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Part Number ADG1204

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2 pF Off Capacitance, 1 pC Charge Injection,
±15 V/12 V 4:1
iCMOSTM Multiplexer
Preliminary Technical Data
ADG1204
Rev. PrD
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
FEATURES
2 pF off capacitance
1 pC charge injection
33 V supply range
120 on resistance
Fully specified at +12 V, ±15 V
No V
L
supply required
3 V logic-compatible inputs
Rail-to-rail operation
14-lead TSSOP and 12-lead LFCSP
Typical power consumption: <0.03 µW
APPLICATIONS
Automatic test equipment
Data aquisition systems
Battery-powered systems
Sample-and-hold systems
Audio signal routing
Communication systems
FUNCTIONAL BLOCK DIAGRAM
ADG1204
S2
S1
D
S4
S3
EN
A1
A0
1 OF 4
DECODER
04779-0-001
Figure 1.
GENERAL DESCRIPTION
The ADG1204 is a CMOS analog multiplexer, comprising four
single channels designed on an iCMOS process. iCMOS
(industrial-CMOS) is a modular manufacturing process that
combines high voltage CMOS (complementary metal-oxide
semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 30-V operation in a footprint that no other genera-
tion of high voltage parts has been able to achieve. Unlike
analog ICs using conventional CMOS processes, iCMOS
components can tolerate high supply voltages, while providing
increased performance, dramatically lower power consumption,
and reduced package size.
The ultralow capacitance and charge injection of these switches
make them ideal solutions for data acquisition and sample-and-
hold applications, where low glitch and fast settling are required.
Fast switching speed coupled with high signal bandwidth make
the parts suitable for video signal switching. iCMOS construc-
tion ensures ultralow power dissipation, making the parts
ideally suited for portable and battery powered instruments.
The ADG1204 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1, and
EN. Logic 0 on the EN pin disables the device. Each switch
conducts equally well in both directions when on, and has an
input signal range that extends to the supplies. In the off condi-
tion, signal levels up to the supplies are blocked. All switches
exhibit break-before-make switching action. Inherent in the
design is low charge injection for minimum transients when
switching the digital inputs.
PRODUCT HIGHLIGHTS
1.
2 pF off capacitance (±15 V supply).
2.
1 pC charge injection.
3.
3 V logic-compatible digital inputs:
V
IH
= 2.0 V, V
IL
= 0.8 V
4.
No V
L
logic power supply required.
5.
Ultralow power dissipation: <0.03 µW.
6.
14-lead TSSOP and 12-lead 3 mm × 3 mm LFCSP package.
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ADG1204
Preliminary Technical Data
Rev. PrD | Page 2 of 16
TABLE OF CONTENTS
Specifications..................................................................................... 3
Dual Supply ................................................................................... 3
Single Supply ................................................................................. 5
Absolute Maximum Ratings............................................................ 7
Truth Table .................................................................................... 7
ESD Caution.................................................................................. 7
Pin Configurations and Function Descriptions ............................8
Terminology .......................................................................................9
Typical Performance Characteristics ........................................... 10
Test Circuits..................................................................................... 13
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 15
REVISION HISTORY
11/04--Revision PrD: Preliminary Version
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Preliminary Technical Data
ADG1204
Rev. PrD | Page 3 of 16
SPECIFICATIONS
DUAL SUPPLY
V
DD
= 15 V ± 10%, V
SS
= -15 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
25°C
85°C
Y Version
1
Unit Test
Conditions/Comments
ANALOG SWITCH
Analog Signal Range
V
DD
to V
SS
V
On Resistance (R
ON
)
120
160
180
typ
V
S
= ±10 V, I
S
= -10 mA; Figure 21
max
On Resistance Match between
Channels (R
ON
)
5
typ
V
S
= ±10 V, I
S
= -10 mA
max
On Resistance Flatness (R
FLAT(ON)
)
25
typ
V
S
= -5 V, 0 V, +5 V; I
S
= -10 mA
50
max
LEAKAGE CURRENTS
V
DD
= +10 V, V
SS
= -10 V
Source Off Leakage, I
S
(Off)
±0.01
nA typ
V
S
= 0 V/10 V, V
D
= 10 V/0 V; Figure 22
±0.5
±1
±5
nA max
Drain Off Leakage, I
D
(Off)
±0.01
nA typ
V
S
= 0 V/10 V, V
D
= 10 V/0 V; Figure 22
±0.5
±1
±5
nA max
Channel On Leakage, I
D
, I
S
(On)
±0.04
nA typ
V
S
= V
D
= 0 V or 10 V; Figure 23
±1
±2
±5
nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.8
V max
Input Current, I
INL
or I
NH
0.005
µA typ
V
IN
= V
INL
or V
INH
±0.5
µA max
Digital Input Capacitance, C
IN
5
pF typ
DYNAMIC CHARACTERISTICS
2
Transition Time, t
TRANS
40
ns typ
R
L
= 50 , C
L
= 35 pF
ns max
V
S
= ±10 V; Figure 24
t
ON
(EN)
40
ns typ
R
L
= 50 , C
L
= 35 pF
90
ns max
V
S
= ±10 V; Figure 24
t
OFF
(EN)
20
ns typ
R
L
= 50 , C
L
= 35 pF
40
ns max
V
S
= ±10 V; Figure 24
Break-before-Make Time Delay, t
D
15
ns typ
R
L
= 50 , C
L
= 35 pF
1
ns min
V
S1
= V
S2
= 10 V; Figure 25
Charge Injection
1
pC typ
V
S
= 0 V, R
S
= 0 , C
L
= 1 nF; Figure 26
Off Isolation
75
dB typ
R
L
= 50 , C
L
= 5 pF, f = 1 MHz; Figure 27
Channel-to-Channel Crosstalk
85
dB typ
R
L
= 50 , C
L
= 5 pF, f = 1 MHz; Figure 28
Total Harmonic Distortion + Noise
0.002
% typ
R
L
= 600 , 5 V rms, f = 20 Hz to 20 kHz
-3 dB Bandwidth
700
MHz typ
R
L
= 50 , C
L
= 5 pF; Figure 29
C
S
(Off)
2
pF typ
C
D
(Off)
7
pF typ
C
D
, C
S
(On)
4
pF typ
POWER REQUIREMENTS
V
DD
= +16.5 V, V
SS
= -16.5 V
I
DD
0.001
µA typ
Digital Inputs = 0 V or V
DD
5.0
µA max
I
DD
150
µA typ
Digital Inputs = 5 V
300
µA max
I
SS
0.001
µA typ
Digital Inputs = 0 V or V
DD
5.0
µA max
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ADG1204
Preliminary Technical Data
Rev. PrD | Page 4 of 16
Parameter
25°C
85°C
Y Version
1
Unit Test
Conditions/Comments
I
GND
0.001
µA typ
Digital Inputs = 0 V or V
DD
5.0
µA max
I
GND
150
µA typ
Digital Inputs = 5 V
300
µA max
1
Y Version temperature range is -40°C to +125°C.
2
Guaranteed by design, not subject to production test.
V
DD
= +5 V ± 10%, V
SS
= -5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
25°C 85°C Y
Version
1
Unit Test
Conditions/Comments
ANALOG SWITCH
Analog Signal Range
V
SS
to V
DD
V
On Resistance (R
ON
)
220
typ
V
S
= ±3.3 V, I
S
= -10 mA; Figure 21
max
On Resistance Match between
Channels (R
ON
)
10
typ
max
V
S
= ±3.3 V, I
S
= -10 mA
On Resistance Flatness (R
FLAT(ON)
)
30
typ
V
S
= ±3.3 V, I
S
= -10 mA
max
LEAKAGE CURRENTS
V
DD
= 5.5 V, V
SS
= -5.5 V
Source Off Leakage, I
S
(Off)
±0.01
nA typ
V
D
= ±4.5 V, V
S
= ±4.5 V; Figure 22
±0.5
±1
±5
nA max
Drain Off Leakage, I
D
(Off)
±0.01
nA typ
V
D
= ±4.5 V, V
S
= ±4.5 V; Figure 22
±0.5
±1
±5
nA max
Channel On Leakage, I
D
, I
S
(On)
±0.04
nA typ
V
D
= V
S
= ±4.5 V; Figure 23
±1
±2
±5
nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.8
V max
Input Current, I
INL
or I
INH
0.005
µA typ
V
IN
= V
INL
or V
INH
±0.5
µA max
Digital Input Capacitance, C
IN
5
pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
160
ns
typ
R
L
= 300 , C
L
= 35 pF
ns max
V
S
= 3 V; Figure 24
t
OFF
60
ns
typ
R
L
= 300 , C
L
= 35 pF
ns max
V
S
= 3 V; Figure 24
Break-before-Make Time Delay, t
D
50
ns
typ
R
L
= 300 , C
L
= 35 pF
1
ns
min
V
S1
= V
S2
= 3 V; Figure 25
Charge Injection
20
pC typ
V
S
= 0 V, R
S
= 0 , C
L
= 1 nF; Figure 26
pC max
Off Isolation
56
dB typ
R
L
= 50 , C
L
= 5 pF, f = 1 MHz; Figure 27
Channel-to-Channel Crosstalk
60
dB typ
R
L
= 50 , C
L
= 5 pF, f = 1 MHz; Figure 28
-3 dB Bandwidth
20
MHz typ
R
L
= 50 , C
L
= 5 pF; Figure 29
C
S
(Off)
15
pF typ
f = 1 MHz
C
D
(Off)
pF typ
f = 1 MHz
C
D
, C
S
(On)
100
pF typ
f = 1 MHz
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Preliminary Technical Data
ADG1204
Rev. PrD | Page 5 of 16
Parameter
25°C 85°C Y
Version
1
Unit Test
Conditions/Comments
POWER REQUIREMENTS
V
DD
= +5.5 V, V
SS
= -5.5 V
I
DD
0.001
µA typ
Digital Inputs = 0 V or 5.5 V
5.0
µA
max
I
SS
0.001
µA typ
Digital Inputs = 0 V or 5.5 V
5.0
µA
max
1
Y Version temperature range is -40°C to +125°C.
2
Guaranteed by design, not subject to production test.
SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter 25°C
85°C
Y
Version
1
Unit Test
Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On Resistance (R
ON
)
220
typ
V
S
= 10 V, I
S
= -10 mA; Figure 21
max
On Resistance Match between
1
typ
V
S
= 10 V, I
S
= -10 mA
Channels (R
ON
)
max
On Resistance Flatness (R
FLAT(ON)
)
12
typ
V
S
= 3 V, 6 V, 9 V; I
S
= -10 mA
LEAKAGE CURRENTS
V
DD
= 12 V
Source Off Leakage, I
S
(Off)
±0.01
nA typ
V
S
= 1 V/10 V, V
D
= 10 V/1 V; Figure 22
±0.5
±1
±5
nA max
Drain Off Leakage, I
D
(Off)
±0.01
nA typ
V
S
= 1 V/10 V, V
D
= 10 V/1 V; Figure 22
±0.5
±1
±5
nA max
Channel On Leakage, I
D
, I
S
(On)
±0.04
nA typ
V
S
= V
D
= 1 V or 10 V; Figure 23
±1
±2
±5
nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.8
V max
Input Current, I
INL
or I
INH
0.001
µA typ
V
IN
= V
INL
or V
INH
±0.5
µA max
Digital Input Capacitance, C
IN
5
pF typ
DYNAMIC CHARACTERISTICS
2
Transition Time, t
TRANS
40
ns typ
R
L
= 50 , C
L
= 35 pF
ns max
V
S
= ±10 V; Figure 24
t
ON
(EN)
50
ns typ
R
L
= 50 , C
L
= 35 pF
ns max
V
S
= 8 V; Figure 24
t
OFF
(EN)
15
ns typ
R
L
= 50 , C
L
= 35 pF
ns max
V
S
= 8 V; Figure 24
Break-before-Make Time Delay, t
D
15
ns typ
R
L
= 50 , C
L
= 35 pF
1
ns min
V
S1
= V
S2
= 8 V; Figure 25
Charge Injection
5
pC typ
V
S
= 0 V, R
S
= 0 , C
L
= 1 nF; Figure 26
Off Isolation
75
dB typ
R
L
= 50 , C
L
= 5 pF, f = 1 MHz; Figure 27
Channel-to-Channel Crosstalk
85
dB typ
R
L
= 50 , C
L
= 5 pF, f = 1 MHz; Figure 28
-3 dB Bandwidth
700
MHz typ
R
L
= 50 , C
L
= 5 pF; Figure 29
C
S
(Off)
2
pF typ
C
D
(Off)
2
pF typ
C
D
, C
S
(On)
4
pF typ
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ADG1204
Preliminary Technical Data
Rev. PrD | Page 6 of 16
Parameter 25°C
85°C
Y
Version
1
Unit Test
Conditions/Comments
POWER REQUIREMENTS
V
DD
= 13.2 V
I
DD
0.001
µA typ
Digital inputs = 0 V or V
DD
5.0
µA max
I
DD
150
µA typ
Digital inputs = 5 V
300
µA max
1
Y Version temperature range is -40°C to +125°C.
2
Guaranteed by design, not subject to production test.
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Preliminary Technical Data
ADG1204
Rev. PrD | Page 7 of 16
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 4.
Parameter Rating
V
DD
to V
SS
38 V
V
DD
to GND
-0.3 V to +25 V
V
SS
to GND
+0.3 V to -25 V
Analog Inputs
1
V
SS
- 0.3 V to V
DD
+ 0.3 V
Digital Inputs
GND - 0.3 V to V
DD
+ 0.3 V or
30 mA, whichever occurs first
Peak Current, S or D
100 mA (pulsed at 1 ms, 10%
duty cycle max)
Continuous Current, S or D
30 mA
Operating Temperature Range
Industrial (B Version)
-40°C to +85°C
Automotive (Y Version)
-40°C to +125°C
Storage Temperature Range
-65°C to +150°C
Junction Temperature
150°C
14-Lead TSSOP,
JA
Thermal
Impedance
150.4°C/W
12-Lead LFCSP,
JA
Thermal
Impedance
30.4°C/W
Lead Temperature, Soldering
Vapor Phase (60 s)
215°C
Infrared (15 s)
220°C
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
TRUTH TABLE
Table 5.
EN A1 A0 S1 S2 S3 S4
0
X
X
Off
Off
Off
Off
1
0
0
On
Off
Off
Off
1
0
1
Off
On
Off
Off
1
1
0
Off
Off
On
Off
1
1
1
Off
Off
Off
On
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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ADG1204
Preliminary Technical Data
Rev. PrD | Page 8 of 16
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
TOP VIEW
1
2
3
4
5
6
7
ADG1204
NC = NO CONNECT
EN
V
SS
S1
NC
D
S2
A0
14
13
12
11
10
9
8
GND
V
DD
S3
NC
NC
S4
A1
04779-0-002
Figure 2. TSSOP Pin Configuration
PIN 1
INDICATOR
NC = NO CONNECT
1
V
SS
2
S1
3
S2
9 GND
8 V
DD
7 S3
4
D
5
N
C
6
S
4
1
2
E
N
1
1
A
0
1
0
A
1
TOP VIEW
(Not to Scale)
ADG1204
04779-0-003
Figure 3. LFCSP Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
TSSOP LFCSP Mnemonic Function
1
11
A0
Logic Control Input.
2 12
EN
Active High Digital Input. When low, the device is disabled and all switches are off.
When high, Ax logic inputs determine on switches.
3 1 V
SS
Most Negative Power Supply Potential.
4
2
S1
Source Terminal. Can be an input or an output.
5
3
S2
Source Terminal. Can be an input or an output.
6
4
D
Drain Terminal. Can be an input or an output.
7­9 5 NC
No
Connection.
10
6
S4
Source Terminal. Can be an input or an output.
11
7
S3
Source Terminal. Can be an input or an output.
12 8 V
DD
Most Positive Power Supply Potential.
13
9
GND
Ground (0 V) Reference.
14
10
A1
Logic Control Input.
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Preliminary Technical Data
ADG1204
Rev. PrD | Page 9 of 16
TERMINOLOGY
I
DD
The positive supply current.
I
SS
The negative supply current.
V
D
(V
S
)
The analog voltage on Terminals D and S.
R
ON
The ohmic resistance between D and S.
R
FLAT(ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance, as measured over the specified
analog signal range.
I
S
(Off)
The source leakage current with the switch off.
I
D
(Off)
The drain leakage current with the switch off.
I
D
, I
S
(On)
The channel leakage current with the switch on.
V
INL
The maximum input voltage for Logic 0.
V
INH
The minimum input voltage for Logic 1.
I
INL
(I
INH
)
The input current of the digital input.
C
S
(Off)
The off switch source capacitance, which is measured with
reference to ground.
C
D
(Off)
The off switch drain capacitance, which is measured with
reference to ground.
C
D
, C
S
(On)
The on switch capacitance, which is measured with reference to
ground.
C
IN
The digital input capacitance.
t
ON
(EN)
The delay between applying the digital control input and the
output switching on. See Figure 24, Test Circuit 4.
t
OFF
(EN)
The delay between applying the digital control input and the
output switching off.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
Off Isolation
A measure of unwanted signal coupling through an off switch.
Crosstalk
A measure of unwanted signal that is coupled through from one
channel to another as a result of parasitic capacitance.
Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
Insertion Loss
The loss due to the on resistance of the switch.
THD + N
The ratio of the harmonic amplitude plus noise of the signal to
the fundamental.
t
TRANS
The delay time between the 50% and 90% points of the digital
input and switch on condition when switching from one
address state to another.
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ADG1204
Preliminary Technical Data
Rev. PrD | Page 10 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 4. On Resistance as a Function of V
D
(V
S
) for Single Supply
Figure 5. On Resistance as a Function of V
D
(V
S
) for Dual Supply
Figure 6. On Resistance as a Function of V
D
(V
S
) for Different Temperatures,
Single Supply
Figure 7. On Resistance as a Function of V
D
(V
S
) for Different Temperatures,
Single Supply
Figure 8. On Resistance as a Function of V
D
(V
S
) for Different Temperatures,
Dual Supply
Figure 9. Leakage Currents as a Function of V
D
(V
S
)
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Preliminary Technical Data
ADG1204
Rev. PrD | Page 11 of 16
Figure 10. Leakage Currents as a Function of V
D
(V
S
)
Figure 11. Leakage Currents as a Function of V
D
(V
S
)
Figure 12. Leakage Currents as a Function of Temperature
Figure 13. Leakage Currents as a Function of Temperature
Figure 14. Supply Currents vs. Input Switching Frequency
Figure 15. Charge Injection vs. Source Voltage
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ADG1204
Preliminary Technical Data
Rev. PrD | Page 12 of 16
Figure 16. t
ON
/t
OFF
Times vs. Temperature
Figure 17. Off Isolation vs. Frequency
Figure 18. Crosstalk vs. Frequency
Figure 19. On Response vs. Frequency
Figure 20. THD + N vs. Frequency
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Preliminary Technical Data
ADG1204
Rev. PrD | Page 13 of 16
TEST CIRCUITS
I
DS
S
D
V
S
04779-0-020
V
S
D
V
S
A
A
V
D
I
S
(OFF)
I
D
(OFF)
04779-0-021
S
D
A
V
D
I
D
(ON)
NC
NC = No Connect
04779-0-022
Figure 21. Test Circuit 1--On Resistance
Figure 22. Test Circuit 2--Off Leakage
Figure 23. Test Circuit 3--On Leakage
V
S
S1
D
GND
C
L
35pF
R
L
50
V
OUT
50%
50%
90%
90%
ADDRESS
DRIVE (V
IN
)
)
V
OUT
A0
A1
S4
S3
S2
V
S1
V
S4
EN
+2.4V
0V
3V
t
TRANSITION
t
TRANSITION
V
DD
0.1
µ
F
V
SS
V
DD
V
SS
0.1
µ
F
04779-0-023
Figure 24. Test Circuit 4--Address to Output Switching Times
ADDRESS
DRIVE (V
IN
)
V
OUT
V
S
S1
D
GND
C
L
35pF
R
L
50
50
V
OUT
A0
A1
S4
S3
S2
V
S1
EN
+2.4V
V
DD
0.1
µ
F
V
SS
V
DD
V
SS
0.1
µ
F
04779-0-024
t
BBM
80%
80%
0V
3V
Figure 25. Test Circuit 5--Break-before-Make Time
Delay.
ENABLE
DRIVE (V
IN
)
S1
D
GND
C
L
35pF
R
L
50
V
OUT
A0
A1
S4
S3
S2
V
S
EN
V
DD
0.1
µ
F
V
SS
V
DD
V
SS
0.1
µ
F
V
S
50
04779-0-025
t
OFF
(EN)
t
ON
(EN)
50%
50%
0.9V0
0.9V0
OUTPUT
0V
3V
V0
0V
Figure 26. Test Circuit 6--Enable to Output Switching Delay
background image
ADG1204
Preliminary Technical Data
Rev. PrD | Page 14 of 16
S
D
V
S
GND
R
S
SW OFF
Q
INJ
= C
L
×
V
OUT
SW ON
SW OFF
SW ON
SW OFF
SW OFF
A2
A1
EN
V
DD
V
SS
V
DD
DECODER
V
SS
V
OUT
V
OUT
V
IN
V
IN
V
OUT
C
L
1nF
04779-0-026
Figure 27. Test Circuit 7-- Charge Injection
V
OUT
50
NETWORK
ANALYZER
R
L
50
S
D
50
OFF ISOLATION = 20 LOG
V
OUT
V
S
V
S
V
DD
V
SS
0.1
µ
F
V
DD
0.1
µ
F
V
SS
GND
04779-0-027
Figure 28. Test Circuit 8--Off Isolation
V
OUT
50
NETWORK
ANALYZER
R
L
50
S
D
INSERTION LOSS = 20 LOG
V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
V
S
V
DD
V
SS
0.1
µ
F
V
DD
0.1
µ
F
V
SS
GND
04779-0-028
Figure 29. Test Circuit 9--Bandwidth
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
V
OUT
GND
S1
D
S2
V
OUT
NETWORK
ANALYZER
R
L
50
R
50
V
S
V
S
V
DD
V
SS
0.1
µ
F
V
DD
0.1
µ
F
V
SS
04779-0-029
Figure 30. Test Circuit 10--Channel-to-Channel Crosstalk
V
OUT
R
S
AUDIO PRECISION
R
L
600
IN
V
IN
S
D
V
S
V p-p
V
DD
V
SS
0.1
µ
F
V
DD
0.1
µ
F
V
SS
GND
04779-0-030
Figure 31. Test Circuit 11--THD + Noise
background image
Preliminary Technical Data
ADG1204
Rev. PrD | Page 15 of 16
OUTLINE DIMENSIONS
4.50
4.40
4.30
14
8
7
1
6.40
BSC
PIN 1
5.10
5.00
4.90
0.65
BSC
SEATING
PLANE
0.15
0.05
0.30
0.19
1.20
MAX
1.05
1.00
0.80
0.20
0.09

0.75
0.60
0.45
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-153AB-1
Figure 32. 14-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-14)
Dimension shown in millimeters
*COMPLIANT TO JEDEC STANDARDS MO-220-VEED-1
EXCEPT FOR EXPOSED PAD DIMENSION.
1
0.50
BSC
0.60 MAX
PIN 1
INDICATOR
0.75
0.55
0.35
0.25 MIN
0.45
TOP
VIEW
12 MAX
0.80 MAX
0.65 TYP
PIN 1
INDICATOR
1.00
0.85
0.80
0.30
0.23
0.18
0.05 MAX
0.02 NOM
0.20 REF
*1.45
1.30 SQ
1.15
12
4
10
6
7
9
3
2.75
BSC SQ
3.00
BSC SQ
2
5
8
11
COPLANARITY
0.08
EXPOSED PAD
(BOTTOM VIEW)
SEATING
PLANE
Figure 33. 12-Lead Lead Frame Chip Scale Package [VQ_LFCSP]
3 mm × 3 mm Body, Very Thin Quad
(CP-12-1)
Dimensions shown in inches and (millimeters)
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option
ADG1204YRU
-40°C to +125°C
Thin Shrink Small Outline Package (TSSOP)
RU-14
ADG1204YCP
-40°C to +125°C
Lead Frame Chip Scale Package (LFCSP)
CP-12-1
background image
ADG1204
Preliminary Technical Data
Rev. PrD | Page 16 of 16
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR04779­0­11/04(PrD)

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