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Part Number ADG859

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1.3 CMOS, 1.8 V to 5.5 V Single SPDT
Switch/2:1 MUX in SOT-66 Package
ADG859
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2005 Analog Devices, Inc. All rights reserved.
FEATURES
1.8 V to 5.5 V single supply
Tiny 1.65 mm × 1.65 mm package
Low on resistance: 1.3 at 5 V supply
High current-carrying capability
300 mA continuous current
500 mA peak current at 5 V
Rail-to-rail operation
Typical power consumption: <0.01 W
TTL/CMOS-compatible inputs
APPLICATIONS
Cellular phones
PDAs
MP3 players
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement
FUNCTIONAL BLOCK DIAGRAM
05258-001
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
S2
S1
ADG859
D
IN
Figure 1.
GENERAL DESCRIPTION
The ADG859 is a monolithic, CMOS SPDT (single pole, double
throw) switch that operates with a supply range of 1.8 V to
5.5 V. It is designed to offer low on resistance of 2.3 maxi-
mum over the entire temperature range of -40°C to +125°C.
The ADG859 also has the capability of carrying large amounts
of current, typically 300 mA at 5 V operation. These features
make the ADG859 an ideal solution for applications that are
space-constrained, such as handsets, PDAs, and MP3 players.
Each switch conducts equally well in both directions when on.
The device exhibits break-before-make switching action,
thereby preventing momentary shorting when switching
channels.
The ADG859 is available in a tiny 6-lead SOT-66 package.
PRODUCT HIGHLIGHTS
1.
Low on resistance: 2.3 maximum over the full
temperature range of -40°C to +125°C.
2.
High current-carrying capability.
3.
Tiny 6-lead, 1.65 mm × 1.65 mm SOT-66 package.
ADG859
Rev. 0 | Page 2 of 16
TABLE OF CONTENTS
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
Typical Performance Characteristics ............................................. 7
Test Circuits..................................................................................... 10
Terminology .................................................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
6/05--Revision 0: Initial Version
ADG859
Rev. 0 | Page 3 of 16
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V, unless otherwise noted.
1
Table 1.
Parameter 25°C
-40°C to
+85°C
-40°C to
+125°C
Unit Test
Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On Resistance, R
ON
1.3
typ
V
DD
= 4.5 V, V
S
= 0 V to V
DD
, I
S
= -100 mA;
2.1
2.2
2.3
max
Figure 16
On Resistance Match Between Channels, R
ON
0.01
typ
V
DD
= 4.5 V, V
S
= 4.5V, I
S
= -100 mA;
0.093
0.163
0.163
max
Figure 16
On Resistance Flatness, R
FLAT (ON)
0.32
typ
V
DD
= 4.5 V, V
S
= 0 V to V
DD
, I
S
= -100 mA;
0.45
0.6
0.65
max
Figure 16
LEAKAGE CURRENTS
V
DD
= 5.5 V
Source Off Leakage, I
S
(Off)
±0.02
nA typ
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V; Figure 17
Channel On Leakage, I
D
, I
S
(On)
±0.02
nA typ
V
S
= V
D
= 1 V or 4.5 V; Figure 18
DIGITAL INPUTS
Input High Voltage, V
INH
2
V
min
Input Low Voltage, V
INL
0.8
V
max
Input Current, I
INL
or I
INH
0.005
A
typ
V
IN
= V
INL
or V
INH
±0.1
A
max
Digital Input Capacitance, C
IN
4
pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
8
ns
typ
R
L
= 50 , C
L
= 35 pF
10
11
12
ns
max
V
S
= 3 V; Figure 19
t
OFF
4.5
ns typ
R
L
= 50 , C
L
= 35 pF
6
6.5
7
ns
max
V
S
= 3 V; Figure 19
Break-Before-Make Time Delay, t
BBM
4
ns
typ
R
L
= 50 , C
L
= 35 pF
1
ns
min
V
S1
= V
S2
= 1.5 V; Figure 20
Charge Injection
±13
pC typ
V
S
= 0 V, R
S
= 0 , C
L
= 1 nF; Figure 21
Off Isolation
-78
dB typ
R
L
= 50 , C
L
= 5 pF, f = 100 kHz;
Figure 22
Channel-to-Channel Crosstalk
-78
dB typ
R
L
= 50 , C
L
= 5 pF, f = 100 kHz;
Figure 23
-3 dB Bandwidth
125
MHz
typ
R
L
= 50 , C
L
= 5 pF; Figure 24
Insertion Loss
-0.11
dB
typ
R
L
= 50 , C
L
= 5 pF; Figure 24
Total Harmonic Distortion (THD + N)
0.062
%
R
L
= 32 , f = 20 Hz to 20 kHz,
V
S
= 3 V p-p; Figure 14
C
S
(Off)
18
pF typ
f = 1 MHz
C
D
, C
S
(On)
45
pF typ
f = 1 MHz
POWER REQUIREMENTS
V
DD
= 5.5 V
I
DD
0.001
1
A typ
A max
Digital inputs = 0 V or 5.5 V
1
Temperature range is
-40°C to +125°C.
2
Guaranteed by design; not subject to production test.
ADG859
Rev. 0 | Page 4 of 16
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
1
Table 2.
Parameter

25°C
-40°C to
+85°C
-40°C to
+125°C
Unit Test
Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On Resistance, R
ON
3
typ
V
DD
= 2.7 V, V
S
= 0 V to V
DD
, I
S
= -100 mA;
4.3
4.5
4.7
max
Figure 16
On Resistance Match Between Channels, R
ON
0.03
typ
V
DD
= 2.7 V, V
S
= 1.2 V, I
S
= -100 mA;
R
ON
0.11
0.15
0.15
max
Figure 16
LEAKAGE CURRENTS
V
DD
= 3.6 V
Source Off Leakage, I
S
(Off)
±0.02
nA typ
V
S
= 3 V/1 V, V
D
= 1 V/3 V; Figure 17
Channel On Leakage, I
D
, I
S
(On)
±0.05
nA typ
V
S
= V
D
= 1 V or 3 V; Figure 18
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V
min
Input Low Voltage, V
INL
0.8
V
max
V
DD
= 3 V to 3.6 V
0.7
V
max
V
DD
= 2.7 V
Input Current, I
INL
or I
IN
0.005
A
typ
V
IN
= V
INL
or V
INH
±0.1
±0.1
A
max
Digital Input Capacitance, C
IN
4
pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
11
ns
typ
R
L
= 50 , C
L
= 35 pF
15
16
17
ns
max
V
S
= 1.5 V; Figure 19
t
OFF
6
ns typ
R
L
= 50 , C
L
= 35 pF
9.5
10
11
ns
max
V
S
= 1.5 V; Figure 19
Break-Before-Make Time Delay, t
BBM
5
ns
typ
R
L
= 50 , C
L
= 35 pF
1
ns
min
V
S1
= V
S2
= 1.5 V; Figure 20
Charge Injection
±7
pC typ
V
S
= 0 V, R
S
= 0 , C
L
= 1 nF; Figure 21
Off Isolation
-78
dB typ
R
L
= 50 , C
L
= 5 pF, f = 100 kHz;
Figure 22
Channel-to-Channel Crosstalk
-78
dB typ
S1 to S2; R
L
= 50 , C
L
= 5 pF,
f = 100 kHz; Figure 23
-3 dB Bandwidth
125
MHz typ
R
L
= 50 , C
L
= 5 pF; Figure 24
Insertion Loss
-0.11
dB
typ
R
L
= 50 , C
L
= 5 pF; Figure 24
Total Harmonic Distortion (THD + N)
0.1
%
R
L
= 32 , f = 20 Hz to 20 kHz,
V
S
= 2 V p-p; Figure 14
C
S
(Off)
18
pF typ
f = 1 MHz
C
D
, C
S
(On)
46
pF typ
f = 1 MHz
POWER REQUIREMENTS
V
DD
= 3.6 V
I
DD
0.001
1
A typ
A max
Digital inputs = 0 V or 3.6 V
1
Temperature range is
-40°C to +125°C.
2
Guaranteed by design; not subject to production test.
ADG859
Rev. 0 | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
V
DD
to GND
-0.3 V to +7.0 V
Analog Inputs
1
-0.3 V to V
DD
+ 0.3 V or
30 mA, whichever occurs first
Digital Inputs
1
-0.3 V to V
DD
+ 0.3 V or
30 mA, whichever occurs first
Peak Current, S or D
5 V Operation
500 mA
3 V Operation
460 mA
Continuous Current, S or D
5 V Operation
300 mA
3 V Operation
275 mA
Operating Temperature Range
Automotive
-40°C to +85°C
Storage Temperature Range
-65°C to +150°C
Junction Temperature
150°C
SOT-66 Package (4-Layer Board)
JA
Thermal Impedance
191°C/W
Lead-Free Reflow
Peak Temperature
Time at Peak Temperature

260(+0/-5)°C
10 sec to 40 sec
1
Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Table 4. Truth Table
Logic (IN)
Switch 2 (S2)
Switch 1 (S1)
0 Off
On
1 On
Off
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
ADG859
Rev. 0 | Page 6 of 16
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
ADG859
TOP VIEW
(Not to Scale)
IN 1
V
DD
2
GND 3
S2
D
S1
6
5
4
05258-002
Figure 2. 6-Lead SOT-66 Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
Mnemonic
Description
1
IN
Logic Control Input.
2 V
DD
Most Positive Power Supply Potential.
3
GND
Ground (0 V) Reference.
4
S1
Source Terminal. Can be an input or an output.
5
D
Drain Terminal. Can be an input or an output.
6
S2
Source Terminal. Can be an input or an output.
ADG859
Rev. 0 | Page 7 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R
ON
(
)
0
1
2
3
4
5
V
S
/V
D
(V)
05258-012
V
DD
= 4.5V
V
DD
= 5V
V
DD
= 5.5V
T
A
= 25
°
C
I
DS
= 100mA
Figure 3. On Resistance vs. V
S
(V
D
); V
DD
= 5 V ± 10%
0
0.5
1.0
1.5
2.0
2.5
3.0
R
ON
(
)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
S
/V
D
(V)
05258-024
V
DD
= 2.7V
V
DD
= 3V
V
DD
= 3.3V
V
DD
= 3.6V
T
A
= 25
°
C
I
DS
= 100mA
Figure 4. On Resistance vs. V
S
(V
D
); V
DD
= 2.7 V to 3.6 V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ON RE
S
I
S
TANCE
(
)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
SOURCE VOLTAGE (V)
05258-014
+125
°
C
+85
°
C
+25
°
C
­40
°
C
V
DD
= 5V
I
DS
= 100mA
Figure 5. On Resistance vs. Source Voltage for Different Temperatures,
V
DD
= 5 V
0
0.5
1.0
1.5
2.0
2.5
3.0
ON RE
S
I
S
TANCE
(
)
1.0
1.5
0
0.5
2.0
2.5
3.0
SOURCE VOLTAGE (V)
05258-013
­40
°
C
+25
°
C
+85
°
C
+125
°
C
V
DD
= 3V
I
DS
= 100mA
Figure 6. On Resistance vs. Source Voltage for Different Temperatures,
V
DD
= 3 V
­1
0
1
2
3
4
LE
AKAGE
(nA)
40
20
­20
0
­40
60
80
100
120
TEMPERATURE (
°
C)
05258-016
5
I
S
(OFF)
I
D
, I
S
(ON)
V
DD
= 5V
Figure 7. Leakage vs. Temperature, V
DD
= 5 V
­0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
LE
AKAGE
(nA)
40
20
­20
0
­40
60
80
100
120
TEMPERATURE (
°
C)
05258-015
I
D
, I
S
(ON)
I
S
(OFF)
V
DD
= 3V
Figure 8. Leakage vs. Temperature, V
DD
= 3 V
ADG859
Rev. 0 | Page 8 of 16
0
CHARGE
INJ
E
CTION (pC)
30
0
5.0
V
D
(V)
05258-017
25
20
15
10
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T
A
= 25
°
C
V
DD
= 3V
V
DD
= 5V
Figure 9. Charge Injection vs. Source Voltage
0
2
4
6
8
10
12
14
TIME (ns)
0
20
­40
­20
40
60
80
TEMPERATURE (
°
C)
05258-018
V
DD
= 3.3V
t
ON
V
DD
= 5V
V
DD
= 3.3V
t
OFF
V
DD
= 5V
Figure 10. t
ON
/t
OFF
Times vs. Temperature
­12
­10
­8
­6
­4
­2
0
ON
R
ESPON
SE (
d
B
)
100
1k
10k
100k
1M
10M
100M
1G
FREQUENCY (Hz)
05258-019
T
A
= 25
°
C
V
DD
= 3V/5V
Figure 11. Bandwidth
­120
­100
­80
­60
­40
­20
0
ATTE
NUATION (dB)
100
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
05258-020
T
A
= 25
°
C
V
DD
= 3V/5V
Figure 12. Off Isolation vs. Frequency
100M
­120
­100
­80
­60
­40
­20
0
ATTE
NUATION (dB)
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
05258-021
T
A
= 25
°
C
V
DD
= 3V/5V
Figure 13. Crosstalk vs. Frequency
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
THD + N (%)
FREQUENCY (Hz)
05258-022
T
A
= 25
°
C
0
5k
10k
15k
20k
V
DD
= 3V, V
S
= 2V p-p
V
DD
= 5V, V
S
= 3V p-p
Figure 14. Total Harmonic Distortion + Noise
ADG859
Rev. 0 | Page 9 of 16
­120
­100
­80
­60
­40
­20
0
P
S
RR (dB)
100
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
05258-023
T
A
= 25
°
C
V
DD
= 3V/5V
NO SUPPLY DECOUPLING
Figure 15. PSRR
ADG859
Rev. 0 | Page 10 of 16
TEST CIRCUITS
05258-003
S
D
V
S
V
I
DS
Figure 16. On Resistance
S
D
V
S
V
D
I
S
(OFF)
I
D
(OFF)
A
A
05258-004
Figure 17. Off Leakage
S
D
V
D
I
D
(ON)
NC
A
05258-005
Figure 18. On Leakage
05258-006
V
OUT
t
ON
t
OFF
V
IN
50%
50%
V
IN
50%
50%
90%
90%
D
GND
RL
50
C
L
35pF
V
DD
V
OUT
V
S
V
IN
V
DD
0.1
F
IN
S2
S1
Figure 19. Switching Times, t
ON
, t
OFF
05258-007
V
OUT
V
IN
t
BBM
t
BBM
80%
D
IN
GND
RL
50
C
L
35pF
V
DD
V
OUT
V
S
V
DD
0.1
F
S2
S1
V
IN
Figure 20. Break-Before-Make Time Delay, t
BBM
05258-008
V
IN
(NORMALLY
CLOSED SWITCH)
V
IN
(NORMALLY
OPEN SWITCH)
V
OUT
ON
Q
INJ
= C
L
×
V
OUT
OFF
V
OUT
IN
GND
V
DD
V
DD
0.1
F
V
S
C
L
1nF
V
OUT
NC
S2
S1
D
V
IN
Figure 21. Charge Injection
ADG859
Rev. 0 | Page 11 of 16
05258-009
V
DD
V
S
V
DD
V
IN
NC
IN
NETWORK
ANALYZER
S1
S2
GND
OFF ISOLATION = 20 LOG
D
50
50
V
OUT
R
L
50
0.1
F
V
OUT
V
S
Figure 22. Off Isolation
05258-010
V
OUT
V
DD
IN
V
DD
GND
V
S
R
L
50
R
50
0.1
F
50
S1
D
S2
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
V
OUT
V
S
NETWORK
ANALYZER
Figure 23. Channel-to-Channel Crosstalk
05258-011
V
DD
V
S
V
DD
V
IN
NC
IN
NETWORK
ANALYZER
S1
S2
GND
D
50
V
OUT
R
L
50
0.1
F
INSERTION LOSS = 20 LOG
V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
Figure 24. Bandwidth
ADG859
Rev. 0 | Page 12 of 16
TERMINOLOGY
V
DD
Most positive power supply potential.
I
DD
Positive supply current.
GND
Ground (0 V) reference.
S
Source terminal. Can be an input or an output.
D
Drain terminal. Can be an input or an output.
IN
Logic control input.
V
D
(V
S
)
Analog voltage on the D and S terminals.
R
ON
Ohmic resistance between the D and S terminals.
R
FLAT (ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured.
R
ON
On resistance mismatch between any two channels.
I
S
(Off)
Source leakage current with the switch off.
I
D
(Off)
Drain leakage current with the switch off.
I
D
, I
S
(On)
Channel leakage current with the switch on.
V
INL
Maximum input voltage for Logic 0.
V
INH
Minimum input voltage for Logic 1.
I
INL
(I
INH
)
Input current of the digital input.
C
S
(Off)
Off switch source capacitance. Measured with reference to
ground.
C
D
(Off)
Off switch drain capacitance. Measured with reference to
ground.
C
D
, C
S
(On)
On switch capacitance. Measured with reference to ground.
C
IN
Digital input capacitance.
t
ON
Delay time between the 50% and 90% points of the digital input
and switch on condition.
t
OFF
Delay time between the 50% and 90% points of the digital input
and switch off condition.
t
BBM
On or off time measured between the 80% points of both
switches when switching from one to another.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during on/off switching.
Off Isolation
A measure of unwanted signal coupling through an off switch.
Crosstalk
A measure of unwanted signal that is coupled through from one
channel to another as a result of parasitic capacitance.
-3 dB Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
Insertion Loss
The loss due to the on resistance of the switch.
THD + N
The ratio of harmonic amplitudes plus noise of a signal to the
fundamental.
ADG859
Rev. 0 | Page 13 of 16
OUTLINE DIMENSIONS
SEATING
PLANE
0.60
0.57
0.53
12° MAX
TOP VIEW
0.34 MAX
0.27 NOM
0.18
0.17
0.13
BOTTOM
VIEW
1.70
1.66
1.50
1.30
1.20
1.10
1.70
1.65
1.50
1
3
5
6
2
4
0.10 NOM
0.05 MIN
0.20 MIN
0.50
BSC
0.25 MAX
0.17 MIN
0.30
0.23
0.10
0.26
0.19
0.11
PIN 1
Figure 25. 6-Lead Small Outline Transistor Package [SOT-66]
(RY-6-1)
Dimensions shown in millimeters
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option
Branding
1
ADG859YRYZ-REEL
2
-40°C to +125°C
6-Lead Small Outline Transistor Package (SOT-66)
RY-6-1
02
ADG859YRYZ-REEL7
2
-40°C to +125°C
6-Lead Small Outline Transistor Package (SOT-66)
RY-6-1
02
ADG859BRYZ-REEL
2
-40°C to +85°C
6-Lead Small Outline Transistor Package (SOT-66)
RY-6-1
04
ADG859BRYZ-REEL7
2
-40°C to +85°C
6-Lead Small Outline Transistor Package (SOT-66)
RY-6-1
04
1
Branding on this package is limited to two characters due to space constraints.
2
Z = Pb-free part.
ADG859
Rev. 0 | Page 14 of 16
NOTES
ADG859
Rev. 0 | Page 15 of 16
NOTES
ADG859
Rev. 0 | Page 16 of 16
NOTES
© 2005 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D05258­0­6/05(0)