G
C
E
PRELIMINAR
Y
MIN
TYP
MAX
600
-15
3
4
5
1.6
2.0
2.5
2.8
40
1000
±
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA, T
j
= -55
°
C)
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 400
µ
A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150
°
C)
Gate-Emitter Leakage Current (V
GE
=
±
20V, V
CE
= 0V)
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
µ
A
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
°
C
Continuous Collector Current @ T
C
= 110
°
C
Pulsed Collector Current
1
@ T
C
= 25
°
C
Pulsed Collector Current
1
@ T
C
= 110
°
C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT15GT60BR
600
600
15
±
20
31
15
60
30
24
135
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°
C
052-6209 Rev B
APT15GT60BR
600V
31A
The Thunderbolt IGBT
TM
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior
ruggedness and ultrafast switching speed.
· Low Forward Voltage Drop
· High Freq. Switching to 150KHz
· Low Tail Current
· Ultra Low Leakage Current
· Avalanche Rated
· RBSOA and SCSOA Rated
Thunderbolt IGBT
TM
TO-247
G
C
E
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
PRELIMINAR
Y
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
APT15GT60BR
UNIT
°
C/W
lb·in
MIN
TYP
MAX
0.93
40
10
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
JC
R
JA
Torque
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
V
GE
= 15V
V
CC
= 0.80V
CES
I
C
= I
C2
R
G
= 10
Inductive Switching (150
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +150
°
C
Inductive Switching (25
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25
°
C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
825
90
52
73
33
6
9
28
85
110
13
7
155
45
0.15
40
0.55
13
7
130
25
24
3
11
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
V
CC
= 50V,
R
GE
= 25
,
L = 200
µ
H, T
j
= 25
°
C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6209 Rev B
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