easy drive
· Low stray inductance
· High level of integration
· Internal thermistor for temperature monitoring
Benefits
· Outstanding performance at high frequency
operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
· Easy paralleling due to positive TC of VCEsat
· Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
Dual Boost chopper
Trench IGBT
®
Power Module
APTGT50DDA120T3
A
P
T
G
T
5
0
D
D
A
120T
3 ­ R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 2mA
1200
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
5 mA
T
j
= 25°C
1.4
1.7
2.1
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125°C
2.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 2mA
5.0
5.8
6.5
V
I
GES
Gate ­ Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA

Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
3600
C
rss
Reverse Transfer Capacitance
V
GE
= 0V,V
CE
= 25V
f = 1MHz
160
pF
T
d(on)
Turn-on
Delay
Time
90
T
r
Rise
Time
30
T
d(off)
Turn-off Delay Time
420
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
70
ns
T
d(on)
Turn-on
Delay
Time
90
T
r
Rise
Time
50
T
d(off)
Turn-off Delay Time
520
T
f
Fall
Time
90
ns
E
on
Turn-on Switching Energy
5
E
off
Turn-off Switching Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
5.5
mJ
E
on
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25°C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125°C
500
µA
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
I
F
= 60A
2
2.5
I
F
= 120A
2.3
V
F
Diode Forward Voltage
I
F
= 60A
T
j
= 125°C
1.8
V
T
j
= 25°C
400
t
rr
Reverse Recovery Time
T
j
= 125°C
470
ns
T
j
= 25°C
1200
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 800V
di/dt =200A/µs
T
j
= 125°C
4000
nC
APTGT50DDA120T3
A
P
T
G
T
5
0
D
D
A
120T
3 ­ R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
3 - 5
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25°C
68
k
B
25/85
T
25
= 298.16 K
4080
K


-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25

Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.45
R
thJC
Junction
to
Case
Diode
0.9
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
4.7 N.m
Wt Package
Weight
110 g
Package outline
17
12
28
1

T: Thermistor temperature
R
T
: Thermistor value at T
APTGT50DDA120T3
A
P
T
G
T
5
0
D
D
A
120T
3 ­ R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
20
40
60
80
100
0
1
2
3
4
V
CE
(V)
I
C
(A
)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
0
2
4
6
8
10
12
10
30
50
70
90
110
I
C
(A)
E (
m
J
)
V
CE
= 600V
V
GE
= 15V
R
G
= 18
T
J
= 125°C
Eon
Eoff
4
5
6
7
8
9
10
11
12
0
20
40
60
80
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 600V
V
GE
=15V
I
C
= 50A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
0
20
40
60
80
100
120
0
400
800
1200
1600
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125°C
R
G
=18
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
d
a
nc
e
(
°
C
/
W
)
IGBT
APTGT50DDA120T3
A
P
T
G
T
5
0
D
D
A
120T
3 ­ R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website ­ http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
140
160
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
C
(A
)
hard
switching
ZCS
ZVS
0
20
40
60
80
0
10
20
30
40
50
60
I
C
(A)
F
m
ax, O
p
er
at
in
g
F
r
eq
u
e
n
cy (
k
H
z
)
V
CE
=600V
D=50%
R
G
=18
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
n
c
e

(
°
C
/
W
)
Diode
















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