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Part Number APT30GU60JU2

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APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
1 - 9




ISOTOP
Ò

Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
I
C1
T
C
= 25°C
67
I
C2
Continuous Collector Current
T
C
= 110°C
30
I
CM
Pulsed Collector Current
T
C
= 25°C
120
A
V
GE
Gate ­ Emitter Voltage
±20
V
P
D
Maximum Power Dissipation
T
C
= 25°C
245
W
SSOA
Switching Safe Operating Area
T
J
=150°C 120A
@
600V
IF
AV
Maximum Average Forward Current
Duty cycle=0.5 T
C
= 80°C
30
IF
RMS
RMS Forward Current (Square wave, 50% duty)
39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
K
E
C
G


V
CES
= 600V
I
C
= 30A @ Tc = 110°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
· Brake switch
Features
· Power MOS 7
®
Punch Through (PT) IGBT
- Low conduction loss
- Ultra fast tail current shutoff
- Low gate charge
- Switching frequency capability in the 200kHz
range
- Soft recovery parallel diodes
- Low diode VF
· ISOTOP
®
Package (SOT-227)
· Very low stray inductance
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
ISOTOP
®
Boost chopper
PT IGBT
K
C
G
E
APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
2 - 9
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 0.5mA
600
V
T
j
= 25°C
500
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125°C
3000
µA
T
j
= 25°C
2.2
2.7
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 30A
T
j
= 125°C
2.1
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 1mA
3
4.5
6
V
I
GES
Gate ­ Emitter Leakage Current
V
GE
= ±20V, V
CE
= 0V
±100
nA

Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
3200
C
oes
Output
Capacitance
295
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
20
pF
Q
g
Total gate Charge
90
Q
ge
Gate ­ Emitter Charge
20
Q
gc
Gate ­ Collector Charge
V
GS
= 15V
V
Bus
= 300V
I
C
= 30A
30
nC
T
d(on)
Turn-on Delay Time
15
T
r
Rise
Time
20
T
d(off)
Turn-off Delay Time
55
T
f
Fall
Time
46
ns
E
on1
Turn-on Switching Energy
260
E
on2
Turn-on Switching Energy
u
335
E
off
Turn-off Switching Energy
v
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 30A
R
G
= 5
W
250
µJ
T
d(on)
Turn-on Delay Time
15
T
r
Rise
Time
18
T
d(off)
Turn-off Delay Time
84
T
f
Fall
Time
80
ns
E
on1
Turn-on Switching Energy
260
E
on2
Turn-on Switching Energy
u
508
E
off
Turn-off Switching Energy
v
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 30A
R
G
= 5
W
518
µJ
u E
on2
includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
3 - 9
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
1.6
1.8
I
F
= 60A
1.9
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125°C
1.4
V
V
R
= 600V
T
j
= 25°C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 600V
T
j
= 125°C
500
µA
C
T
Junction
Capacitance
V
R
=
200V
44 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =100A/µs
T
j
= 25°C
23
T
j
= 25°C
85
t
rr
Reverse Recovery Time
T
j
= 125°C
160
ns
T
j
= 25°C
4
I
RRM
Maximum Reverse Recovery Current
T
j
= 125°C
8
A
T
j
= 25°C
130
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/µs
T
j
= 125°C
700
nC
t
rr
Reverse Recovery Time
70
ns
Q
rr
Reverse Recovery Charge
1300
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt =1000A/µs
T
j
= 125°C
30 A


Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.51
R
thJC
Junction
to
Case
Diode
1.21
R
thJA
Junction to Ambient (IGBT & Diode)
20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage
Temperature
Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
°C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g
APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
4 - 9
Typical IGBT Performance Curve
APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
5 - 9
APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
6 - 9
APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
7 - 9
Typical Diode Performance Curve
APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
8 - 9
APT30GU60JU2
A
P
T
3
0G
U
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
9 - 9
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.

ISOTOP
®
is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Emitter
Gate
Collector
Cathode