G
C
E
TO-220
G
C
E
MIN
TYP
MAX
1200
-15
4.5
5.5
6.5
2.5
3.0
3.1
3.7
0.4
2.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.4mA)
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 350µA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
W
)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 25°C
Pulsed Collector Current
1
@ T
C
= 110°C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT11GF120KR
1200
1200
15
±20
22
11
44
22
10
125
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
052-6213 Rev B 12-2000
APT11GF120KR
1200V
22A
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
· Low Forward Voltage Drop
· High Freq. Switching to 20KHz
· Low Tail Current
· Ultra Low Leakage Current
· Avalanche Rated
· RBSOA and SCSOA Rated
Fast IGBT
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
APT11GF120KR
UNIT
°C/W
lb·in
MIN
TYP
MAX
1.00
80
10
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
Q
JC
R
Q
JA
Torque
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
= 10
W
Inductive Switching (150°C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +150°C
Inductive Switching (25°C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
600
800
70
105
38
55
55
35
6
10
45
55
110
13
12
125
90
.45
1.00
1.45
13
12
110
90
1.0
4.7
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= 15A,
R
GE
= 25
W
,
L = 300µH, T
j
= 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6213 Rev B 12-2000
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